JPS53149771A - Mis-type semiconductor device and its manufacture - Google Patents

Mis-type semiconductor device and its manufacture

Info

Publication number
JPS53149771A
JPS53149771A JP6502577A JP6502577A JPS53149771A JP S53149771 A JPS53149771 A JP S53149771A JP 6502577 A JP6502577 A JP 6502577A JP 6502577 A JP6502577 A JP 6502577A JP S53149771 A JPS53149771 A JP S53149771A
Authority
JP
Japan
Prior art keywords
mis
manufacture
semiconductor device
type semiconductor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6502577A
Other languages
Japanese (ja)
Other versions
JPS6346586B2 (en
Inventor
Kazutoshi Nagano
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6502577A priority Critical patent/JPS53149771A/en
Publication of JPS53149771A publication Critical patent/JPS53149771A/en
Publication of JPS6346586B2 publication Critical patent/JPS6346586B2/ja
Granted legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To fabricate a flat-surface MIS device with small gate-electrode wiring resistance, by burying a gate insulation film and gate electrode in the substrate and by forming a channel and gate electrode through self-matching.
COPYRIGHT: (C)1978,JPO&Japio
JP6502577A 1977-06-01 1977-06-01 Mis-type semiconductor device and its manufacture Granted JPS53149771A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6502577A JPS53149771A (en) 1977-06-01 1977-06-01 Mis-type semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6502577A JPS53149771A (en) 1977-06-01 1977-06-01 Mis-type semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPS53149771A true JPS53149771A (en) 1978-12-27
JPS6346586B2 JPS6346586B2 (en) 1988-09-16

Family

ID=13275012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6502577A Granted JPS53149771A (en) 1977-06-01 1977-06-01 Mis-type semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS53149771A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61284964A (en) * 1985-06-10 1986-12-15 Nippon Telegr & Teleph Corp <Ntt> Mis type field effect transistor and manufacture thereof
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
US4914058A (en) * 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
WO1990011616A1 (en) * 1989-03-21 1990-10-04 Grumman Aerospace Corporation Trench gate complimentary metal oxide semiconductor transistor
WO1990011615A1 (en) * 1989-03-21 1990-10-04 Grumman Aerospace Corporation Trench gate metal oxide semiconductor transistor
US5108938A (en) * 1989-03-21 1992-04-28 Grumman Aerospace Corporation Method of making a trench gate complimentary metal oxide semiconductor transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5093779A (en) * 1973-12-21 1975-07-26
JPS51118383A (en) * 1975-04-10 1976-10-18 Matsushita Electric Ind Co Ltd Manufacturing process for mos type semiconductor unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5093779A (en) * 1973-12-21 1975-07-26
JPS51118383A (en) * 1975-04-10 1976-10-18 Matsushita Electric Ind Co Ltd Manufacturing process for mos type semiconductor unit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61284964A (en) * 1985-06-10 1986-12-15 Nippon Telegr & Teleph Corp <Ntt> Mis type field effect transistor and manufacture thereof
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
US4914058A (en) * 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
WO1990011616A1 (en) * 1989-03-21 1990-10-04 Grumman Aerospace Corporation Trench gate complimentary metal oxide semiconductor transistor
WO1990011615A1 (en) * 1989-03-21 1990-10-04 Grumman Aerospace Corporation Trench gate metal oxide semiconductor transistor
US5108938A (en) * 1989-03-21 1992-04-28 Grumman Aerospace Corporation Method of making a trench gate complimentary metal oxide semiconductor transistor

Also Published As

Publication number Publication date
JPS6346586B2 (en) 1988-09-16

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