JPS52122481A - Mos type semiconductor device and its production - Google Patents
Mos type semiconductor device and its productionInfo
- Publication number
- JPS52122481A JPS52122481A JP3952976A JP3952976A JPS52122481A JP S52122481 A JPS52122481 A JP S52122481A JP 3952976 A JP3952976 A JP 3952976A JP 3952976 A JP3952976 A JP 3952976A JP S52122481 A JPS52122481 A JP S52122481A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- type semiconductor
- mos type
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To match channel and gate electrode positions nearly perfectly by forming recesses in a substrate, then ion-implanting to their side faces thereby forming channels and controlling the implantation.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3952976A JPS6032989B2 (en) | 1976-04-07 | 1976-04-07 | Manufacturing method of MOS type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3952976A JPS6032989B2 (en) | 1976-04-07 | 1976-04-07 | Manufacturing method of MOS type semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52122481A true JPS52122481A (en) | 1977-10-14 |
JPS6032989B2 JPS6032989B2 (en) | 1985-07-31 |
Family
ID=12555560
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3952976A Expired JPS6032989B2 (en) | 1976-04-07 | 1976-04-07 | Manufacturing method of MOS type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6032989B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5491187A (en) * | 1977-12-21 | 1979-07-19 | Tektronix Inc | Semiconductor and method of fabricating same |
JPS55133574A (en) * | 1979-04-05 | 1980-10-17 | Nec Corp | Insulated gate field effect transistor |
JPS583287A (en) * | 1981-06-30 | 1983-01-10 | Fujitsu Ltd | Vertical cylindrical mos field effect transistor |
JPS5858771A (en) * | 1981-09-14 | 1983-04-07 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Insulated gate field effect transistor and method of producing same |
-
1976
- 1976-04-07 JP JP3952976A patent/JPS6032989B2/en not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5491187A (en) * | 1977-12-21 | 1979-07-19 | Tektronix Inc | Semiconductor and method of fabricating same |
JPS6318346B2 (en) * | 1977-12-21 | 1988-04-18 | Tektronix Inc | |
JPS55133574A (en) * | 1979-04-05 | 1980-10-17 | Nec Corp | Insulated gate field effect transistor |
JPS583287A (en) * | 1981-06-30 | 1983-01-10 | Fujitsu Ltd | Vertical cylindrical mos field effect transistor |
JPS5858771A (en) * | 1981-09-14 | 1983-04-07 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Insulated gate field effect transistor and method of producing same |
JPH058586B2 (en) * | 1981-09-14 | 1993-02-02 | Fuiritsupusu Furuuiranpenfuaburiken Nv |
Also Published As
Publication number | Publication date |
---|---|
JPS6032989B2 (en) | 1985-07-31 |
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