JPS5372470A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5372470A JPS5372470A JP14713776A JP14713776A JPS5372470A JP S5372470 A JPS5372470 A JP S5372470A JP 14713776 A JP14713776 A JP 14713776A JP 14713776 A JP14713776 A JP 14713776A JP S5372470 A JPS5372470 A JP S5372470A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- type
- layer
- superimposingly
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To manufacture the device integrated with high density, by making the P type channel layer and N type source layer superimposingly for a part to the N type drain layer provided in a given depth to the substrate and by forming the gate electrode through the V-groove provision.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51147137A JPS6036110B2 (en) | 1976-12-09 | 1976-12-09 | semiconductor equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51147137A JPS6036110B2 (en) | 1976-12-09 | 1976-12-09 | semiconductor equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5372470A true JPS5372470A (en) | 1978-06-27 |
JPS6036110B2 JPS6036110B2 (en) | 1985-08-19 |
Family
ID=15423397
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51147137A Expired JPS6036110B2 (en) | 1976-12-09 | 1976-12-09 | semiconductor equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6036110B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58115858A (en) * | 1981-12-28 | 1983-07-09 | Fujitsu Ltd | Mis type semiconductor device |
JPS60229364A (en) * | 1984-04-09 | 1985-11-14 | エヌ・ベー・フイリツプス・フルーイランペンフアブリケン | Semiconductor device |
JPH01194364A (en) * | 1988-01-28 | 1989-08-04 | Nec Corp | Longitudinal type high dielectric strength semiconductor device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4914391A (en) * | 1972-05-22 | 1974-02-07 | ||
JPS4928790A (en) * | 1972-07-18 | 1974-03-14 | ||
JPS5132075A (en) * | 1974-09-11 | 1976-03-18 | Tetsutaro Mori | Senkohodenkan no tentokairo |
-
1976
- 1976-12-09 JP JP51147137A patent/JPS6036110B2/en not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4914391A (en) * | 1972-05-22 | 1974-02-07 | ||
JPS4928790A (en) * | 1972-07-18 | 1974-03-14 | ||
JPS5132075A (en) * | 1974-09-11 | 1976-03-18 | Tetsutaro Mori | Senkohodenkan no tentokairo |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58115858A (en) * | 1981-12-28 | 1983-07-09 | Fujitsu Ltd | Mis type semiconductor device |
JPS60229364A (en) * | 1984-04-09 | 1985-11-14 | エヌ・ベー・フイリツプス・フルーイランペンフアブリケン | Semiconductor device |
JPH01194364A (en) * | 1988-01-28 | 1989-08-04 | Nec Corp | Longitudinal type high dielectric strength semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6036110B2 (en) | 1985-08-19 |
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