JPS52127752A - Pduction of semiconductor unit - Google Patents
Pduction of semiconductor unitInfo
- Publication number
- JPS52127752A JPS52127752A JP4530176A JP4530176A JPS52127752A JP S52127752 A JPS52127752 A JP S52127752A JP 4530176 A JP4530176 A JP 4530176A JP 4530176 A JP4530176 A JP 4530176A JP S52127752 A JPS52127752 A JP S52127752A
- Authority
- JP
- Japan
- Prior art keywords
- pduction
- semiconductor unit
- diffusion
- inpurity
- convering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To form the uniform high density diffusion layer by making the applied film thickness of the inpurity diffusion source formed by convering the frame for selective diffusion of impurity with fixed inclined wall uniform approximately.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4530176A JPS52127752A (en) | 1976-04-19 | 1976-04-19 | Pduction of semiconductor unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4530176A JPS52127752A (en) | 1976-04-19 | 1976-04-19 | Pduction of semiconductor unit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52127752A true JPS52127752A (en) | 1977-10-26 |
Family
ID=12715483
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4530176A Pending JPS52127752A (en) | 1976-04-19 | 1976-04-19 | Pduction of semiconductor unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52127752A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS583226A (en) * | 1981-06-30 | 1983-01-10 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH02303120A (en) * | 1989-05-18 | 1990-12-17 | Rohm Co Ltd | Method of forming impurity diffused layer |
CN102157549A (en) * | 2011-01-26 | 2011-08-17 | 上海宏力半导体制造有限公司 | PN junction and manufacturing method thereof |
-
1976
- 1976-04-19 JP JP4530176A patent/JPS52127752A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS583226A (en) * | 1981-06-30 | 1983-01-10 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH02303120A (en) * | 1989-05-18 | 1990-12-17 | Rohm Co Ltd | Method of forming impurity diffused layer |
CN102157549A (en) * | 2011-01-26 | 2011-08-17 | 上海宏力半导体制造有限公司 | PN junction and manufacturing method thereof |
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