JPS52127752A - Pduction of semiconductor unit - Google Patents

Pduction of semiconductor unit

Info

Publication number
JPS52127752A
JPS52127752A JP4530176A JP4530176A JPS52127752A JP S52127752 A JPS52127752 A JP S52127752A JP 4530176 A JP4530176 A JP 4530176A JP 4530176 A JP4530176 A JP 4530176A JP S52127752 A JPS52127752 A JP S52127752A
Authority
JP
Japan
Prior art keywords
pduction
semiconductor unit
diffusion
inpurity
convering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4530176A
Other languages
Japanese (ja)
Inventor
Yoichi Eguchi
Yoshimi Tsuchiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4530176A priority Critical patent/JPS52127752A/en
Publication of JPS52127752A publication Critical patent/JPS52127752A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To form the uniform high density diffusion layer by making the applied film thickness of the inpurity diffusion source formed by convering the frame for selective diffusion of impurity with fixed inclined wall uniform approximately.
COPYRIGHT: (C)1977,JPO&Japio
JP4530176A 1976-04-19 1976-04-19 Pduction of semiconductor unit Pending JPS52127752A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4530176A JPS52127752A (en) 1976-04-19 1976-04-19 Pduction of semiconductor unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4530176A JPS52127752A (en) 1976-04-19 1976-04-19 Pduction of semiconductor unit

Publications (1)

Publication Number Publication Date
JPS52127752A true JPS52127752A (en) 1977-10-26

Family

ID=12715483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4530176A Pending JPS52127752A (en) 1976-04-19 1976-04-19 Pduction of semiconductor unit

Country Status (1)

Country Link
JP (1) JPS52127752A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583226A (en) * 1981-06-30 1983-01-10 Fujitsu Ltd Manufacture of semiconductor device
JPH02303120A (en) * 1989-05-18 1990-12-17 Rohm Co Ltd Method of forming impurity diffused layer
CN102157549A (en) * 2011-01-26 2011-08-17 上海宏力半导体制造有限公司 PN junction and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583226A (en) * 1981-06-30 1983-01-10 Fujitsu Ltd Manufacture of semiconductor device
JPH02303120A (en) * 1989-05-18 1990-12-17 Rohm Co Ltd Method of forming impurity diffused layer
CN102157549A (en) * 2011-01-26 2011-08-17 上海宏力半导体制造有限公司 PN junction and manufacturing method thereof

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