JPS52117584A - Mos type semiconductor device - Google Patents

Mos type semiconductor device

Info

Publication number
JPS52117584A
JPS52117584A JP3504576A JP3504576A JPS52117584A JP S52117584 A JPS52117584 A JP S52117584A JP 3504576 A JP3504576 A JP 3504576A JP 3504576 A JP3504576 A JP 3504576A JP S52117584 A JPS52117584 A JP S52117584A
Authority
JP
Japan
Prior art keywords
type semiconductor
mos type
semiconductor device
domain
sos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3504576A
Other languages
Japanese (ja)
Other versions
JPS605068B2 (en
Inventor
Satoru Kawazu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3504576A priority Critical patent/JPS605068B2/en
Publication of JPS52117584A publication Critical patent/JPS52117584A/en
Publication of JPS605068B2 publication Critical patent/JPS605068B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To enable SOS,MOS type semiconductor having faster operational speed and less variation in Vth, by making higher then impurity density at the drain domain draw out section, and by shortening only to the source domain PN junction with the alloy layer consisting of the electrode metal and semiconductor base.
COPYRIGHT: (C)1977,JPO&Japio
JP3504576A 1976-03-29 1976-03-29 MOS type semiconductor device Expired JPS605068B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3504576A JPS605068B2 (en) 1976-03-29 1976-03-29 MOS type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3504576A JPS605068B2 (en) 1976-03-29 1976-03-29 MOS type semiconductor device

Publications (2)

Publication Number Publication Date
JPS52117584A true JPS52117584A (en) 1977-10-03
JPS605068B2 JPS605068B2 (en) 1985-02-08

Family

ID=12431054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3504576A Expired JPS605068B2 (en) 1976-03-29 1976-03-29 MOS type semiconductor device

Country Status (1)

Country Link
JP (1) JPS605068B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS543480A (en) * 1977-06-09 1979-01-11 Fujitsu Ltd Manufacture of semiconductor device
US5264721A (en) * 1989-04-29 1993-11-23 Fujitsu Limited Insulated-gate FET on an SOI-structure

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60160577A (en) * 1984-01-30 1985-08-22 Shimadzu Corp Fuel cell power generation system
US10975912B1 (en) 2020-01-21 2021-04-13 United Technologies Corporation Roller bearing cage retention apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS543480A (en) * 1977-06-09 1979-01-11 Fujitsu Ltd Manufacture of semiconductor device
US5264721A (en) * 1989-04-29 1993-11-23 Fujitsu Limited Insulated-gate FET on an SOI-structure

Also Published As

Publication number Publication date
JPS605068B2 (en) 1985-02-08

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