JPS5421180A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5421180A
JPS5421180A JP8623077A JP8623077A JPS5421180A JP S5421180 A JPS5421180 A JP S5421180A JP 8623077 A JP8623077 A JP 8623077A JP 8623077 A JP8623077 A JP 8623077A JP S5421180 A JPS5421180 A JP S5421180A
Authority
JP
Japan
Prior art keywords
forming
semiconductor device
mosfet
gate
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8623077A
Other languages
Japanese (ja)
Inventor
Teruo Sakurai
Koichi Nishiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8623077A priority Critical patent/JPS5421180A/en
Publication of JPS5421180A publication Critical patent/JPS5421180A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To manufacture a MOSFET of high speed operation, by forming a tapered trapezoid semiconductor layer narrowing toward upward on an insulation substrate and by forming a source and drain layer in contact with the substrate along the side surface taking the top surface as the gate.
COPYRIGHT: (C)1979,JPO&Japio
JP8623077A 1977-07-19 1977-07-19 Semiconductor device Pending JPS5421180A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8623077A JPS5421180A (en) 1977-07-19 1977-07-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8623077A JPS5421180A (en) 1977-07-19 1977-07-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5421180A true JPS5421180A (en) 1979-02-17

Family

ID=13880981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8623077A Pending JPS5421180A (en) 1977-07-19 1977-07-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5421180A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5791555A (en) * 1980-10-02 1982-06-07 Westinghouse Electric Corp Semiconductor element and method of producing same
US5397718A (en) * 1992-02-21 1995-03-14 Matsushita Electric Industrial Co., Ltd. Method of manufacturing thin film transistor
US9526314B2 (en) 2013-06-27 2016-12-27 Japro Inc. Sliding makeup implement

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5791555A (en) * 1980-10-02 1982-06-07 Westinghouse Electric Corp Semiconductor element and method of producing same
US5397718A (en) * 1992-02-21 1995-03-14 Matsushita Electric Industrial Co., Ltd. Method of manufacturing thin film transistor
US9526314B2 (en) 2013-06-27 2016-12-27 Japro Inc. Sliding makeup implement

Similar Documents

Publication Publication Date Title
JPS5421180A (en) Semiconductor device
JPS53149771A (en) Mis-type semiconductor device and its manufacture
JPS5261960A (en) Production of semiconductor device
JPS5437584A (en) Field effect semiconductor device of insulation gate type
JPS533075A (en) Production of mos structure field effect semiconductor device
JPS5366179A (en) Semiconductor device
JPS53125778A (en) Semiconductor device
JPS5516480A (en) Insulating gate electrostatic effect transistor and semiconductor integrated circuit device
JPS5372470A (en) Semiconductor device
JPS534469A (en) Semiconductor device
JPS53135581A (en) Manufacture for mos semiconductor device
JPS51148377A (en) Manufacturing method of mis type semiconductor device
JPS53130983A (en) Semiconductor device
JPS5423478A (en) Semiconductor device of field effect type
JPS5394775A (en) Manufacture of semiconductor device
JPS53144686A (en) Production of semiconductor device
JPS539488A (en) Production of semiconductor device
JPS5370769A (en) Production of semiconductor device
JPS5412566A (en) Production of semiconductor device
JPS52100878A (en) Field effect transistor
JPS5321582A (en) Mos type semiconductor device
JPS52147983A (en) Insulation gate type semiconductor device
JPS53139474A (en) Manufacture of semiconductor device
JPS5384575A (en) Semicocductor device
JPS53105984A (en) Semiconductor device