JPS5394775A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5394775A
JPS5394775A JP870077A JP870077A JPS5394775A JP S5394775 A JPS5394775 A JP S5394775A JP 870077 A JP870077 A JP 870077A JP 870077 A JP870077 A JP 870077A JP S5394775 A JPS5394775 A JP S5394775A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
conductive
region
semiconductor
gate
formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP870077A
Inventor
Yuji Oda
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: The region containing two conductive layers of a forward-conductive semiconductor substrate surface and reverse-conductive region formed on the forward conductive substrate is provided with a convave part, where a semiconductor region is selectively formed to make the sectional shape of the gate region excellent, thereby improving the dielectric sterength between the gate and source.
COPYRIGHT: (C)1978,JPO&Japio
JP870077A 1977-01-31 1977-01-31 Manufacture of semiconductor device Pending JPS5394775A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP870077A JPS5394775A (en) 1977-01-31 1977-01-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP870077A JPS5394775A (en) 1977-01-31 1977-01-31 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5394775A true true JPS5394775A (en) 1978-08-19

Family

ID=11700197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP870077A Pending JPS5394775A (en) 1977-01-31 1977-01-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5394775A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61135115A (en) * 1984-12-04 1986-06-23 Us Gov Energy Method of selectively patterning for growth of epitaxial film on semiconductor substrate
US6406982B2 (en) 2000-06-05 2002-06-18 Denso Corporation Method of improving epitaxially-filled trench by smoothing trench prior to filling
US6495294B1 (en) 1999-10-28 2002-12-17 Denso Corporation Method for manufacturing semiconductor substrate having an epitaxial film in the trench

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61135115A (en) * 1984-12-04 1986-06-23 Us Gov Energy Method of selectively patterning for growth of epitaxial film on semiconductor substrate
US6495294B1 (en) 1999-10-28 2002-12-17 Denso Corporation Method for manufacturing semiconductor substrate having an epitaxial film in the trench
US6406982B2 (en) 2000-06-05 2002-06-18 Denso Corporation Method of improving epitaxially-filled trench by smoothing trench prior to filling
US7063751B2 (en) 2000-06-05 2006-06-20 Denso Corporation Semiconductor substrate formed by epitaxially filling a trench in a semiconductor substrate with a semiconductor material after smoothing the surface and rounding the corners

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