JPS52115663A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52115663A
JPS52115663A JP3193276A JP3193276A JPS52115663A JP S52115663 A JPS52115663 A JP S52115663A JP 3193276 A JP3193276 A JP 3193276A JP 3193276 A JP3193276 A JP 3193276A JP S52115663 A JPS52115663 A JP S52115663A
Authority
JP
Japan
Prior art keywords
semiconductor device
channel regions
providing
insulating film
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3193276A
Other languages
Japanese (ja)
Other versions
JPS6123669B2 (en
Inventor
Fujio Masuoka
Kenji Natori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3193276A priority Critical patent/JPS52115663A/en
Publication of JPS52115663A publication Critical patent/JPS52115663A/en
Priority to US05/955,879 priority patent/US4243997A/en
Publication of JPS6123669B2 publication Critical patent/JPS6123669B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation

Abstract

PURPOSE: Higher density and higher integration are achieved by providing recesses of a given depth in channel regions, making gate electrodes through an insulating film and providing an intrinsic semiconductor layer adjoining to the channel regions.
COPYRIGHT: (C)1977,JPO&Japio
JP3193276A 1976-03-25 1976-03-25 Semiconductor device Granted JPS52115663A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3193276A JPS52115663A (en) 1976-03-25 1976-03-25 Semiconductor device
US05/955,879 US4243997A (en) 1976-03-25 1978-10-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3193276A JPS52115663A (en) 1976-03-25 1976-03-25 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS52115663A true JPS52115663A (en) 1977-09-28
JPS6123669B2 JPS6123669B2 (en) 1986-06-06

Family

ID=12344733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3193276A Granted JPS52115663A (en) 1976-03-25 1976-03-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS52115663A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5491069A (en) * 1977-12-28 1979-07-19 Nec Corp Mos field effect transistor
JPS54111444U (en) * 1978-01-24 1979-08-06
JPS5499573A (en) * 1978-01-24 1979-08-06 Pioneer Electronic Corp Field effect transistor
JPS54113858U (en) * 1978-01-24 1979-08-10
JPS61104671A (en) * 1984-10-29 1986-05-22 Sharp Corp Field effect transistor
US5371024A (en) * 1988-09-30 1994-12-06 Kabushiki Kaisha Toshiba Semiconductor device and process for manufacturing the same
WO2008093824A1 (en) * 2007-02-01 2008-08-07 Rohm Co., Ltd. Gan semiconductor element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4973982A (en) * 1972-11-16 1974-07-17
JPS508483A (en) * 1973-05-21 1975-01-28

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4973982A (en) * 1972-11-16 1974-07-17
JPS508483A (en) * 1973-05-21 1975-01-28

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5491069A (en) * 1977-12-28 1979-07-19 Nec Corp Mos field effect transistor
JPS54111444U (en) * 1978-01-24 1979-08-06
JPS5499573A (en) * 1978-01-24 1979-08-06 Pioneer Electronic Corp Field effect transistor
JPS54113858U (en) * 1978-01-24 1979-08-10
JPS61104671A (en) * 1984-10-29 1986-05-22 Sharp Corp Field effect transistor
US5371024A (en) * 1988-09-30 1994-12-06 Kabushiki Kaisha Toshiba Semiconductor device and process for manufacturing the same
WO2008093824A1 (en) * 2007-02-01 2008-08-07 Rohm Co., Ltd. Gan semiconductor element

Also Published As

Publication number Publication date
JPS6123669B2 (en) 1986-06-06

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