JPS5367371A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5367371A
JPS5367371A JP14215876A JP14215876A JPS5367371A JP S5367371 A JPS5367371 A JP S5367371A JP 14215876 A JP14215876 A JP 14215876A JP 14215876 A JP14215876 A JP 14215876A JP S5367371 A JPS5367371 A JP S5367371A
Authority
JP
Japan
Prior art keywords
semiconductor device
junction
insulation puncture
gate
prevented
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14215876A
Other languages
Japanese (ja)
Other versions
JPS626352B2 (en
Inventor
Akiyasu Ishitani
Yoshihiro Saito
Hajime Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP14215876A priority Critical patent/JPS5367371A/en
Publication of JPS5367371A publication Critical patent/JPS5367371A/en
Publication of JPS626352B2 publication Critical patent/JPS626352B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: The thickness and impurity density of a channel forming layer are selected to form a depletion layer all over the width before reaching the insulation puncture voltage at the PN junction exposure part of the gate, so that the insulation puncture at the surface edge part of the PN junction will be prevented.
COPYRIGHT: (C)1978,JPO&Japio
JP14215876A 1976-11-29 1976-11-29 Semiconductor device Granted JPS5367371A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14215876A JPS5367371A (en) 1976-11-29 1976-11-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14215876A JPS5367371A (en) 1976-11-29 1976-11-29 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5367371A true JPS5367371A (en) 1978-06-15
JPS626352B2 JPS626352B2 (en) 1987-02-10

Family

ID=15308702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14215876A Granted JPS5367371A (en) 1976-11-29 1976-11-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5367371A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574246U (en) * 1980-06-06 1982-01-09
JPS5764976A (en) * 1980-10-07 1982-04-20 Sanyo Electric Co Ltd Junction type field effect transistor
JPS584978A (en) * 1981-07-01 1983-01-12 Mitsubishi Electric Corp Lateral junction type field-effect transistor
JP2011527836A (en) * 2008-07-10 2011-11-04 セミサウス ラボラトリーズ， インコーポレーテッド Semiconductor device having non-punch-through semiconductor channel with enhanced conductivity and method of manufacturing the same
JP2015135844A (en) * 2014-01-16 2015-07-27 富士電機株式会社 junction field effect transistor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02106328U (en) * 1989-02-10 1990-08-23

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574246U (en) * 1980-06-06 1982-01-09
JPH0115184Y2 (en) * 1980-06-06 1989-05-08
JPS5764976A (en) * 1980-10-07 1982-04-20 Sanyo Electric Co Ltd Junction type field effect transistor
JPS584978A (en) * 1981-07-01 1983-01-12 Mitsubishi Electric Corp Lateral junction type field-effect transistor
JP2011527836A (en) * 2008-07-10 2011-11-04 セミサウス ラボラトリーズ， インコーポレーテッド Semiconductor device having non-punch-through semiconductor channel with enhanced conductivity and method of manufacturing the same
JP2015135844A (en) * 2014-01-16 2015-07-27 富士電機株式会社 junction field effect transistor

Also Published As

Publication number Publication date
JPS626352B2 (en) 1987-02-10

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