JPS5764976A - Junction type field effect transistor - Google Patents

Junction type field effect transistor

Info

Publication number
JPS5764976A
JPS5764976A JP14076380A JP14076380A JPS5764976A JP S5764976 A JPS5764976 A JP S5764976A JP 14076380 A JP14076380 A JP 14076380A JP 14076380 A JP14076380 A JP 14076380A JP S5764976 A JPS5764976 A JP S5764976A
Authority
JP
Japan
Prior art keywords
type
layer
gate
drain
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14076380A
Other languages
Japanese (ja)
Inventor
Tadahiko Tanaka
Takeshi Omukae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP14076380A priority Critical patent/JPS5764976A/en
Publication of JPS5764976A publication Critical patent/JPS5764976A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Abstract

PURPOSE:To decrease an excess gate leakage current remarkably without decrease of gm by solely changing a mesh configuration of a P<+> layer gate which splits an N type epitaxial layer on a P type Si substrate into a source and a drain. CONSTITUTION:An N type epitaxial layer 2 on a P<+> type Si substrate is isolated 8 to form an island-shaped configuration and splitted into a source 6 and a drain 4 by a P<+> type meshed gate layer 3. In this configuration the gate layer 3 is placed to be nearer to a N<+> type source connection layer 7 than to an N<+> type drain connection layer 5. By this constitution an excess gate leakage current is decreased because an avalanche phenomena does not easily occured because of wide dispersion of a depletion layer to a drain's side in spite of deep biassing of the gate 3, and a junction type FET having a high gm is obtained.
JP14076380A 1980-10-07 1980-10-07 Junction type field effect transistor Pending JPS5764976A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14076380A JPS5764976A (en) 1980-10-07 1980-10-07 Junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14076380A JPS5764976A (en) 1980-10-07 1980-10-07 Junction type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5764976A true JPS5764976A (en) 1982-04-20

Family

ID=15276169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14076380A Pending JPS5764976A (en) 1980-10-07 1980-10-07 Junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5764976A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009032927A (en) * 2007-07-27 2009-02-12 Sanyo Electric Co Ltd Semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5367371A (en) * 1976-11-29 1978-06-15 Sony Corp Semiconductor device
JPS53141586A (en) * 1977-05-16 1978-12-09 Nec Corp Junction-type field effect transistor
JPS548476A (en) * 1977-06-22 1979-01-22 Seiko Instr & Electronics Ltd Semiconductor device
JPS561574A (en) * 1979-06-18 1981-01-09 Victor Co Of Japan Ltd Junction type fet

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5367371A (en) * 1976-11-29 1978-06-15 Sony Corp Semiconductor device
JPS53141586A (en) * 1977-05-16 1978-12-09 Nec Corp Junction-type field effect transistor
JPS548476A (en) * 1977-06-22 1979-01-22 Seiko Instr & Electronics Ltd Semiconductor device
JPS561574A (en) * 1979-06-18 1981-01-09 Victor Co Of Japan Ltd Junction type fet

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009032927A (en) * 2007-07-27 2009-02-12 Sanyo Electric Co Ltd Semiconductor device

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