JPS5435684A - Junction type field effect transistor - Google Patents

Junction type field effect transistor

Info

Publication number
JPS5435684A
JPS5435684A JP10209377A JP10209377A JPS5435684A JP S5435684 A JPS5435684 A JP S5435684A JP 10209377 A JP10209377 A JP 10209377A JP 10209377 A JP10209377 A JP 10209377A JP S5435684 A JPS5435684 A JP S5435684A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
junction type
encircling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10209377A
Other languages
Japanese (ja)
Inventor
Eiichi Iwanami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP10209377A priority Critical patent/JPS5435684A/en
Publication of JPS5435684A publication Critical patent/JPS5435684A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To minimize the amount of leak currents at the channel cut-off time of a double-diffusion type JFET, by encircling source and drain regions with a gate region.
COPYRIGHT: (C)1979,JPO&Japio
JP10209377A 1977-08-25 1977-08-25 Junction type field effect transistor Pending JPS5435684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10209377A JPS5435684A (en) 1977-08-25 1977-08-25 Junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10209377A JPS5435684A (en) 1977-08-25 1977-08-25 Junction type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5435684A true JPS5435684A (en) 1979-03-15

Family

ID=14318152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10209377A Pending JPS5435684A (en) 1977-08-25 1977-08-25 Junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5435684A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5740983A (en) * 1980-08-26 1982-03-06 Nec Corp Semiconductor device and manufacture thereof
JPS57117399U (en) * 1981-01-12 1982-07-21
US4633282A (en) * 1982-10-04 1986-12-30 Rockwell International Corporation Metal-semiconductor field-effect transistor with a partial p-type drain

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5740983A (en) * 1980-08-26 1982-03-06 Nec Corp Semiconductor device and manufacture thereof
JPS6257111B2 (en) * 1980-08-26 1987-11-30 Nippon Electric Co
JPS57117399U (en) * 1981-01-12 1982-07-21
US4633282A (en) * 1982-10-04 1986-12-30 Rockwell International Corporation Metal-semiconductor field-effect transistor with a partial p-type drain

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