JPS5435684A - Junction type field effect transistor - Google Patents
Junction type field effect transistorInfo
- Publication number
- JPS5435684A JPS5435684A JP10209377A JP10209377A JPS5435684A JP S5435684 A JPS5435684 A JP S5435684A JP 10209377 A JP10209377 A JP 10209377A JP 10209377 A JP10209377 A JP 10209377A JP S5435684 A JPS5435684 A JP S5435684A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- type field
- junction type
- encircling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To minimize the amount of leak currents at the channel cut-off time of a double-diffusion type JFET, by encircling source and drain regions with a gate region.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10209377A JPS5435684A (en) | 1977-08-25 | 1977-08-25 | Junction type field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10209377A JPS5435684A (en) | 1977-08-25 | 1977-08-25 | Junction type field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5435684A true JPS5435684A (en) | 1979-03-15 |
Family
ID=14318152
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10209377A Pending JPS5435684A (en) | 1977-08-25 | 1977-08-25 | Junction type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5435684A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5740983A (en) * | 1980-08-26 | 1982-03-06 | Nec Corp | Semiconductor device and manufacture thereof |
JPS57117399U (en) * | 1981-01-12 | 1982-07-21 | ||
US4633282A (en) * | 1982-10-04 | 1986-12-30 | Rockwell International Corporation | Metal-semiconductor field-effect transistor with a partial p-type drain |
-
1977
- 1977-08-25 JP JP10209377A patent/JPS5435684A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5740983A (en) * | 1980-08-26 | 1982-03-06 | Nec Corp | Semiconductor device and manufacture thereof |
JPS6257111B2 (en) * | 1980-08-26 | 1987-11-30 | Nippon Electric Co | |
JPS57117399U (en) * | 1981-01-12 | 1982-07-21 | ||
US4633282A (en) * | 1982-10-04 | 1986-12-30 | Rockwell International Corporation | Metal-semiconductor field-effect transistor with a partial p-type drain |
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