JPS5439578A - Field effect semiconductor device of isolation gate type - Google Patents

Field effect semiconductor device of isolation gate type

Info

Publication number
JPS5439578A
JPS5439578A JP6301677A JP6301677A JPS5439578A JP S5439578 A JPS5439578 A JP S5439578A JP 6301677 A JP6301677 A JP 6301677A JP 6301677 A JP6301677 A JP 6301677A JP S5439578 A JPS5439578 A JP S5439578A
Authority
JP
Japan
Prior art keywords
semiconductor device
field effect
gate type
isolation gate
effect semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6301677A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP6301677A priority Critical patent/JPS5439578A/en
Publication of JPS5439578A publication Critical patent/JPS5439578A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To establish MIS FET enduring high temperature and less in time aging, by connecting the third FET gate to the source and the drain connecting in series two FET's, in the semiconductor device having three or more MIS FET's on the same semiconductor substrate.
COPYRIGHT: (C)1979,JPO&Japio
JP6301677A 1977-05-30 1977-05-30 Field effect semiconductor device of isolation gate type Pending JPS5439578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6301677A JPS5439578A (en) 1977-05-30 1977-05-30 Field effect semiconductor device of isolation gate type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6301677A JPS5439578A (en) 1977-05-30 1977-05-30 Field effect semiconductor device of isolation gate type

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP10870375A Division JPS51139288A (en) 1975-09-08 1975-09-08 Composite semi-conductor device

Publications (1)

Publication Number Publication Date
JPS5439578A true JPS5439578A (en) 1979-03-27

Family

ID=13217091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6301677A Pending JPS5439578A (en) 1977-05-30 1977-05-30 Field effect semiconductor device of isolation gate type

Country Status (1)

Country Link
JP (1) JPS5439578A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031280A (en) * 1983-07-31 1985-02-18 Matsushita Electric Works Ltd Mos type transistor
JPS61274359A (en) * 1985-04-01 1986-12-04 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン Small contactless ram cell
JPS62166568A (en) * 1986-01-20 1987-07-23 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
JPS63172435A (en) * 1987-01-09 1988-07-16 Matsushita Electronics Corp Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031280A (en) * 1983-07-31 1985-02-18 Matsushita Electric Works Ltd Mos type transistor
JPH055185B2 (en) * 1983-07-31 1993-01-21 Matsushita Electric Works Ltd
JPS61274359A (en) * 1985-04-01 1986-12-04 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン Small contactless ram cell
JPS62166568A (en) * 1986-01-20 1987-07-23 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
JPS63172435A (en) * 1987-01-09 1988-07-16 Matsushita Electronics Corp Semiconductor device

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