JPS548986A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS548986A JPS548986A JP7463077A JP7463077A JPS548986A JP S548986 A JPS548986 A JP S548986A JP 7463077 A JP7463077 A JP 7463077A JP 7463077 A JP7463077 A JP 7463077A JP S548986 A JPS548986 A JP S548986A
- Authority
- JP
- Japan
- Prior art keywords
- channel
- width
- semiconductor device
- drain
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To improve source-drain dielectric strength by making one width of either source region or drain region wider than the other between two channel parts on a zigzag-channel MOS transistor which has extremely long channel width than its channel length.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7463077A JPS548986A (en) | 1977-06-22 | 1977-06-22 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7463077A JPS548986A (en) | 1977-06-22 | 1977-06-22 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS548986A true JPS548986A (en) | 1979-01-23 |
JPS6114676B2 JPS6114676B2 (en) | 1986-04-19 |
Family
ID=13552703
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7463077A Granted JPS548986A (en) | 1977-06-22 | 1977-06-22 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS548986A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04358503A (en) * | 1991-06-04 | 1992-12-11 | Jun Nasu | Waste coolant treatment method |
JP2015194759A (en) * | 2001-11-09 | 2015-11-05 | 株式会社半導体エネルギー研究所 | light-emitting device |
US9577016B2 (en) | 2001-11-09 | 2017-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
-
1977
- 1977-06-22 JP JP7463077A patent/JPS548986A/en active Granted
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04358503A (en) * | 1991-06-04 | 1992-12-11 | Jun Nasu | Waste coolant treatment method |
JP2015194759A (en) * | 2001-11-09 | 2015-11-05 | 株式会社半導体エネルギー研究所 | light-emitting device |
US9577016B2 (en) | 2001-11-09 | 2017-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP2018019084A (en) * | 2001-11-09 | 2018-02-01 | 株式会社半導体エネルギー研究所 | Light-emitting device |
US9905624B2 (en) | 2001-11-09 | 2018-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US10461140B2 (en) | 2001-11-09 | 2019-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US10680049B2 (en) | 2001-11-09 | 2020-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US11063102B2 (en) | 2001-11-09 | 2021-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
Also Published As
Publication number | Publication date |
---|---|
JPS6114676B2 (en) | 1986-04-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS51142929A (en) | Production method of n channel mis semiconductor devices | |
JPS5362985A (en) | Mis type field effect transistor and its production | |
JPS53112069A (en) | Production of mis transistor | |
JPS52117586A (en) | Semiconductor device | |
JPS548986A (en) | Semiconductor device | |
JPS5384571A (en) | Insulating gate type field effect transistor and its manufacture | |
JPS52134380A (en) | Production of mis type semiconductor circuits | |
JPS5435686A (en) | Field effect semiconductor device of junction type | |
JPS5215274A (en) | Semiconductor device | |
JPS5346288A (en) | Mis type semiconductor device | |
JPS5424583A (en) | Mos field effect transistor | |
JPS52156574A (en) | Mis type semiconductor device | |
JPS5425177A (en) | Manufacture for mos type semiconductor integrated circuit device | |
JPS5227279A (en) | Semiconductor unit | |
JPS52141581A (en) | Mos type semiconductor device 7 its manufacture | |
JPS53130986A (en) | Semiconductor device and its manufacture | |
JPS5296871A (en) | Manufacture of mos type transistor | |
JPS546474A (en) | Field effect type transistor and its manufacture | |
JPS53138681A (en) | Vertical junction type field effect transistor | |
JPS5368179A (en) | Field effect transistor | |
JPS547881A (en) | Mos field effect transistor | |
JPS5268383A (en) | Manufacture of semiconductor device | |
JPS5410684A (en) | Using method of schottky gate type field effect transistors | |
JPS52113173A (en) | Mos type semiconductor device | |
JPS52130572A (en) | Preparation of mis type semiconductor circuit device |