JPS548986A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS548986A
JPS548986A JP7463077A JP7463077A JPS548986A JP S548986 A JPS548986 A JP S548986A JP 7463077 A JP7463077 A JP 7463077A JP 7463077 A JP7463077 A JP 7463077A JP S548986 A JPS548986 A JP S548986A
Authority
JP
Japan
Prior art keywords
channel
width
semiconductor device
drain
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7463077A
Other languages
Japanese (ja)
Other versions
JPS6114676B2 (en
Inventor
Hiroo Wakaumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7463077A priority Critical patent/JPS548986A/en
Publication of JPS548986A publication Critical patent/JPS548986A/en
Publication of JPS6114676B2 publication Critical patent/JPS6114676B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To improve source-drain dielectric strength by making one width of either source region or drain region wider than the other between two channel parts on a zigzag-channel MOS transistor which has extremely long channel width than its channel length.
COPYRIGHT: (C)1979,JPO&Japio
JP7463077A 1977-06-22 1977-06-22 Semiconductor device Granted JPS548986A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7463077A JPS548986A (en) 1977-06-22 1977-06-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7463077A JPS548986A (en) 1977-06-22 1977-06-22 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS548986A true JPS548986A (en) 1979-01-23
JPS6114676B2 JPS6114676B2 (en) 1986-04-19

Family

ID=13552703

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7463077A Granted JPS548986A (en) 1977-06-22 1977-06-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS548986A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04358503A (en) * 1991-06-04 1992-12-11 Jun Nasu Waste coolant treatment method
JP2015194759A (en) * 2001-11-09 2015-11-05 株式会社半導体エネルギー研究所 light-emitting device
US9577016B2 (en) 2001-11-09 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Light emitting device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04358503A (en) * 1991-06-04 1992-12-11 Jun Nasu Waste coolant treatment method
JP2015194759A (en) * 2001-11-09 2015-11-05 株式会社半導体エネルギー研究所 light-emitting device
US9577016B2 (en) 2001-11-09 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2018019084A (en) * 2001-11-09 2018-02-01 株式会社半導体エネルギー研究所 Light-emitting device
US9905624B2 (en) 2001-11-09 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US10461140B2 (en) 2001-11-09 2019-10-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US10680049B2 (en) 2001-11-09 2020-06-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US11063102B2 (en) 2001-11-09 2021-07-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device

Also Published As

Publication number Publication date
JPS6114676B2 (en) 1986-04-19

Similar Documents

Publication Publication Date Title
JPS51142929A (en) Production method of n channel mis semiconductor devices
JPS5362985A (en) Mis type field effect transistor and its production
JPS53112069A (en) Production of mis transistor
JPS52117586A (en) Semiconductor device
JPS548986A (en) Semiconductor device
JPS5384571A (en) Insulating gate type field effect transistor and its manufacture
JPS52134380A (en) Production of mis type semiconductor circuits
JPS5435686A (en) Field effect semiconductor device of junction type
JPS5215274A (en) Semiconductor device
JPS5346288A (en) Mis type semiconductor device
JPS5424583A (en) Mos field effect transistor
JPS52156574A (en) Mis type semiconductor device
JPS5425177A (en) Manufacture for mos type semiconductor integrated circuit device
JPS5227279A (en) Semiconductor unit
JPS52141581A (en) Mos type semiconductor device 7 its manufacture
JPS53130986A (en) Semiconductor device and its manufacture
JPS5296871A (en) Manufacture of mos type transistor
JPS546474A (en) Field effect type transistor and its manufacture
JPS53138681A (en) Vertical junction type field effect transistor
JPS5368179A (en) Field effect transistor
JPS547881A (en) Mos field effect transistor
JPS5268383A (en) Manufacture of semiconductor device
JPS5410684A (en) Using method of schottky gate type field effect transistors
JPS52113173A (en) Mos type semiconductor device
JPS52130572A (en) Preparation of mis type semiconductor circuit device