JP2018019084A - Light-emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting device including a driver transistor and a switching transistor, in which variation in the transistors is reduced.SOLUTION: In a light-emitting device including a driver transistor and a switching transistor, channel width of the driver transistor is smaller than channel length thereof. In this case, Full color display is performed by providing an anode-side power supply line in parallel with gate wiring.SELECTED DRAWING: Figure 8

Description

In particular, an organic light-emitting element (OLE) formed over a substrate having an insulating surface.
The present invention relates to a light emitting device having D (Organic Light Emitting Device). The present invention also relates to an OLED module in which an IC including a controller is mounted on the OLED panel. In this specification, the OLED panel and the OLED module are collectively referred to as a light emitting device. The present invention further relates to an electronic apparatus using the light emitting device.

Note that in this specification, a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics, and a light-emitting device, an electro-optical device, a semiconductor circuit, and an electronic device are all semiconductor devices.

In recent years, technology for forming TFTs (Thin Film Transistors) on a substrate has greatly advanced, and application development to active matrix display devices has been promoted. In particular, a TFT using a polysilicon film has higher field effect mobility (also referred to as mobility) than a conventional TFT using an amorphous silicon film, and thus can operate at high speed.
For this reason, a drive circuit composed of a TFT using a polysilicon film is provided on the same substrate as the pixel, and development for controlling each pixel has been actively conducted. An active matrix display device in which a pixel and a driver circuit are incorporated on the same substrate is expected to have various advantages such as a reduction in manufacturing cost, a reduction in size of the display device, an increase in yield, and a reduction in throughput.

In addition, an active matrix light-emitting device (hereinafter referred to as “LED”) having an OLED as a self-light-emitting element.
Research on the light-emitting device is active. The light emitting device is an organic light emitting device (OELD: Or
ganic EL Display) or organic light emitting diode (OLED: Organic Ligh)
t Emitting Diode).

The OLED emits light by itself and has high visibility, is not required for a backlight necessary for a liquid crystal display device (LCD), is optimal for thinning, and has no restriction on the viewing angle. For this reason, light emitting devices using OLEDs have attracted attention as display devices that replace CRTs and LCDs.

As one form of a light emitting device using an OLED, an active matrix driving method in which a plurality of TFTs are provided for each pixel and an image is displayed by sequentially writing video signals is known. The TFT is an essential element for realizing the active matrix driving method.

In addition, in realizing an active matrix driving method, in a light emitting device using an OLED, since a current flowing through the OLED is controlled by the TFT, the TFT using an amorphous silicon having a low field effect mobility can be realized. It is difficult and it is desirable to employ a semiconductor film having a crystal structure, typically a TFT using polysilicon, as a TFT connected to the OLED.

By forming a TFT with a semiconductor film having a crystal structure, typically a polysilicon film, and incorporating a pixel and a driver circuit on the same substrate, the number of connection terminals is drastically reduced and a frame region (a peripheral portion of the pixel portion) The area of the region can also be reduced.

However, even if a TFT is formed using polysilicon, the electrical characteristics are not comparable to the characteristics of a MOS transistor formed on a single crystal silicon substrate. For example, the field effect mobility of a conventional TFT is 1/10 or less that of single crystal silicon. In addition, TFTs using polysilicon have a problem that their characteristics are likely to vary due to defects formed at crystal grain boundaries.

In general, a light emitting device includes at least a TFT functioning as a switching element and an OLED.
A TFT for supplying current to each pixel is provided in each pixel. A TFT functioning as a switching element is required to have a low off-state current (I _off ), while a TFT that supplies current to an OLED is prevented from being deteriorated due to a high driving capability (on-current, I _on ) and a hot carrier effect. There is a need to improve reliability.
In addition, the TFT of the data line side driving circuit is also required to improve reliability by preventing deterioration due to a high driving capability (on current, I _on ) and a hot carrier effect.

Further, a TFT which is electrically connected to the OLED and supplies a current to the OLED regardless of a screen display driving method, for example, a dot sequential driving method, a line sequential driving method, or a plane sequential driving method. Since the luminance of the pixel is determined by the on-current (I _on ), there is a problem that the luminance varies when the on-current is not constant when the entire white display is performed. For example, when the luminance is adjusted according to the light emission time, when 64 gradations are displayed, the on-current of the TFT that is electrically connected to the OLED and supplies current to the OLED is 1.56% from a certain reference value.
(= 1/64) If there is a variation, one gradation is shifted.

In addition, when an OLED is formed, there may be a variation in the substrate due to a shift in patterning of the EL layer or a non-uniformity in the film thickness of the EL layer, resulting in a slight variation in luminance.

The present invention has been made in view of the above problems, and reduces the variation in characteristics of each TFT.
It is an object to reduce variation in luminance. Another object of the present invention is to reduce variations in OLEDs not related to variations in TFT characteristics, and to reduce variations in luminance.

Further, in the conventional active matrix light-emitting device, when an attempt is made to improve the resolution, the aperture ratio is limited by the arrangement of the electrode for the storage capacitor, the wiring for the storage capacitor, the TFT, and various wirings in the pixel portion. There was a problem.
Another object of the present invention is to provide a pixel configuration that improves the aperture ratio in the pixel portion.

As a typical index of TFT characteristics, a VI characteristic graph is known. This V
The current value changes most when the rise is steep in the −I characteristic graph (also called a rise point). Therefore, when the current supplied to the OLED is controlled by the TFT, if the rising point varies, the current value of the TFT that supplies the current to the OLED greatly changes.

Note that the voltage value at the rising point is called a threshold value (Vth) and is a voltage value at which the TFT is turned on. In general, it is said that the closer Vth is to zero, the better, and it is said that when the value of Vth is large, the drive voltage increases and the power consumption increases.

There are two types of variation in the current value of the TFT. Specifically, a simple variation 3σ of the current value and a median value (average value) of current values in a set of a certain number of TFTs.
(In this specification, this variation is also referred to as a normalized variation).

The present inventor has found that the latter variation tends to strongly depend on the gate voltage value (Vg). FIG. 3 shows various channel lengths (5 μm, 10 μm, 20 μm, 50 μm, 100
The relationship between Vg and normalized variation in p-channel TFTs (channel width W = 8 μm) of μm, 200 μm, and 400 μm) is shown. FIG. 4 shows the relationship between Vg and standardized variations in n-channel TFTs (channel width W = 8 μm) having various channel lengths.

Hereinafter, the present invention will be described in detail using measured value data of TFTs.

As the channel length of the TFT that supplies current to the OLED increases, the current value decreases and the simple variation 3σ decreases. In FIG. 11, Vd is −7 V, Vg is −3.25 V, the channel width is fixed to 8 μm, and the channel lengths are 50 μm, 100 μm, 200 μm, and 4 μm, respectively.
FIG. 6 is a graph in which a TFT having a thickness of 00 μm is manufactured, and the variation in on-current and the normalized variation are measured for each TFT.
However, as shown in FIG. 11, simply increasing the channel length only decreases the current value.
The variation (normalized variation) with respect to the median current value in a certain number of TFTs does not change.

Therefore, in the present invention, the channel length is made ten times or several hundred times that of the prior art, the TFT is designed to be turned on at a significantly higher gate voltage value, and the gate voltage input from the outside is set, The variation is reduced by driving.

Here, for a TFT in which Vd is −7 V, the channel width is fixed to 8 μm, and the channel length is 50 μm, Vg is −3 V, and variations in on-current and normalized variations are measured. Thereafter, in the same manner, a TFT having a channel length of 100 μm has a Vg of −3.
The TFT with a channel length of 200 μm measured at 75 V was measured with a Vg of −3.75 V, and the TFT with a channel length of 400 μm was measured with a Vg of −5.75 V. These measurement results are shown in FIG.

As shown in FIG. 2, as the gate voltage value (Vg) is increased as a TFT having a much longer channel length, not only a simple on-current variation but also a standardized variation can be reduced. . Here, a TFT having a long channel length is used in order to increase Vg. However, the TFT is not particularly limited. For example, the channel width W may be shortened within the allowable range of design in order to increase Vg. The resistance of the source region or the drain region may be increased, or the contact resistance may be increased.

In addition, the present invention has a TFT with a channel length that is much longer than that of the conventional one, specifically, a channel length that is several tens to several hundred times longer than the conventional one, and is turned on at a gate voltage value much higher than the conventional one. The TFT is driven as a state and has a low channel conductance gd. 1 is shown in FIG.
3 is a graph showing the channel conductance gd of each TFT under the same conditions (Vg, channel width, channel length, etc.) as the data of FIG.

In the present invention, the channel conductance gd of a TFT that supplies current to an OLED is 0 to 1 × in the range where the sum of the source-drain voltage Vd and the threshold voltage Vth is larger than the gate voltage Vg, that is, in the range of Vg <(Vd + Vth). 10 ⁻⁸ S, preferably 5 × 10 ⁻⁹ S or less,
More preferably, by using a TFT having 2 × 10 ⁻⁹ S or less, variation in the current value flowing through the TFT is reduced, and a certain current value flows through the OLED.

In addition, by reducing the channel conductance gd, it is possible to reduce variations in the OLED itself due to the shrinkage of the area of the EL layer due to patterning or heat treatment. Further, by reducing the channel conductance gd, the current flowing through the OLED can be kept constant even when the OLED deteriorates for some reason, and a constant luminance can be maintained. FIG. 12 shows an Id-Vd curve and an OLED load curve. The channel conductance gd indicates the slope of the Id-Vd curve. The smaller the channel conductance gd, the smaller the slope of the Id-Vd curve and the current value becomes substantially constant. In FIG. 12, the load curve of the OLED is Vg = −3.3 V, and when the p-channel TFT connected to the OLED is driven in the saturation region, the current value applied to the OLED and V
It is a curve which shows the relationship with d. For example, when -Vd is -17V, the voltage on the cathode side is -17V, so the voltage applied to the OLED is 0V. Therefore, the current value applied to the OLED is also zero. Further, the current value at the intersection of the Id-Vd curve and the load curve of the OLED corresponds to the luminance. In FIG. 12, when gd is small, there is an intersection when −Vd is −7 V, and the current value applied to the OLED at that time is 1 × 10 ⁻⁶ [A], and the luminance corresponding to this current value Can be obtained. When gd is small, even if the load curve of the OLED shifts to the left or right side, the current value hardly changes, so that uniform brightness can be obtained. Also, if the individual OLEDs themselves vary, the OLED load curve shifts to the right or left.
Further, when the OLED deteriorates, the load curve of the OLED shifts to the left side. When gd is large, the load curve of the OLED shifts to the left side due to deterioration and becomes a curve indicated by a dotted line.
The intersection of the ED with the load curve changes, and the current value differs before and after deterioration. On the other hand, when gd is small, even if the load curve of the OLED shifts to the left side due to deterioration, the current value hardly changes, so that variation in luminance is reduced and uniform luminance is obtained.

Here, in order to reduce the channel conductance gd, the channel length is increased and the gate voltage value is driven to be on with a much higher gate voltage value than in the past. However, even if the channel conductance gd is further reduced by other means. Good. For example, as another means for reducing the channel conductance gd, the TFT may have an LDD structure, or the channel formation region may be divided into a plurality of parts.

Conventionally, the n-channel TFT size of a pixel used in a liquid crystal panel is the channel length L
× Channel width W = 12 μm × 4 μm, L × W = 12 μm × 6 μm, etc. were used. In general, in order to improve the aperture ratio, the area occupied by the TFT of the pixel, that is, the occupied area is considered to be as small as possible. Therefore, it has not been conceivable to set the channel length to 100 μm or more. Further, as shown in FIG. 4, when the channel length is 5 μm or 10 μm, the variation is the smallest when Vg is 8V to 10V, and the variation tends to increase when Vg is 10V or more. Therefore, when the channel length is set to 100 μm or more, it is unthinkable that the variation decreases as Vg increases.

In addition, when the channel length is 100 μm or more, various shapes of the semiconductor layer can be considered. As a typical example, a shape in which the semiconductor layer 102 is meandered in the X direction as shown in FIG. In the specification, it is called A type) and as shown in FIG.
A shape in which 102 is meandered in the Y direction (referred to as a B type in this specification) and a rectangular shape (semiconductor layer 1202) as shown in FIG. 13B are shown.

In addition, by increasing the channel length, when laser light irradiation is performed as one of the steps for forming a TFT, variations in the laser light can be reduced. TFT size and semiconductor layer shape are respectively L × W = 87 μm × 7 μm (rectangular shape), L × W = 16
5 μm × 7 μm (rectangular shape), L × W = 88 μm × 4 μm (rectangular shape), L × W = 165
μm × 4 μm (rectangular shape), L × W = 500 μm × 4 μm (A type), L × W = 50
0 μm × 4 μm (B type), and the laser beam scanning speed is 1 mm / sec.
Each TFT was produced under the condition of 5 mm / sec, the TFT size and the semiconductor layer shape,
An experiment was conducted to determine the relationship with the on-current variation (3σ) of the TFT. Here, the crystallinity of polysilicon is increased by irradiating laser light. In FIG. 18, the gate voltage Vg = −5V,
FIG. 19 shows the experimental results when Vd = −6V, and FIG. 19 shows the gate voltage Vg = −10V and Vd = −.
The experimental result when it is set to 6V is shown. 18 and 19, the median value of the on-current value (μ
A) is also shown. Furthermore, TFT size and semiconductor layer shape, and TFT threshold (Vth)
The relationship with the variation (3σ) was determined and shown in FIG.

18 and 19, it can be seen that the longer the channel length L, the more the variation in on-current tends to decrease. Laser scanning speed is 0.5m from 1mm / sec
When m / sec is selected, the variation in laser light is reduced, and as the channel length L is increased, the difference in variation at different laser scanning speeds is reduced. That is, it can be said that the longer the channel length L is, the more the variation in laser light is reduced. Further, it can be seen that L × W = 500 μm × 4 μm has the smallest variation, and that the A type has less on-current variation than the B type.

From the above, it can be said from FIG. 18 and FIG. 19 that variation in luminance of the light-emitting device in which the TFT that supplies current to the OLED is operated in a voltage range until reaching the saturation region can be reduced.

Further, when the current value flowing through the TFT is compared with a constant value, the channel width W is preferably small. FIG. 21 is a graph showing variation when the current value is constant (Id = 0.5 μA). From FIG. 21, it can be said that variation in luminance of the light-emitting device in which the TFT that supplies current to the OLED is operated in the saturation region can be reduced. Similarly, L × W = 500 μm × 4 μm has the smallest variation, and it can be seen that the A type has less on-current variation than the B type.

Also in FIG. 20, the longer the channel length L is, the longer the TFT threshold (Vt
It can be seen that the variation in h) tends to decrease.

Further, as the channel length L is longer, both the threshold value and the on-current variation, that is, the electrical characteristics of the TFT are reduced. Therefore, not only the variation of the laser light but also the variations in other processes are also achieved. It can be said that it has also reduced.

Also, in a light emitting device having an OLED, it is said that the smaller the area occupied by TFTs arranged in a pixel, the better. Since the conventional TFT size is small, the variation in individual TFT characteristics is large, which is a main cause of display unevenness in the display device.

When the current flowing through the OLED is controlled by the TFT, there are roughly two methods. Specifically, there are a method for controlling current in a voltage range called a saturation region and a method for controlling current in a voltage range until the saturation region is reached. As shown in FIG. 9, the TFT applies a certain gate voltage Vg, gradually increases the voltage Vd between the source and drain, measures the flowing current value, and obtains a Vd-Id curve. Thus, a graph in which the current value is almost constant is obtained. In the present specification, the Vd range where the current value is substantially constant in the Vd-Id curve is called a saturation region.

The present invention is effective even when a TFT that supplies current to the OLED is operated in a voltage range until reaching the saturation region. In particular, the TFT that supplies current to the OLED operates in the saturation region, and the current that flows in the OLED. If the driving method keeps constant, the effect of reducing the variation can be seen remarkably.

Further, as shown in FIGS. 3 and 4, it is preferable to use a TFT that supplies current to the OLED in the p-channel TFT, which has a smaller variation than the n-channel TFT. Even if the supplied TFT is an n-channel TFT, a p-channel TF
T may be sufficient. For example, in the case where a TFT for supplying current to the OLED is a p-channel TFT, connection as shown in FIG. Further, for example, in the case where a TFT that supplies current to the OLED is an n-channel TFT, the connection shown in FIG. 10B may be performed. In FIGS. 10A and 10B, only the TFT that supplies current to the OLED is shown. However, various circuits including a plurality of TFTs may be provided at the tip of the gate electrode of the TFT. Of course, there is no particular limitation.

The structure of the invention disclosed in this specification is a light-emitting device including a light-emitting element having a cathode, an organic compound layer in contact with the cathode, and an anode in contact with the organic compound layer, and is connected to the light-emitting element. The light-emitting device is characterized in that the channel length L of the TFT is 100 μm or more, preferably 100 μm to 500 μm.

In the above configuration, the ratio of the channel width W to the channel length L of the TFT is 0.1-0.
It is characterized by being 01.

Another aspect of the invention disclosed in this specification is a light-emitting device including a light-emitting element having a cathode, an organic compound layer in contact with the cathode, and an anode in contact with the organic compound layer, the light-emitting element The ratio of the channel width W to the channel length L of the TFT connected to is 0.1 to 0.01.

In each of the above configurations, the TFT connected to the light emitting element has a channel conductance gd of 0 to 1 × 10 ⁻⁸ S in a range where the sum of the source-drain voltage Vd and the threshold voltage Vth is larger than the gate voltage Vg. , Preferably 0 to 5 × 10 ⁻⁹ S, more preferably 0 to 2 ×
It is characterized by 10 ^-9 S.

Another aspect of the invention disclosed in this specification is a light-emitting device including a light-emitting element having a cathode, an organic compound layer in contact with the cathode, and an anode in contact with the organic compound layer, the light-emitting element The TFT connected to is a light emitting device characterized in that the channel conductance gd is 0 to 2 × 10 ⁻⁹ S in the range where the sum of the source-drain voltage Vd and the threshold voltage Vth is larger than the gate voltage Vg. is there.

In each of the above structures, the TFT connected to the light-emitting element is a p-channel TFT or an n-channel TFT.

Note that a region called a channel formation region in this specification is a carrier (electron / hole).
The length of the channel formation region in the direction in which carriers flow is called the channel length, and the width is called the channel width.

Further, in this specification, the channel conductance gd indicates the conductivity of the channel and can be expressed by the following equation.

Here, L is the channel length, W is the channel width, Vg is the gate voltage, Vth is the threshold voltage, μn is the mobility, and C _OX is the oxide film capacitance. In the TFT, when Vg becomes Vth or more, channel conductance begins to occur.

In addition, when the channel length L is increased, the oxide film capacitance C _OX becomes larger, so that a part of the capacitance can be used as the holding capacitance of the OLED. Conventionally, a space for forming a storage capacitor has been required to form a storage capacitor for each pixel, and a capacitor line, a capacitor electrode, and the like have been provided. Can be omitted. Further, when forming a storage capacitor with the oxide film capacitor C _OX , the storage capacitor is formed of a gate electrode with a gate insulating film as a dielectric, and a semiconductor (channel formation region) overlapping the gate electrode through the gate insulating film. The Therefore, even if the channel length of the TFT is increased, the aperture ratio can be lowered by disposing the TFT semiconductor layer 102 below the power supply line 106 and the source wiring disposed above the gate electrode as shown in FIG. Pixel design can be performed without any problem. That is, with the pixel configuration of the present invention, a sufficient storage capacitor can be provided even if a space for forming a capacitor electrode and a capacitor wiring is omitted, and the aperture ratio can be further increased.

18 to 19, the oxide film capacitance C _OX is 192 (fF), L × when L × W = 87 μm × 7 μm (rectangular shape), respectively.
In the case of W = 165 μm × 7 μm (rectangular shape), 364.5 (fF), L × W = 88
In the case of μm × 4 μm (rectangular shape), 111.1 (fF), L × W = 165 μm × 4
208.3 (fF) in μm (rectangular shape), 631.3 (fF) in the case of L × W = 500 μm × 4 μm (A type)
In the case of L × W = 500 μm × 4 μm (B type), it is 631.3 (fF). Another value for obtaining the oxide film capacitance C _OX is the film thickness T of the gate insulating film (oxide film).
ox = 115 nm, ε ₀ = 8.8542 × 10 ⁻¹² (F / m ² ), and ε _OX = 4.1.

In each of the above configurations, the capacitance C _OX of the TFT connected to the light emitting element is 100 f.
F or more, preferably 100 fF to 700 fF.

In each of the above structures, a storage capacitor is formed by a gate electrode of a TFT connected to the light emitting element and a wiring thereon. Specifically, as shown in FIG.
Using an interlayer insulating film (an organic insulating film or an inorganic insulating film) provided over the gate electrode 100 as a dielectric, a capacitance is formed by the gate electrode 100 and the power supply line 106 overlapping the gate electrode. In FIG. 5, the area (12 μm × 127 μm = about 1524 μm ² ) overlapping the gate electrode 100 and the power supply line 106 overlapping the gate electrode is large, and a storage capacitor is formed depending on the film thickness and dielectric constant of the interlayer insulating film. Is done. All the capacitance formed between the gate electrode 100 and the power supply line 106 can function as a storage capacitor of the EL element. Therefore, it is desirable that the TFT is appropriately designed so that the total of the capacitor C _{OX of the} TFT connected to the light emitting element and the capacitor formed between the gate electrode of the TFT and the current supply line is several hundred fF. That's fine.

In this specification, all layers formed between the anode and the cathode of the OLED are defined as organic light emitting layers. Specifically, the organic light emitting layer includes a light emitting layer, a hole injection layer, an electron injection layer, a hole transport layer, an electron transport layer, and the like. Basically, the OLED has a structure in which an anode / light emitting layer / cathode is laminated in this order. In addition to this structure, the anode / hole injection layer / light emitting layer / cathode and the anode / hole injection layer / The light emitting layer / electron transport layer / cathode may be stacked in this order.

The OLED includes a layer (hereinafter, referred to as an organic light emitting layer) containing an organic compound (organic light emitting material) from which luminescence generated by applying an electric field is obtained, an anode,
And a cathode. Luminescence in organic compounds includes light emission (fluorescence) when returning from the singlet excited state to the ground state and light emission (phosphorescence) when returning from the triplet excited state to the ground state. Any one of the above-described light emission may be used, or both light emission may be used.

Although the top gate type TFT has been described as an example here, the present invention can be applied regardless of the TFT structure. For example, it can be applied to a bottom gate type (reverse stagger type) TFT or a forward stagger type TFT. Is possible.

In the light emitting device of the present invention, the screen display driving method is not particularly limited. For example, a dot sequential driving method, a line sequential driving method, a surface sequential driving method, or the like may be used.
Typically, a line sequential driving method is used, and a time-division gray scale driving method or an area gray scale driving method may be used as appropriate. The video signal input to the source line of the light-emitting device may be an analog signal or a digital signal, and a drive circuit or the like may be designed in accordance with the video signal as appropriate.

According to the present invention, in a pixel portion where a plurality of TFTs are arranged, a current T is supplied to the OLED.
In FT, not only a simple on-current variation but also a standardized variation can be reduced, and a luminance variation can be remarkably reduced in a display device having an OLED.

Further, according to the present invention, even if variations in TFT manufacturing processes such as laser light irradiation conditions occur, variations in electrical characteristics between TFTs can be reduced.

Further, according to the present invention, in addition to reducing variations between TFTs, variations in the OLED itself caused by area shrinkage of the EL layer due to patterning or heat treatment can be reduced.

Further, according to the present invention, in addition to reducing the variation between TFTs, even if the OLED deteriorates for some reason, the current flowing through the OLED can be kept constant, and a constant luminance can be maintained.

Further, according to the present invention, a part of the capacitor Cox of the TFT can be intentionally used as a storage capacitor, so that the pixel structure can be simplified and the aperture ratio can be improved.

It is a figure which shows the relationship between the channel length of TFT, and channel conductance gd. It is a figure which shows 3σ which shows the variation of electric current, and 3σ which shows the variation of the normalized electric current. It is a graph which shows the relationship between the variation in the electric current of n channel type TFT in a certain channel length, and Vg. It is a graph which shows the relationship between the variation in the electric current of n channel type TFT in a certain channel length, and Vg. It is a figure which shows a pixel top view. It is a figure which shows a pixel top view. It is a diagram showing a cross-sectional structure of an active matrix light-emitting display device. It is a diagram showing an equivalent circuit of an active matrix light emitting display device. It is a figure which shows the graph which shows an Id-Vd curve. It is a figure which shows the connection relationship of TFT connected with OLED and this OLED. It is a figure which shows 3σ which shows the variation of electric current, and 3σ which shows the variation of the normalized electric current. It is a figure which shows the load curve and Od-Vd curve of OLED. It is a figure which shows a pixel top view. (Example 2) It is a figure which shows a module. (Example 3) It is a figure which shows a module. (Example 3) It is a figure which shows an electronic device. Example 4 It is a figure which shows an electronic device. Example 4 It is a graph (Vg = -5V) which shows the relationship between TFT size of this invention, and the variation in on-current. It is a graph (Vg = -10V) which shows the relationship between TFT size of this invention, and the variation in on-current. It is a graph which shows the relationship between the TFT size of this invention, and the dispersion | variation in a threshold value. It is a graph which shows the relationship between the TFT size of this invention and the variation in on-state current with a constant current value (Id = 0.5 μA).

  Embodiments of the present invention will be described below.

FIG. 5 is an enlarged top view of a part of a pixel portion of a light emitting device having an OLED.
In FIG. 5, for simplicity, the EL layer is not shown, and only one electrode (pixel electrode 107) of the OLED is shown.

In FIG. 5, a semiconductor layer 101 is a layer that becomes an active layer of a switching TFT, a region overlapping with the gate wiring 105 is a channel formation region, a region connected to the source wiring 104 is a source region (or drain region), and a connection electrode A region connected to 103 is a drain region (or source region). Note that the switching TFT has a double gate structure having two channel formation regions.

The semiconductor layer 102 is a layer that becomes an active layer of a TFT that supplies current to the OLED.
A region overlapping with the gate electrode 100 is a channel formation region. T to supply current to OLED
The gate electrode 100 of the FT is connected to the connection electrode 103.
Further, the source region (or drain region) of the TFT that supplies current to the OLED and the power supply line 106 are connected, and the drain region (or source region) of TFT that supplies current to the OLED and the connection electrode 108 are connected. A pixel electrode 107 is formed in contact with the connection electrode 108. Further, the power supply line 106 and the source wiring of an adjacent pixel are arranged so as to partially overlap above the gate electrode 100. Note that in the semiconductor layer 102, a power supply line 106 is disposed above a channel formation region overlapping with the gate electrode 100 with a gate insulating film interposed therebetween.
And the source wirings of adjacent pixels are arranged so as to partially overlap. This gate electrode 10
All the capacitance formed between 0 and the power supply line 106 can be used as a storage capacitor of the EL element. Accordingly, it is possible to secure a certain amount of storage capacity required for the capacity formed between the gate electrode 100 and the power supply line 106.

FIG. 6 is a top view corresponding to FIG. 5 and shows the semiconductor layers 101 and 102 and the gate wiring 10.
5 is a view at a stage where the gate electrode 100 is formed. The semiconductor layer 102 is the gate electrode 100.
A region that overlaps with a gate insulating film (not shown), that is, a channel formation region is indicated by a dotted line in FIG.

In the present invention, the length of the channel formation region of the TFT for supplying current to the OLED (channel length L
) Is a significantly longer TFT (L = 100 μm to 500 μm, here, 500 μm), and is driven to be turned on at a gate voltage value that is significantly higher than the conventional one, and the channel conductance gd
TFT (gd = 0 to 1 × 10 ⁻⁸ S, preferably 5 × 10 ⁻⁹ S or less, here 2 × 1
0 ⁻⁹ S or less).

With the above configuration, as shown in FIG. 2, in the pixel portion where a plurality of TFTs are arranged, the TFT that supplies current to the OLED has not only a simple on-current variation but also a standardized variation. Therefore, variation in luminance can be remarkably reduced in a display device having an OLED.

In addition, the present invention provides a method for driving an OLED in a voltage range called a saturation region.
When the method of controlling the current flowing through D is adopted, it has a very remarkable effect. By adopting the above configuration, as shown in FIG. 12, in addition to reducing variation between TFTs, OLED
Variations that occur during fabrication (variations in the OLED itself that are caused by pattern shrinkage or area shrinkage of the EL layer due to heat treatment) can also be reduced. Further, with the above configuration, as shown in FIG. 12, in addition to reducing the variation between TFTs, even if the OLED deteriorates for some reason, the current flowing through the OLED can be kept constant, and the constant luminance can be maintained. Can be held.

Further, the present invention provides a method for driving an OLED in the voltage range until the saturation region is reached.
A method of controlling the current flowing through the LED is also useful.

Needless to say, the present invention is not limited to the top views of FIGS. 5 and 6 illustrate an example of a light-emitting device that emits light through a substrate on which a TFT is formed (typically, the light-emitting device illustrated in FIG. 14). The TFT has a long channel length L in order to widen the opening because it is a region where the connection electrode 108 is not formed.
Are arranged below the power supply line 106 and the source wiring. TF with a long channel length L
All the capacitance formed between the T gate electrode 100 and the power supply line 106 can also be used as a storage capacitor of the EL element. In the case of a light emitting device that emits light in the direction opposite to that in FIGS. 5 and 6 (typically, the light emitting device shown in FIG. 15), the opening is the same region as the pixel electrode, and the TFT has a long channel length L. May be disposed below the pixel electrode, and a TFT having an even longer channel length L of 500 μm or more can be formed.

In addition, with the pixel structure shown in FIGS. 5 and 6, a part of the oxide film capacitor Cox can be used as a storage capacitor without forming a capacitor portion for forming a storage capacitor. A storage capacitor and a memory (SRAM, DRAM, etc.) may be formed.
Further, a structure in which a plurality of (two or three or more) TFTs and various circuits (such as a current mirror circuit) are incorporated in one pixel may be employed.

Although the top gate type TFT has been described as an example here, the present invention can be applied regardless of the TFT structure. For example, it can be applied to a bottom gate type (reverse stagger type) TFT or a forward stagger type TFT. Is possible.

The present invention having the above-described configuration will be described in more detail with the following examples.

Here, a pixel portion (n-channel TFT and p-channel TFT) and a driver circuit TFT (n-channel TFT and p-channel TFT) provided on the periphery of the pixel portion are simultaneously manufactured on the same substrate, and an OLED is manufactured. A manufacturing method for manufacturing the light-emitting device having the above will be described in detail.

First, as a lower layer 301 of a base insulating film by a plasma CVD method on a heat resistant glass substrate (first substrate 300) having a thickness of 0.7 mm, a deposition temperature of 400 ° C. by a plasma CVD method, source gases SiH ₄ , NH ₃ , A silicon oxynitride film made of N ₂ O (composition ratio: Si = 32%, O =
27%, N = 24%, H = 17%) is formed to 50 nm (preferably 10 to 200 nm). Next, after cleaning the surface with ozone water, the oxide film on the surface is removed with dilute hydrofluoric acid (1/100 dilution). Next, as the upper layer 302 of the base insulating film, a film formation temperature of 400 ° C. by a plasma CVD method,
Silicon oxynitride film produced from source gases SiH ₄ and N ₂ O (composition ratio Si = 32%, O =
59%, N = 7%, H = 2%) are laminated to a thickness of 100 nm (preferably 50-200 nm), and further, the film forming temperature is 300 ° C. and the film forming gas SiH by the plasma CVD method without opening to the atmosphere. _Four
A semiconductor film having an amorphous structure (here, an amorphous silicon film) is 54 nm thick (here,
Preferably, it formed in 25-80 nm.

Although the base insulating film 104 is shown as a two-layer structure in this embodiment, it may be formed as a single layer film of an insulating film containing silicon as a main component or a structure in which two or more layers are stacked. The material of the semiconductor film is not limited, but is preferably silicon or silicon germanium (Si _x Ge _1-x (X = 0.
(0001 to 0.02)) An alloy or the like may be used and formed by a known means (such as sputtering, LPCVD, or plasma CVD). The plasma CVD apparatus may be a single wafer type apparatus or a batch type apparatus. Alternatively, the base insulating film and the semiconductor film may be successively formed without being exposed to the air in the same film formation chamber.

Next, after cleaning the surface of the semiconductor film having an amorphous structure, the surface is about 2 nm with ozone water.
An extremely thin oxide film is formed. Next, a small amount of impurity element (boron or phosphorus) is doped in order to control the threshold value of the TFT. Here, an ion doping method in which diborane (B ₂ H ₆ ) is plasma-excited without mass separation is used, and the doping condition is an acceleration voltage of 15 kV,
A gas obtained by diluting diborane to 1% with hydrogen has a flow rate of 30 sccm and a dose of 2 × 10 ¹² / c.
Boron was added to the amorphous silicon film at m ² .

Next, a nickel acetate salt solution containing 10 ppm of nickel in terms of weight was applied with a spinner. Instead of coating, a method of spreading nickel element over the entire surface by sputtering may be used.

Next, heat treatment is performed for crystallization, so that a semiconductor film having a crystal structure is formed.
For this heat treatment, heat treatment in an electric furnace or irradiation with strong light may be used. When the heat treatment is performed in an electric furnace, the heat treatment may be performed at 500 ° C. to 650 ° C. for 4 to 24 hours. Here, after heat treatment for dehydrogenation (500 ° C., 1 hour), heat treatment for crystallization (550 ° C., 4 hours) was performed to obtain a silicon film having a crystal structure. Although crystallization is performed here using heat treatment using a furnace, crystallization may be performed using a lamp annealing apparatus capable of crystallization in a short time. Although a crystallization technique using nickel as a metal element for promoting crystallization of silicon is used here, other known crystallization techniques such as a solid phase growth method and a laser crystallization method may be used.

Next, after removing the oxide film on the surface of the silicon film having a crystal structure with dilute hydrofluoric acid or the like, laser light (XeCl: wavelength 308 n) for increasing the crystallization rate and repairing defects left in the crystal grains
m) Irradiation is performed in the air or in an oxygen atmosphere. As the laser light, excimer laser light having a wavelength of 400 nm or less, and second harmonic and third harmonic of a YAG laser are used. Here, a pulsed laser beam having a repetition frequency of about 10 to 1000 Hz is used, and the laser beam is condensed to 100 to 500 mJ / cm ² by an optical system, and irradiated with an overlap rate of 90 to 95%. May be scanned. Here, repetition frequency 30 Hz, energy density 4
Laser irradiation was performed in the air at 70 mJ / cm ² . Note that since the reaction is performed in the air or in an oxygen atmosphere, an oxide film is formed on the surface by laser light irradiation. Although an example using a pulsed laser is shown here, a continuous wave laser may be used, and in order to obtain a crystal with a large grain size when crystallizing an amorphous semiconductor film, continuous wave is possible. It is preferable to use a solid-state laser and apply the second to fourth harmonics of the fundamental wave. Typically, a second harmonic (532 nm) or a third harmonic (355 nm) of an Nd: YVO ₄ laser (fundamental wave 1064 nm) may be applied. In the case of using a continuous wave laser, laser light emitted from a continuous wave YVO ₄ laser having an output of 10 W is converted into a harmonic by a non-linear optical element. There is also a method of emitting harmonics by putting a YVO ₄ crystal and a nonlinear optical element in a resonator. Then, it is preferably formed into a rectangular or elliptical laser beam on the irradiation surface by an optical system, and irradiated to the object to be processed. At this time, the energy density of approximately 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ²⁾ is required. Then, irradiation may be performed by moving the semiconductor film relative to the laser light at a speed of about 10 to 2000 cm / s.

Here, a technique of irradiating laser light after performing thermal crystallization using nickel as a metal element for promoting crystallization of silicon is used. However, a continuous wave laser (YVO ₄ ) is used without adding nickel. The amorphous silicon film may be crystallized by the second harmonic of the laser.

Next, the oxide film formed by laser light irradiation is removed with dilute hydrofluoric acid, and then the surface is treated with ozone water for 120 seconds to form a barrier layer made of an oxide film having a total thickness of 1 to 5 nm. Here, the barrier layer is formed using ozone water, but the surface of the semiconductor film having a crystal structure is oxidized by a method of oxidizing the surface of the semiconductor film having a crystal structure by irradiation with ultraviolet light in an oxygen atmosphere or the oxygen plasma treatment. The barrier layer may be formed by depositing an oxide film of about 1 to 10 nm by a method, plasma CVD method, sputtering method or vapor deposition method. In this specification, a barrier layer refers to a layer that has a film quality or a film thickness that allows a metal element to pass in a gettering step and that serves as an etching stopper in a step of removing a layer that becomes a gettering site.

Next, an amorphous silicon film containing an argon element serving as a gettering site is formed with a thickness of 50 nm to 400 nm, here 150 nm, over the barrier layer by a sputtering method. The film forming conditions here were a film forming pressure of 0.3 Pa, a gas (Ar) flow rate of 50 (sccm), a film forming power of 3 kW, and a substrate temperature of 150 ° C. Note that the atomic concentration of the argon element contained in the amorphous silicon film under the above conditions is 3 × 10 ²⁰ / cm ^{3 to} 6 × 10 ²⁰ / cm ³ , and the atomic concentration of oxygen is 1 × 10 ¹⁹ / cm ³ to 3 × 10 ¹⁹ / cm ³ . Then, using an electric furnace 550
The nickel concentration in the semiconductor film having a crystal structure was reduced by performing heat treatment at 4 ° C. for 4 hours to perform gettering.
A lamp annealing apparatus may be used instead of the electric furnace.

Next, the amorphous silicon film containing an argon element as a gettering site is selectively removed using the barrier layer as an etching stopper, and then the barrier layer is selectively removed with dilute hydrofluoric acid. Note that during gettering, nickel tends to move to a region with a high oxygen concentration, and thus it is desirable to remove the barrier layer made of an oxide film after gettering.

Next, after forming a thin oxide film with ozone water on the surface of the obtained silicon film having a crystal structure (also called a polysilicon film), a mask made of resist is formed and etched into a desired shape to form islands. A separated semiconductor layer is formed. After the semiconductor layer is formed, the resist mask is removed.

Next, the oxide film is removed with an etchant containing hydrofluoric acid, and at the same time, the surface of the silicon film is washed, and then an insulating film containing silicon as a main component and serving as the gate insulating film 303 is formed. here,
A silicon oxynitride film with a thickness of 115 nm by plasma CVD (composition ratio Si = 32%,
O = 59%, N = 7%, H = 2%).

Next, a first conductive film having a thickness of 20 to 100 nm and a thickness of 100 to 40 are formed over the gate insulating film.
A second conductive film with a thickness of 0 nm is stacked. In this embodiment, a film thickness of 5 is formed on the gate insulating film 303.
A tantalum nitride film having a thickness of 0 nm and a tungsten film having a thickness of 370 nm are sequentially stacked, and patterning is performed in the following procedure to form each gate electrode and each wiring.

As the conductive material for forming the first conductive film and the second conductive film, Ta, W, Ti, Mo,
It is formed of an element selected from Al and Cu, or an alloy material or a compound material containing the element as a main component. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus, or an AgPdCu alloy may be used as the first conductive film and the second conductive film. Moreover, it is not limited to a two-layer structure, for example, a tungsten film with a film thickness of 50 nm, a film thickness of 500 n
A three-layer structure in which an aluminum alloy film (Al—Si) of m and a titanium nitride film with a thickness of 30 nm are sequentially stacked may be employed. In the case of a three-layer structure, tungsten nitride may be used instead of tungsten of the first conductive film, or aluminum instead of the aluminum and silicon alloy (Al-Si) film of the second conductive film. A titanium alloy film (Al—Ti) may be used, or a titanium film may be used instead of the titanium nitride film of the third conductive film. Moreover, a single layer structure may be sufficient.

An ICP (Inductively Coupled Plasma) etching method may be used for the etching of the first conductive film and the second conductive film (first etching process and second etching process). Using the ICP etching method, the film is formed into a desired taper shape by appropriately adjusting the etching conditions (the amount of power applied to the coil-type electrode, the amount of power applied to the substrate-side electrode, the electrode temperature on the substrate side, etc.) Can be etched. here,
After forming a resist mask, 700 W RF (13.56 MHz) power is applied to the coil-type electrode at a pressure of 1 Pa as a first etching condition, and CF ₄ and Cl ₂ are used as etching gases.
And O ₂ , each gas flow rate ratio is 25/25/10 (sccm), and the substrate side (
150 W of RF (13.56 MHz) power is also applied to the sample stage, and a substantially negative self-bias voltage is applied. Note that the electrode area size on the substrate side is 12.5 cm × 12.5 cm, and the coil-type electrode area size (here, a quartz disk provided with a coil) has a diameter of 25 c.
m disk. The W film is etched under this first etching condition so that the end portion is tapered. Thereafter, the second etching condition is changed without removing the mask made of resist, CF ₄ and Cl ₂ are used as etching gases, and the respective gas flow ratios are set to 30/30 (sc
The plasma was generated by applying 500 W of RF (13.56 MHz) power to the coil-type electrode at a pressure of 1 Pa, and etching was performed for about 30 seconds. 2 on the substrate side (sample stage)
Apply 0 W RF (13.56 MHz) power and apply a substantially negative self-bias voltage. CF ₄
Under the second etching condition in which tantalum and Cl ₂ are mixed, the W film and the TaN film are etched to the same extent. Here, the first etching condition and the second etching condition are referred to as a first etching process.

Next, a second etching process is performed without removing the resist mask.
Here, as the third etching condition, CF ₄ and Cl ₂ are used as etching gases, the respective gas flow ratios are set to 30/30 (sccm), and a coil type electrode is applied to a coil-type electrode at a pressure of 1 Pa.
Etching was performed for 60 seconds by applying plasma of W by applying W RF (13.56 MHz) power. 20W RF (13.56MHz) on the substrate side (sample stage)
Apply power and apply a substantially negative self-bias voltage. Thereafter, the resist mask is not removed and the fourth etching condition is changed, and CF ₄ , Cl _2, and O ₂ are used as etching gases.
The gas flow ratio is 20/20/20 (sccm), and 500 W of RF (13.56 MHz) power is applied to the coil-type electrode at a pressure of 1 Pa to generate plasma for about 20 seconds. Etching was performed. 20 W of RF (13.56 MHz) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. Here, the third etching condition and the fourth etching condition are referred to as a second etching process. At this stage, the gate electrode 304 having the first conductive layer 304a as a lower layer and the second conductive layer 304b as an upper layer.
And each electrode 305-307 is formed. At this stage, the upper surface structure of the pixel may be, for example, as shown in FIG.

Next, after removing the resist mask, a first doping process is performed in which the entire surface is doped with the gate electrodes 304 to 307 as masks. The first doping process may be performed by an ion doping method or an ion implantation method. The ion doping conditions are as follows.
The acceleration is performed at 5 × 10 ¹⁴ atoms / cm ² and an acceleration voltage of 60 to 100 keV. Typically, phosphorus (P) or arsenic (As) is used as the impurity element imparting n-type conductivity. Self-aligning manner a first impurity region (n ^- region) 322 to 325 are formed.

Next, a new resist mask is formed. At this time, the switching TFT 4
In order to reduce the off-current value of 03, the mask is formed so as to cover a channel formation region and a part of the semiconductor layer in which the switching TFT 403 of the pixel portion 401 is formed. The mask is also provided to protect the channel formation region of the semiconductor layer forming the p-channel TFT 406 of the driver circuit and the surrounding region. In addition, the mask is a current control T of the pixel unit 401.
A channel forming region of the semiconductor layer forming the FT 404 and its surrounding region are formed.

Next, a second doping process is selectively performed using the resist mask to form an impurity region (n ⁻ region) which overlaps with a part of the gate electrode. The second doping process may be performed by an ion doping method or an ion implantation method. Here, an ion doping method is used, a gas in which phosphine (PH ₃ ) is diluted to 5% with hydrogen is set to a flow rate of 30 sccm, a dose is set to 1.5 × 10 ¹⁴ atoms / cm ² , and an acceleration voltage is set to 90 keV. In this case, the resist mask and the second conductive layer serve as a mask for the impurity element imparting n-type conductivity, and second impurity regions 311 and 312 are formed. In the second impurity region, 1 × 10 ¹⁶ to
An impurity element imparting n-type is added in a concentration range of 1 × 10 ¹⁷ / cm ³ . Here, a region having the same concentration range as the second impurity region is also referred to as an n ⁻ region.

Next, a third doping process is performed without removing the resist mask.
The third doping process may be performed by an ion doping method or an ion implantation method.
Typically, phosphorus (P) or arsenic (As) is used as the impurity element imparting n-type conductivity.
Here, an ion doping method is used, a gas obtained by diluting phosphine (PH ₃ ) with hydrogen to 5% has a flow rate of 40 sccm, a dose amount of 2 × 10 ¹⁵ atoms / cm ² , and an acceleration voltage of 80 keV.
Do as. In this case, the resist mask, the first conductive layer, and the second conductive layer serve as a mask for the impurity element imparting n-type conductivity, and third impurity regions 313, 314, and 326 are provided.
~ 328 are formed. An impurity element imparting n-type conductivity is added to the third impurity region in a concentration range of 1 × 10 ²⁰ to 1 × 10 ²¹ / cm ³ . Here, a region having the same concentration range as the third impurity region is also referred to as an n ⁺ region.

Next, after removing the resist mask, a new resist mask is formed and a fourth doping process is performed. By the fourth doping treatment, fourth impurity regions 318, 319, 332, 333 in which an impurity element imparting p-type conductivity is added to the semiconductor layer forming the semiconductor layer for forming the p-channel TFT, and 5 impurity regions 316, 317
, 330, 331 are formed.

The fourth impurity regions 318, 319, 332, and 333 have 1 × 10 ²⁰ to 1 × 10 ²¹ / c.
An impurity element imparting p-type is added in the concentration range of m ³ . Note that the fourth impurity regions 318, 319, 332, and 333 have phosphorus (P) in the previous step.
There added region ^- is a (n region), the 1.5 the concentration of the impurity element imparting p-type
It is added 3 times and the conductivity type is p-type. Here, a region having the same concentration range as the fourth impurity region is also referred to as a p ⁺ region.

The fifth impurity regions 316, 317, 330, and 331 are formed in a region overlapping the tapered portion of the second conductive layer, and have a concentration range of 1 × 10 ¹⁸ to 1 × 10 ²⁰ / cm ^3. An impurity element imparting p-type is added. Here, a region having the same concentration range as the fifth impurity region is also referred to as a p ⁻ region.

Through the above steps, impurity regions having n-type or p-type conductivity are formed in each semiconductor layer. The conductive layers 304 to 307 serve as TFT gate electrodes.

Next, an insulating film (not shown) that covers substantially the entire surface is formed. In this embodiment, plasma C
A silicon oxide film with a thickness of 50 nm was formed by the VD method. Of course, this insulating film is not limited to the silicon oxide film, and another insulating film containing silicon may be used as a single layer or a laminated structure.

Next, a step of activating the impurity element added to each semiconductor layer is performed. This activation step may be a rapid thermal annealing method (RTA method) using a lamp light source, a method of irradiating a YAG laser or an excimer laser from the back surface, a heat treatment using a furnace, or a combination thereof. By different methods.

Further, in this embodiment, an example in which an insulating film is formed before the activation is shown, but an insulating film may be formed after the activation.

Next, a first interlayer insulating film 308 made of a silicon nitride film is formed and heat treatment (300 to 300-
(Step of heat treatment at 550 ° C. for 1 to 12 hours) to hydrogenate the semiconductor layer. This step is a step of terminating dangling bonds in the semiconductor layer with hydrogen contained in the first interlayer insulating film 308. The semiconductor layer can be hydrogenated regardless of the presence of an insulating film (not shown) made of a silicon oxide film. As another means of hydrogenation, plasma hydrogenation (using hydrogen excited by plasma) may be performed.

Next, a second interlayer insulating film 309 made of an organic insulating material is formed on the first interlayer insulating film 308.
Form. In this embodiment, an acrylic resin film 309a having a thickness of 1.6 μm is formed by a coating method, and a 200 nm silicon nitride film 309b is further laminated by a sputtering method. In addition,
Here, an example in which a silicon nitride film is laminated on 1.6 μm acrylic resin is shown, but the material or film thickness of the interlayer insulating film is not particularly limited, and the gate electrode and the power supply line formed thereon are formed. When forming a capacitance between the layers, the film thickness of the organic insulating film or inorganic insulating film is appropriately set to 0.5 μm.
What is necessary is just to be -2.0 micrometers.

Next, a pixel electrode 334 is formed so as to be in contact with and overlap with a connection electrode to be formed later in contact with the drain region of the current control TFT 404 formed of a p-channel TFT. In this example,
The pixel electrode functions as an anode of the OLED and a transparent conductive film is used in order to allow light emission of the OLED to pass through the pixel electrode.

Next, a contact hole reaching the conductive layer to be a gate electrode or a gate wiring and a contact hole reaching each impurity region are formed. In this embodiment, a plurality of etching processes are sequentially performed. In this embodiment, after the third interlayer insulating film is etched using the second interlayer insulating film as an etching stopper, the second interlayer insulating film is etched using the first interlayer insulating film as an etching stopper, and then the first interlayer insulating film is etched. The insulating film was etched.

Thereafter, electrodes 335 to 341, specifically source wirings, power supply lines, lead electrodes, connection electrodes, and the like are formed using Al, Ti, Mo, W, or the like. Here, patterning was performed using a laminated film of a Ti film (film thickness: 100 nm), an Al film containing silicon (film thickness: 350 nm), and a Ti film (film thickness: 50 nm) as materials for these electrodes and wirings. Thus, a source electrode and a source wiring, a connection electrode, a lead electrode, a power supply line, and the like are appropriately formed. The lead electrode for making contact with the gate wiring covered with the interlayer insulating film is provided at the end of the gate wiring, and the end of each other wiring is also connected to an external circuit or an external power source. An input / output terminal portion provided with a plurality of electrodes is formed. In addition, the connection electrode 341 provided so as to be in contact with and overlap with the pixel electrode 334 formed earlier is in contact with the drain region of the current control TFT 404.

As described above, the n-channel TFT 405, the p-channel TFT 406, and the driver circuit 402 including a CMOS circuit in which these are complementarily combined, and a plurality of n-channel TFTs 403 or p-channel TFTs 404 are provided in one pixel. The pixel portion 401 can be formed.

In this embodiment, the length of the channel formation region 329 of the p-channel TFT 404 connected to the OLED 400 is remarkably long. For example, the top structure may be as shown in FIG. In FIG. 5, the channel length L is set to 500 μm. The channel width W was 4 μm.

When the patterning of each electrode is completed, the resist is removed and heat treatment is performed. Then, insulators 342a and 342b called banks are formed at both ends so as to cover the end portions of the pixel electrodes 334. The banks 342a and 342b may be formed using an insulating film or a resin film containing silicon.
Here, after patterning an insulating film made of an organic resin film to form the bank 342a,
A silicon nitride film is formed by sputtering and patterned to form a bank 342b.

Next, the EL layer 343 and the OLED on the pixel electrode 334 whose both ends are covered with the bank
The cathode 344 is formed.

As the EL layer 343, a light-emitting layer, a charge transport layer, or a charge injection layer can be freely combined to form E
An L layer (a layer for causing light emission and carrier movement therefor) may be formed. For example, a low molecular organic EL material or a high molecular organic EL material may be used. As the EL layer, a thin film made of a light emitting material (singlet compound) that emits light (fluorescence) by singlet excitation, or a thin film made of a light emitting material (phosphorescence) that emits light (phosphorescence) by triplet excitation can be used. It is also possible to use an inorganic material such as silicon carbide for the charge transport layer or the charge injection layer. As these organic EL materials and inorganic materials, known materials can be used.

A material used for the cathode 344 is a metal having a small work function (typically 1 in the periodic table).
It is considered preferable to use a metal element belonging to Group 2 or Group 2) or an alloy containing these. The smaller the work function is, the better the light emission efficiency is. Therefore, among them, the material used for the cathode is preferably an alloy material containing Li (lithium), which is one of alkali metals. Note that the cathode also functions as a wiring common to all the pixels, and has a terminal electrode in the input terminal portion via the connection wiring.

  FIG. 7 shows a stage where the steps so far are completed.

Next, the OLED having at least a cathode, an organic compound layer, and an anode is sealed with an organic resin, a protective film, a sealing substrate, or a sealing can, thereby completely blocking the OLED from the outside, It is preferable to prevent entry of a substance that promotes deterioration of the EL layer due to oxidation, such as oxygen. However, a protective film or the like is not necessarily provided in the input / output terminal portion that needs to be connected to the FPC later.

Next, an FPC (flexible printed circuit) is attached to each electrode of the input / output terminal portion with an anisotropic conductive material. The anisotropic conductive material is composed of resin and conductive particles having a diameter of several tens to several hundreds μm whose surface is plated with Au or the like, and is formed on each electrode and FPC of the input / output terminal portion by the conductive particles. Electrical connection with wiring.

If necessary, an optical film such as a circularly polarizing plate composed of a polarizing plate and a retardation plate may be provided, or an IC chip or the like may be mounted.

  Through the above steps, a modular light emitting device to which an FPC is connected is completed.

Further, in the case of full color display, an equivalent circuit diagram in the pixel portion of this embodiment is shown in FIG.
701 in FIG. 8 corresponds to the switching TFT 403 in FIG. 7, and 702 corresponds to the current control TFT 404. In the pixel that displays red, an OLED 703R that emits red light is connected to the drain region of the current control TFT 404, and an anode-side power supply line (R) 706R is provided in the source region. The OLED 703R includes a cathode side power supply line 70.
0 is provided. In the pixel displaying green, an OLED 703G that emits green light is connected to the drain region of the current control TFT, and the anode side power line (G) 7 is connected to the source region.
06G is provided. In the pixel displaying blue, an OLED 703B that emits blue light is connected to the drain region of the current control TFT, and the anode side power line (B
706B is provided. Different voltages are applied to the pixels of different colors depending on the EL material. In this embodiment, in order to reduce the channel conductance gd,
The channel length is increased, and the device is driven in the ON state with a gate voltage value much higher than before.

Here, a time-division gray scale driving method which is one of line sequential driving methods is used as a display driving method. The video signal input to the source line may be an analog signal,
It may be a digital signal, and a drive circuit or the like may be designed according to the video signal as appropriate.

In this embodiment, FIGS. 13A and 13B are top views partially different from the top views (FIGS. 5 and 6) in which a part of the pixel portion of Embodiment 1 is enlarged.

FIG. 13A is a top view corresponding to FIG. 6, and the same portions are denoted by the same reference numerals.
FIG. 13A illustrates an example in which a semiconductor layer 1102 having a different patterning shape is used instead of the semiconductor layer 102 in FIG. Here, the semiconductor layer 1102 is meandered. In FIG. 13A, the channel length L × channel width W is the same as that in FIG. 6 and is 500 μm × 4.
μm. FIG. 13A is the same as the first embodiment except for the semiconductor layer 1102 having a different patterning shape. Therefore, the first embodiment may be referred to for description of other portions.

FIG. 13B shows another different top view. The same reference numerals are used for the same parts corresponding to those in FIG. FIG. 13B illustrates an example in which a semiconductor layer 1202 having a different patterning shape is used instead of the semiconductor layer 102 in FIG. 6, and an electrode 1200 having a different patterning shape is used instead of the electrode 100. In FIG. 13B, the channel length is 165 μm. FIG.
3 (B) is the first embodiment except for the semiconductor layer 1202 and the electrode 1200 having different patterning shapes.
Therefore, the first embodiment may be referred to for the description of other parts.

  This embodiment can be freely combined with Embodiment Mode or Embodiment 1.

The top view and sectional drawing of the module type light-emitting device (it is also called EL module) obtained by Example 1 or Example 2 are shown.

FIG. 6A is a top view showing the EL module, and FIG.
It is sectional drawing cut | disconnected by. 14A, a base insulating film 501 is provided over a substrate 500 (eg, heat resistant glass), over which a pixel portion 502, a source side driver circuit 504,
In addition, a gate side driving circuit 503 is formed. These pixel portions and driving circuits can be obtained according to the first and second embodiments.

Reference numeral 518 denotes an organic resin, 519 denotes a protective film, and the pixel portion and the driver circuit portion are covered with the organic resin 518, and the organic resin is covered with the protective film 519. Furthermore, you may seal with a cover material using an adhesive agent. You may adhere | attach a cover material before peeling as a support body.

Reference numeral 508 denotes wiring for transmitting signals input to the source side driver circuit 504 and the gate side driver circuit 503, and receives a video signal and a clock signal from an FPC (flexible printed circuit) 509 serving as an external input terminal. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC. The light emitting device in this specification includes not only the light emitting device body but also FPC or P
It shall include the state where WB is attached.

Next, a cross-sectional structure is described with reference to FIG. A base insulating film 501 is provided in contact with the substrate 500, and the pixel portion 502 and the gate side driver circuit 503 are provided above the insulating film 501.
The pixel portion 502 is formed by a plurality of pixels including a current control TFT 511 and a pixel electrode 512 electrically connected to the drain thereof. Further, the gate side drive circuit 5
03 is a CMOS in which an n-channel TFT 513 and a p-channel TFT 514 are combined.
It is formed using a circuit.

These TFTs (including 511, 513, and 514) are the n-channel type T of Example 1 above.
What is necessary is just to produce according to FT and the p channel type TFT of the said Example 1.

Note that the pixel portion 502, the source side driver circuit 504, and the gate side driver circuit 503 are formed over the same substrate in accordance with Embodiment 1.

The pixel electrode 512 functions as a cathode of a light emitting element (OLED). In addition, the pixel electrode 512
Banks 515 are formed on both ends of the organic compound layer, and an organic compound layer 516 and an anode 517 of a light emitting element are formed on the pixel electrode 512.

As the organic compound layer 516, an organic compound layer (a layer for emitting light and moving carriers therefor) may be formed by freely combining a light-emitting layer, a charge transport layer, or a charge injection layer. For example, a low molecular organic compound material or a high molecular organic compound material may be used. As the organic compound layer 516, a thin film made of a light emitting material (singlet compound) that emits light (fluorescence) by singlet excitation or a thin film made of a light emitting material (phosphorescence) that emits light (phosphorescence) by triplet excitation can be used. it can. It is also possible to use an inorganic material such as silicon carbide for the charge transport layer or the charge injection layer. As these organic materials and inorganic materials, known materials can be used.

The anode 517 also functions as a wiring common to all pixels, and is connected to the FPC 5 via the connection wiring 508.
09 is electrically connected. Further, all elements included in the pixel portion 502 and the gate side driver circuit 503 are covered with an anode 517, an organic resin 518, and a protective film 519.

Note that as the organic resin 518, a material that is as transparent or translucent as possible to visible light is preferably used. The organic resin 518 is desirably a material that does not transmit moisture and oxygen as much as possible.

In addition, after completely covering the light emitting element with the organic resin 518, it is preferable to provide a protective film 519 on the surface (exposed surface) of the organic resin 518 at least as shown in FIG. Also,
A protective film may be provided on the entire surface including the back surface of the substrate 500. Here, external input terminal (FPC)
Care must be taken so that a protective film is not formed on the portion where the film is provided. The protective film may be prevented from being formed using a mask, or the protective film may not be formed by covering the external input terminal portion with a tape such as Teflon (registered trademark) used as a masking tape in a CVD apparatus. Also good. As the protective film 519, a silicon nitride film, a DLC film, or AlN _x O _y
A film may be used.

By encapsulating the light-emitting element with the protective film 519 with the above structure, the light-emitting element can be completely blocked from the outside, and a substance that promotes deterioration due to oxidation of the organic compound layer such as moisture or oxygen enters from the outside. Can be prevented. Therefore, a highly reliable light-emitting device can be obtained.

Further, the pixel electrode is used as a cathode, an organic compound layer, and a light-transmitting anode are stacked to form FIG.
It is good also as a structure which light-emits in the reverse direction. Alternatively, the pixel electrode may be an anode, and an organic compound layer and a cathode may be stacked to emit light in the direction opposite to that in FIG.
An example is shown in FIG. Since the top view is the same, it is omitted.

The cross-sectional structure shown in FIG. 15 will be described below. An insulating film 610 is provided over the substrate 600, and a pixel portion 602 and a gate side driver circuit 603 are formed above the insulating film 610. The pixel portion 602 is electrically connected to the current control TFT 611 and its drain. The pixel electrode 612 is formed by a plurality of pixels. The gate side driver circuit 603 is formed using a CMOS circuit in which an n-channel TFT 613 and a p-channel TFT 614 are combined.

These TFTs (including 611, 613, and 614) are the n-channel type T of Example 1 above.
What is necessary is just to produce according to FT and the p channel type TFT of the said Example 1.

The pixel electrode 612 functions as an anode of a light emitting element (OLED). In addition, the pixel electrode 612
Banks 615 are formed on both ends of the organic compound layer, and an organic compound layer 616 and a cathode 617 of a light emitting element are formed on the pixel electrode 612.

The cathode 617 also functions as a wiring common to all pixels, and is connected to the FPC 6 via the connection wiring 608.
09 is electrically connected. Further, all elements included in the pixel portion 602 and the gate side driver circuit 603 are covered with a cathode 617, an organic resin 618, and a protective film 619. Further, the cover material 620 may be bonded with an adhesive.
Further, the cover material 620 may be provided with a recess, and the desiccant 621 may be provided.

In FIG. 15, since the pixel electrode is the anode and the organic compound layer and the cathode are stacked, the light emission direction is the direction of the arrow shown in FIG.

Although the top gate type TFT has been described as an example here, the present invention can be applied regardless of the TFT structure. For example, it can be applied to a bottom gate type (reverse stagger type) TFT or a forward stagger type TFT. Is possible.

By implementing the present invention, a module having an OLED (active matrix type E
All electronic devices incorporating the L module are completed.

Such electronic devices include video cameras, digital cameras, head mounted displays (goggles type displays), car navigation systems, projectors, car stereos,
A personal computer, a portable information terminal (such as a mobile computer, a mobile phone, or an electronic book) can be used. Examples of these are shown in FIGS.

FIG. 16A illustrates a personal computer, which includes a main body 2001, an image input portion 2002, a display portion 2003, a keyboard 2004, and the like.

FIG. 16B illustrates a video camera, which includes a main body 2101, a display portion 2102, and an audio input portion 210.
3, an operation switch 2104, a battery 2105, an image receiving unit 2106, and the like.

FIG. 16C shows a mobile computer, which is a main body 2201.
A camera unit 2202, an image receiving unit 2203, an operation switch 2204, a display unit 2205, and the like are included.

FIG. 16D illustrates a goggle type display including a main body 2301, a display portion 2302, an arm portion 2303, and the like.

FIG. 16E shows a player using a recording medium (hereinafter referred to as a recording medium) on which a program is recorded.
Operation switch 2405 and the like are included. This player uses DVD (Dig as a recording medium).
(tial Versatile Disc), CD, etc. can be used for music appreciation, movie appreciation, games and the Internet.

FIG. 16F illustrates a digital camera, which includes a main body 2501, a display portion 2502, and an eyepiece portion 250.
3, an operation switch 2504, an image receiving unit (not shown), and the like.

FIG. 17A illustrates a mobile phone, which includes a main body 2901, an audio output unit 2902, and an audio input unit 29.
03, display unit 2904, operation switch 2905, antenna 2906, image input unit (CCD
2907 and the like.

FIG. 17B illustrates a portable book (electronic book), which includes a main body 3001 and display portions 3002 and 300.
3, a storage medium 3004, an operation switch 3005, an antenna 3006, and the like.

FIG. 17C illustrates a display, which includes a main body 3101, a support base 3102, and a display portion 3103.
Etc.

Incidentally, the display shown in FIG. 17C is a medium or small display, for example, 5 to 20
Inch screen size. Further, in order to form a display portion having such a size, it is preferable to use a substrate having a side of 1 m and perform mass production by performing multiple chamfering.

As described above, the applicable range of the present invention is so wide that it can be applied to manufacturing methods of electronic devices in various fields. Moreover, the electronic device of a present Example is realizable even if it uses the structure which consists of what kind of combination of Embodiment and Examples 1-3.

Claims (3)

A first transistor;
A second transistor;
A light emitting element,
One of a source and a drain of the first transistor is electrically connected to the first wiring;
A gate of the first transistor is electrically connected to a second wiring;
One of the source and the drain of the second transistor is electrically connected to the anode of the light emitting element,
The other of the source and the drain of the second transistor is electrically connected to a third wiring;
The channel formation region of the second transistor has a meandering shape,
The channel formation region of the second transistor has a laser crystallized region. A first transistor;
A second transistor;
A light emitting element,
One of a source and a drain of the first transistor is electrically connected to the first wiring;
A gate of the first transistor is electrically connected to a second wiring;
One of the source and the drain of the second transistor is electrically connected to the cathode of the light emitting element,
The other of the source and the drain of the second transistor is electrically connected to a third wiring;
The channel formation region of the second transistor has a meandering shape,
The channel formation region of the second transistor has a laser crystallized region. A first transistor;
A second transistor;
A light emitting element,
The channel formation region of the second transistor has a meandering shape,
The channel formation region of the second transistor has a laser crystallized region.

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