JPS534479A - Production of junction type field effect transistor - Google Patents

Production of junction type field effect transistor

Info

Publication number
JPS534479A
JPS534479A JP7787176A JP7787176A JPS534479A JP S534479 A JPS534479 A JP S534479A JP 7787176 A JP7787176 A JP 7787176A JP 7787176 A JP7787176 A JP 7787176A JP S534479 A JPS534479 A JP S534479A
Authority
JP
Japan
Prior art keywords
production
field effect
effect transistor
type field
junction type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7787176A
Other languages
Japanese (ja)
Inventor
Yoshiharu Kobayashi
Tetsushi Sakai
Yoshio Haruhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP7787176A priority Critical patent/JPS534479A/en
Publication of JPS534479A publication Critical patent/JPS534479A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To improve the operating characteristics in high frequency regions of both lateral channel J-FET and vertical channel J-FET by reducing the distance between the gate and source with the lateral channel J-FET and determining the source-to-gate spacing in a vertical direction by self-alignment with the vertical channel J-FET.
COPYRIGHT: (C)1978,JPO&Japio
JP7787176A 1976-07-02 1976-07-02 Production of junction type field effect transistor Pending JPS534479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7787176A JPS534479A (en) 1976-07-02 1976-07-02 Production of junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7787176A JPS534479A (en) 1976-07-02 1976-07-02 Production of junction type field effect transistor

Publications (1)

Publication Number Publication Date
JPS534479A true JPS534479A (en) 1978-01-17

Family

ID=13646108

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7787176A Pending JPS534479A (en) 1976-07-02 1976-07-02 Production of junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS534479A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5451383A (en) * 1977-09-30 1979-04-23 Oki Electric Ind Co Ltd Production of semiconductor element
JPS54131874A (en) * 1978-04-05 1979-10-13 Oki Electric Ind Co Ltd Manufacture of semiconductor element
JPS63180502U (en) * 1987-05-14 1988-11-22

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113581A (en) * 1974-07-24 1976-02-03 Hitachi Ltd DENKAIKOKATORANJISUTAOYOBISONO SEIHO

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113581A (en) * 1974-07-24 1976-02-03 Hitachi Ltd DENKAIKOKATORANJISUTAOYOBISONO SEIHO

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5451383A (en) * 1977-09-30 1979-04-23 Oki Electric Ind Co Ltd Production of semiconductor element
JPS5643656B2 (en) * 1977-09-30 1981-10-14
JPS54131874A (en) * 1978-04-05 1979-10-13 Oki Electric Ind Co Ltd Manufacture of semiconductor element
JPS5816614B2 (en) * 1978-04-05 1983-04-01 沖電気工業株式会社 Method for manufacturing semiconductor devices
JPS63180502U (en) * 1987-05-14 1988-11-22

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