JPS5354979A - Production of field effect transistor - Google Patents

Production of field effect transistor

Info

Publication number
JPS5354979A
JPS5354979A JP13066276A JP13066276A JPS5354979A JP S5354979 A JPS5354979 A JP S5354979A JP 13066276 A JP13066276 A JP 13066276A JP 13066276 A JP13066276 A JP 13066276A JP S5354979 A JPS5354979 A JP S5354979A
Authority
JP
Japan
Prior art keywords
production
field effect
effect transistor
gate
evaportating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13066276A
Other languages
Japanese (ja)
Other versions
JPS5639551B2 (en
Inventor
Masanori Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13066276A priority Critical patent/JPS5354979A/en
Publication of JPS5354979A publication Critical patent/JPS5354979A/en
Publication of JPS5639551B2 publication Critical patent/JPS5639551B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To increase dielectric strength by diagonally evaportating a gate electrode, offsetting it in a source electrode direction and increasing the distance between gate and drain.
COPYRIGHT: (C)1978,JPO&Japio
JP13066276A 1976-10-29 1976-10-29 Production of field effect transistor Granted JPS5354979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13066276A JPS5354979A (en) 1976-10-29 1976-10-29 Production of field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13066276A JPS5354979A (en) 1976-10-29 1976-10-29 Production of field effect transistor

Publications (2)

Publication Number Publication Date
JPS5354979A true JPS5354979A (en) 1978-05-18
JPS5639551B2 JPS5639551B2 (en) 1981-09-14

Family

ID=15039601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13066276A Granted JPS5354979A (en) 1976-10-29 1976-10-29 Production of field effect transistor

Country Status (1)

Country Link
JP (1) JPS5354979A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106082A (en) * 1980-12-23 1982-07-01 Nippon Telegr & Teleph Corp <Ntt> Manufacture of schottky junction type electric field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106082A (en) * 1980-12-23 1982-07-01 Nippon Telegr & Teleph Corp <Ntt> Manufacture of schottky junction type electric field effect transistor

Also Published As

Publication number Publication date
JPS5639551B2 (en) 1981-09-14

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