JPS5354979A - Production of field effect transistor - Google Patents
Production of field effect transistorInfo
- Publication number
- JPS5354979A JPS5354979A JP13066276A JP13066276A JPS5354979A JP S5354979 A JPS5354979 A JP S5354979A JP 13066276 A JP13066276 A JP 13066276A JP 13066276 A JP13066276 A JP 13066276A JP S5354979 A JPS5354979 A JP S5354979A
- Authority
- JP
- Japan
- Prior art keywords
- production
- field effect
- effect transistor
- gate
- evaportating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To increase dielectric strength by diagonally evaportating a gate electrode, offsetting it in a source electrode direction and increasing the distance between gate and drain.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13066276A JPS5354979A (en) | 1976-10-29 | 1976-10-29 | Production of field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13066276A JPS5354979A (en) | 1976-10-29 | 1976-10-29 | Production of field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5354979A true JPS5354979A (en) | 1978-05-18 |
JPS5639551B2 JPS5639551B2 (en) | 1981-09-14 |
Family
ID=15039601
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13066276A Granted JPS5354979A (en) | 1976-10-29 | 1976-10-29 | Production of field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5354979A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57106082A (en) * | 1980-12-23 | 1982-07-01 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of schottky junction type electric field effect transistor |
-
1976
- 1976-10-29 JP JP13066276A patent/JPS5354979A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57106082A (en) * | 1980-12-23 | 1982-07-01 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of schottky junction type electric field effect transistor |
Also Published As
Publication number | Publication date |
---|---|
JPS5639551B2 (en) | 1981-09-14 |
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