JPS5368986A - Mos type transistor - Google Patents

Mos type transistor

Info

Publication number
JPS5368986A
JPS5368986A JP14440976A JP14440976A JPS5368986A JP S5368986 A JPS5368986 A JP S5368986A JP 14440976 A JP14440976 A JP 14440976A JP 14440976 A JP14440976 A JP 14440976A JP S5368986 A JPS5368986 A JP S5368986A
Authority
JP
Japan
Prior art keywords
type transistor
mos type
insulator
laminating
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14440976A
Other languages
Japanese (ja)
Inventor
Toru Furuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14440976A priority Critical patent/JPS5368986A/en
Publication of JPS5368986A publication Critical patent/JPS5368986A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To increase switching speed while maintaining required transistor performances and reduce power consumption by dividing a gate electrode to a plurality and laminating the whole or part of these electrodes through an insulator.
COPYRIGHT: (C)1978,JPO&Japio
JP14440976A 1976-12-01 1976-12-01 Mos type transistor Pending JPS5368986A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14440976A JPS5368986A (en) 1976-12-01 1976-12-01 Mos type transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14440976A JPS5368986A (en) 1976-12-01 1976-12-01 Mos type transistor

Publications (1)

Publication Number Publication Date
JPS5368986A true JPS5368986A (en) 1978-06-19

Family

ID=15361490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14440976A Pending JPS5368986A (en) 1976-12-01 1976-12-01 Mos type transistor

Country Status (1)

Country Link
JP (1) JPS5368986A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586175A (en) * 1981-07-02 1983-01-13 Seiko Epson Corp Semiconductor device
US4651186A (en) * 1981-11-18 1987-03-17 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with improved withstand voltage characteristic
US5159417A (en) * 1990-04-16 1992-10-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having short channel field effect transistor with extended gate electrode structure and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586175A (en) * 1981-07-02 1983-01-13 Seiko Epson Corp Semiconductor device
US4651186A (en) * 1981-11-18 1987-03-17 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with improved withstand voltage characteristic
US5159417A (en) * 1990-04-16 1992-10-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having short channel field effect transistor with extended gate electrode structure and manufacturing method thereof

Similar Documents

Publication Publication Date Title
JPS52156576A (en) Production of mis semiconductor device
JPS535581A (en) Schottky gate type field effect transistor
JPS549544A (en) Mutual complement type insulation gate type electric field effect transistor circuit
JPS5366181A (en) High dielectric strength mis type transistor
JPS53121581A (en) Logical element of electrostatic inductive transistor
JPS51142983A (en) Scr
JPS5382179A (en) Field effect transistor
JPS5368986A (en) Mos type transistor
JPS51150284A (en) Semiconductor unvolatile memory unit
JPS5426646A (en) Current miller circuit
JPS5263074A (en) Insulated gate type field effect transistor and its production
JPS5273681A (en) Field effect transistor
JPS5269275A (en) Transistor
JPS538072A (en) Semiconductor device
JPS533074A (en) Production of schottkey barrier gate field effect transistor
JPS52127181A (en) Insulated gate type filed effect transistor
JPS5239382A (en) Gate control semiconductor element
JPS5320777A (en) Insulated gate field effect transistor
JPS5418687A (en) Insulating gate field effect transistor
JPS5347278A (en) Insulated gate type field effect transistor
JPS52100877A (en) Field effect transistor of junction type
JPS5378782A (en) Transmission characteristic variable mos semiconductor device
JPS5354485A (en) Mos type field effect transistor
JPS5371573A (en) Field effect transistor of isolating gate type
JPS535580A (en) Field effect type semiconductor device