JPS5368986A - Mos type transistor - Google Patents
Mos type transistorInfo
- Publication number
- JPS5368986A JPS5368986A JP14440976A JP14440976A JPS5368986A JP S5368986 A JPS5368986 A JP S5368986A JP 14440976 A JP14440976 A JP 14440976A JP 14440976 A JP14440976 A JP 14440976A JP S5368986 A JPS5368986 A JP S5368986A
- Authority
- JP
- Japan
- Prior art keywords
- type transistor
- mos type
- insulator
- laminating
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To increase switching speed while maintaining required transistor performances and reduce power consumption by dividing a gate electrode to a plurality and laminating the whole or part of these electrodes through an insulator.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14440976A JPS5368986A (en) | 1976-12-01 | 1976-12-01 | Mos type transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14440976A JPS5368986A (en) | 1976-12-01 | 1976-12-01 | Mos type transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5368986A true JPS5368986A (en) | 1978-06-19 |
Family
ID=15361490
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14440976A Pending JPS5368986A (en) | 1976-12-01 | 1976-12-01 | Mos type transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5368986A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS586175A (en) * | 1981-07-02 | 1983-01-13 | Seiko Epson Corp | Semiconductor device |
US4651186A (en) * | 1981-11-18 | 1987-03-17 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with improved withstand voltage characteristic |
US5159417A (en) * | 1990-04-16 | 1992-10-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having short channel field effect transistor with extended gate electrode structure and manufacturing method thereof |
-
1976
- 1976-12-01 JP JP14440976A patent/JPS5368986A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS586175A (en) * | 1981-07-02 | 1983-01-13 | Seiko Epson Corp | Semiconductor device |
US4651186A (en) * | 1981-11-18 | 1987-03-17 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with improved withstand voltage characteristic |
US5159417A (en) * | 1990-04-16 | 1992-10-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having short channel field effect transistor with extended gate electrode structure and manufacturing method thereof |
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