JPS5273681A - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- JPS5273681A JPS5273681A JP14991275A JP14991275A JPS5273681A JP S5273681 A JPS5273681 A JP S5273681A JP 14991275 A JP14991275 A JP 14991275A JP 14991275 A JP14991275 A JP 14991275A JP S5273681 A JPS5273681 A JP S5273681A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- increasing
- fet
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain an FET for large power by increasing its operating layer without increasing pinch-off voltage.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14991275A JPS5273681A (en) | 1975-12-16 | 1975-12-16 | Field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14991275A JPS5273681A (en) | 1975-12-16 | 1975-12-16 | Field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5273681A true JPS5273681A (en) | 1977-06-20 |
Family
ID=15485298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14991275A Pending JPS5273681A (en) | 1975-12-16 | 1975-12-16 | Field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5273681A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56133876A (en) * | 1980-03-24 | 1981-10-20 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of junction type field effect semiconductor device |
JPS56158469A (en) * | 1980-05-10 | 1981-12-07 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor logic device |
US4463366A (en) * | 1980-06-20 | 1984-07-31 | Nippon Telegraph & Telephone Public Corp. | Field effect transistor with combination Schottky-junction gate |
US4482907A (en) * | 1981-03-10 | 1984-11-13 | Thomson-Csf | Planar-type field-effect transistor having metallized-well electrodes and a method of fabrication of said transistor |
-
1975
- 1975-12-16 JP JP14991275A patent/JPS5273681A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56133876A (en) * | 1980-03-24 | 1981-10-20 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of junction type field effect semiconductor device |
JPS56158469A (en) * | 1980-05-10 | 1981-12-07 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor logic device |
US4463366A (en) * | 1980-06-20 | 1984-07-31 | Nippon Telegraph & Telephone Public Corp. | Field effect transistor with combination Schottky-junction gate |
US4482907A (en) * | 1981-03-10 | 1984-11-13 | Thomson-Csf | Planar-type field-effect transistor having metallized-well electrodes and a method of fabrication of said transistor |
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