JPS527658A - Biasing system for field effect power transistors - Google Patents

Biasing system for field effect power transistors

Info

Publication number
JPS527658A
JPS527658A JP8374475A JP8374475A JPS527658A JP S527658 A JPS527658 A JP S527658A JP 8374475 A JP8374475 A JP 8374475A JP 8374475 A JP8374475 A JP 8374475A JP S527658 A JPS527658 A JP S527658A
Authority
JP
Japan
Prior art keywords
field effect
power transistors
effect power
biasing system
biasing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8374475A
Other languages
Japanese (ja)
Inventor
Kenji Yokoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Gakki Co Ltd
Original Assignee
Nippon Gakki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Gakki Co Ltd filed Critical Nippon Gakki Co Ltd
Priority to JP8374475A priority Critical patent/JPS527658A/en
Priority to US05/632,899 priority patent/US4093925A/en
Priority to DE19762602966 priority patent/DE2602966C3/en
Publication of JPS527658A publication Critical patent/JPS527658A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To obtain a high power by using a drain-source voltage to a range where the voltage is in a positive region.
JP8374475A 1975-01-27 1975-07-08 Biasing system for field effect power transistors Pending JPS527658A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8374475A JPS527658A (en) 1975-07-08 1975-07-08 Biasing system for field effect power transistors
US05/632,899 US4093925A (en) 1975-01-27 1975-11-18 Method and system of driving power field effect transistor
DE19762602966 DE2602966C3 (en) 1975-01-27 1976-01-27 Low frequency power amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8374475A JPS527658A (en) 1975-07-08 1975-07-08 Biasing system for field effect power transistors

Publications (1)

Publication Number Publication Date
JPS527658A true JPS527658A (en) 1977-01-20

Family

ID=13811023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8374475A Pending JPS527658A (en) 1975-01-27 1975-07-08 Biasing system for field effect power transistors

Country Status (1)

Country Link
JP (1) JPS527658A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61196039A (en) * 1985-02-26 1986-08-30 玉寄 和雄 Joint material apparatus with water-proof material
JPH03154508A (en) * 1989-10-31 1991-07-02 Internatl Business Mach Corp <Ibm> Amplifier circuit and bias circuit thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61196039A (en) * 1985-02-26 1986-08-30 玉寄 和雄 Joint material apparatus with water-proof material
JPH03154508A (en) * 1989-10-31 1991-07-02 Internatl Business Mach Corp <Ibm> Amplifier circuit and bias circuit thereof

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