JPS56133876A - Manufacture of junction type field effect semiconductor device - Google Patents

Manufacture of junction type field effect semiconductor device

Info

Publication number
JPS56133876A
JPS56133876A JP3724680A JP3724680A JPS56133876A JP S56133876 A JPS56133876 A JP S56133876A JP 3724680 A JP3724680 A JP 3724680A JP 3724680 A JP3724680 A JP 3724680A JP S56133876 A JPS56133876 A JP S56133876A
Authority
JP
Japan
Prior art keywords
regions
region
semiconductor layer
conductive metal
metal layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3724680A
Other languages
Japanese (ja)
Inventor
Kazuyoshi Asai
Yasunobu Ishii
Katsuhiko Kurumada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3724680A priority Critical patent/JPS56133876A/en
Publication of JPS56133876A publication Critical patent/JPS56133876A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To improve the electrical characteristics of a junction type field effect semiconductor device by a method wherein the cross sectional area of the current path of the current flowing through a semiconductor layer is controlled by the depletion layer extending from the P-N junction to the semiconductor layer side. CONSTITUTION:Regions 17 and 18 under conductive metal layers 13 and 14 on a semiconductor layer 2 are used as a source region and a drain region respectively, portions between adjacent semiconductor regions 10 in the semiconductor layer 2 and regions 19 outside the semiconductor regions on the outside in the arrangement of a plurality of semiconductor regions 10 are used as current regions, and conductive metal layers 13, 14 and 9 as source, drain and gate electrodes respectively. With current flowing via the conductive metal layers 13 and 14 as the source and drain electrodes and through the region 19 as the current path region into the semiconductor layer 2, applying between the conductive metal layers 9 and 13 a control voltage of polarity opposite to a P-N junction 11 permits the cross sectional area of the path of the current flowing through the region 19 to be controlled.
JP3724680A 1980-03-24 1980-03-24 Manufacture of junction type field effect semiconductor device Pending JPS56133876A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3724680A JPS56133876A (en) 1980-03-24 1980-03-24 Manufacture of junction type field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3724680A JPS56133876A (en) 1980-03-24 1980-03-24 Manufacture of junction type field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS56133876A true JPS56133876A (en) 1981-10-20

Family

ID=12492264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3724680A Pending JPS56133876A (en) 1980-03-24 1980-03-24 Manufacture of junction type field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS56133876A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61181170A (en) * 1985-01-28 1986-08-13 アルカテル　イタリア　ソシエタ　ペル　アチオニ Mesfet transistor having air layer between a plurality of connections between gate electrode and substrate and manufacture thereof
US5006478A (en) * 1989-07-25 1991-04-09 Sony Corporation Method for manufacture of semiconductor device
JPH03232241A (en) * 1989-08-31 1991-10-16 Mitsubishi Electric Corp Semiconductor device and manufacture thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5219975A (en) * 1975-08-06 1977-02-15 Mitsubishi Electric Corp Semiconductor device
JPS5273681A (en) * 1975-12-16 1977-06-20 Toshiba Corp Field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5219975A (en) * 1975-08-06 1977-02-15 Mitsubishi Electric Corp Semiconductor device
JPS5273681A (en) * 1975-12-16 1977-06-20 Toshiba Corp Field effect transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61181170A (en) * 1985-01-28 1986-08-13 アルカテル　イタリア　ソシエタ　ペル　アチオニ Mesfet transistor having air layer between a plurality of connections between gate electrode and substrate and manufacture thereof
US5006478A (en) * 1989-07-25 1991-04-09 Sony Corporation Method for manufacture of semiconductor device
JPH03232241A (en) * 1989-08-31 1991-10-16 Mitsubishi Electric Corp Semiconductor device and manufacture thereof

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