JPS56157068A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS56157068A
JPS56157068A JP6113580A JP6113580A JPS56157068A JP S56157068 A JPS56157068 A JP S56157068A JP 6113580 A JP6113580 A JP 6113580A JP 6113580 A JP6113580 A JP 6113580A JP S56157068 A JPS56157068 A JP S56157068A
Authority
JP
Japan
Prior art keywords
semiconductor layer
semiconductor
region
layer
source electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6113580A
Other languages
Japanese (ja)
Inventor
Hiroaki Ando
Nobuhiko Susa
Yoshihisa Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6113580A priority Critical patent/JPS56157068A/en
Publication of JPS56157068A publication Critical patent/JPS56157068A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Abstract

PURPOSE:To obtain a satisfactory interface characteristic between a semiconductor layer and an insulation layer and to make the characteristic satisfactory by a method wherein a carrier mobility of the semiconductor forming a region, through which currents flow, is made adequate. CONSTITUTION:A deletion layer 40 can be obtained by applying a control voltage opposite in direction to a P-N junction 35 between a source electrode 31 and a gate electrode 38 with a load remaining connected between the source electrode 31 and a drain electrode 32 through a power source. Accordingly, the currents flowing to the region 33 of the semiconductor layer 23 through the source electrode 31 and the drain electrode 32 are controlled according to values of the control voltage. The carrier mobility of the semiconductor 23 forming the region 33 to which the currents flow is larger as compared with the semiconductor layer 25, and the satisfactory interface characteristic can be obtained between the semiconductor layer 25 and the insulation layer 28.
JP6113580A 1980-05-08 1980-05-08 Field effect transistor Pending JPS56157068A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6113580A JPS56157068A (en) 1980-05-08 1980-05-08 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6113580A JPS56157068A (en) 1980-05-08 1980-05-08 Field effect transistor

Publications (1)

Publication Number Publication Date
JPS56157068A true JPS56157068A (en) 1981-12-04

Family

ID=13162328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6113580A Pending JPS56157068A (en) 1980-05-08 1980-05-08 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS56157068A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58170070A (en) * 1982-03-31 1983-10-06 Nippon Telegr & Teleph Corp <Ntt> Field effect transistor
US4622610A (en) * 1982-01-08 1986-11-11 Mitsubishi Denki Kabushiki Kaisha Automatic cassette exchanging playback device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595370A (en) * 1979-01-10 1980-07-19 Nec Corp Compound semiconductor field-effect transistor
JPS55160473A (en) * 1979-03-28 1980-12-13 Thomson Csf Semiconductor device and method of fabricating same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595370A (en) * 1979-01-10 1980-07-19 Nec Corp Compound semiconductor field-effect transistor
JPS55160473A (en) * 1979-03-28 1980-12-13 Thomson Csf Semiconductor device and method of fabricating same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622610A (en) * 1982-01-08 1986-11-11 Mitsubishi Denki Kabushiki Kaisha Automatic cassette exchanging playback device
JPS58170070A (en) * 1982-03-31 1983-10-06 Nippon Telegr & Teleph Corp <Ntt> Field effect transistor

Similar Documents

Publication Publication Date Title
JPS5742164A (en) Semiconductor device
JPS56157068A (en) Field effect transistor
JPS5646562A (en) Semiconductor device
JPS56133876A (en) Manufacture of junction type field effect semiconductor device
JPS572574A (en) Insulated gate type field effect transistor
JPS554958A (en) Field-effect type switching element
JPS56165356A (en) Mos semiconductor device
JPS5662372A (en) Junction type field effect semiconductor device
JPS5562772A (en) Semiconductor device
JPS5524433A (en) Composite type semiconductor device
JPS5673468A (en) Mos type semiconductor device
JPS5541141A (en) Semiconductor rectification circuit
JPS6461059A (en) Semiconductor device
JPS53126283A (en) Semiconductor controlling rectifier
JPS57180170A (en) Semiconductor device and manufacture thereof
JPS54162485A (en) Semiconductor logic circuit device of electrostatic induction type
JPS57197869A (en) Semiconductor device
JPS55103772A (en) Semiconductor device
JPS57199268A (en) Junction type field effect transistor
JPS56135958A (en) Complementary insulation gate type field effect semiconductor device
JPS5734369A (en) Protective diode for insulated gate field-effect transistor
JPS5788773A (en) Semiconductor device
JPS56147467A (en) Cmos semiconductor device and manufacture thereof
JPS56138334A (en) Transistor logic circuit of insulation gate electrostatic induction
JPS57190365A (en) Junction type field effect transistor