JPS554958A - Field-effect type switching element - Google Patents

Field-effect type switching element

Info

Publication number
JPS554958A
JPS554958A JP7749378A JP7749378A JPS554958A JP S554958 A JPS554958 A JP S554958A JP 7749378 A JP7749378 A JP 7749378A JP 7749378 A JP7749378 A JP 7749378A JP S554958 A JPS554958 A JP S554958A
Authority
JP
Japan
Prior art keywords
layer
range
gate
cathode
base layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7749378A
Other languages
Japanese (ja)
Inventor
Kenji Miyata
Masahiro Okamura
Yoshio Terasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7749378A priority Critical patent/JPS554958A/en
Publication of JPS554958A publication Critical patent/JPS554958A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:For preventing the breakdown of this element, to uniform the loss of the heat generated in a gate layer on switch-off by providing a higher impurity concentration for the section, in the vicinity of the cathode layer, of a base layer than that the remainer sections. CONSTITUTION:A semiconductor substrate 1 consists of an anode layer 11, a base layer 12, a cathode layer 13 and a gate layer 4. Said gate layer 4 is buried in said base layer 12, and consists of a range 141 extending up to directly under said cathode layer 13 and a range 142 extending between said range 141 and the main surface 101 of either of semiconductors. Said base layer 12 consists of a range 121 on the anode layer 11 side of said range 141 of said gate layer 14, and a range 122 on the cathode layer 13 side of said range 141 which range 122 has a higher concentration than that of said range 121. The ratio between the areas S1 and S2 of the sections longitudinal of and orthogonal with said gate layer 14 and cathode layer 12 is equalized to that between the mean values IK and IG of the current flowing in a gate and cathode electrodes. Thereby, a highly reliable element suitable for high- frequency wave can be obtained.
JP7749378A 1978-06-28 1978-06-28 Field-effect type switching element Pending JPS554958A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7749378A JPS554958A (en) 1978-06-28 1978-06-28 Field-effect type switching element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7749378A JPS554958A (en) 1978-06-28 1978-06-28 Field-effect type switching element

Publications (1)

Publication Number Publication Date
JPS554958A true JPS554958A (en) 1980-01-14

Family

ID=13635503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7749378A Pending JPS554958A (en) 1978-06-28 1978-06-28 Field-effect type switching element

Country Status (1)

Country Link
JP (1) JPS554958A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59133789U (en) * 1983-02-26 1984-09-07 極東開発工業株式会社 Gear pump side bearing
JPS61276949A (en) * 1985-05-29 1986-12-06 Sumitomo Metal Ind Ltd Manufacture of sintered parts
US5087181A (en) * 1989-03-06 1992-02-11 Hitachi, Ltd. Sliding structure such as compressor or the like
JPH07253093A (en) * 1994-10-24 1995-10-03 Hitachi Ltd Compressor and its manufacture and its parts

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59133789U (en) * 1983-02-26 1984-09-07 極東開発工業株式会社 Gear pump side bearing
JPS61276949A (en) * 1985-05-29 1986-12-06 Sumitomo Metal Ind Ltd Manufacture of sintered parts
US5087181A (en) * 1989-03-06 1992-02-11 Hitachi, Ltd. Sliding structure such as compressor or the like
JPH07253093A (en) * 1994-10-24 1995-10-03 Hitachi Ltd Compressor and its manufacture and its parts

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