JPS5773979A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS5773979A
JPS5773979A JP15036280A JP15036280A JPS5773979A JP S5773979 A JPS5773979 A JP S5773979A JP 15036280 A JP15036280 A JP 15036280A JP 15036280 A JP15036280 A JP 15036280A JP S5773979 A JPS5773979 A JP S5773979A
Authority
JP
Japan
Prior art keywords
layer
type
semiconductor layer
gaas
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15036280A
Other languages
Japanese (ja)
Other versions
JPH0219623B2 (en
Inventor
Keiichi Ohata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15036280A priority Critical patent/JPS5773979A/en
Publication of JPS5773979A publication Critical patent/JPS5773979A/en
Publication of JPH0219623B2 publication Critical patent/JPH0219623B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Abstract

PURPOSE:To be adapted for the operation in a microwave for a field effect transistor formed with a P type first semiconductor layer and an N type second semiconductor layer on a high resistance substrate and a Schottky gate on the second layer by reducing the electron affinity of the second layer smaller than that of the first layer. CONSTITUTION:A P type GaAs first semiconductor layer 32 of approx. 1X10<15>/ cm<3> of effective acceptor density is grown on a semi-insulating GaAs substrate 31, and N type Ga0.7Al0.3As second semiconductor layer 34 having approx. 0.4eV of electron affinity of the difference between the free electron energy level in vacuum and the electron energy level of the conductive band than the GaAs is laminated on the layer 32. Subsequently, the layer 34 is formed in the predetermined pattern, a gate electrode 34 is mounted thereon, N or N<+> type region 37, 38 for reducing the contact resistance are respectively formed on the surface of the layer 32 disposed at each of both sides of the layer 34, and the source and drain electrodes 35, 36 are mounted. Thus, the layer 33 under the electrode 34 is all depleted.
JP15036280A 1980-10-27 1980-10-27 Field effect transistor Granted JPS5773979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15036280A JPS5773979A (en) 1980-10-27 1980-10-27 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15036280A JPS5773979A (en) 1980-10-27 1980-10-27 Field effect transistor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP63285123A Division JP2553673B2 (en) 1988-11-11 1988-11-11 Field effect transistor

Publications (2)

Publication Number Publication Date
JPS5773979A true JPS5773979A (en) 1982-05-08
JPH0219623B2 JPH0219623B2 (en) 1990-05-02

Family

ID=15495327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15036280A Granted JPS5773979A (en) 1980-10-27 1980-10-27 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS5773979A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58162070A (en) * 1982-03-19 1983-09-26 Matsushita Electric Ind Co Ltd Field effect transistor
JPS6030177A (en) * 1983-07-28 1985-02-15 Nec Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577165A (en) * 1980-06-17 1982-01-14 Fujitsu Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577165A (en) * 1980-06-17 1982-01-14 Fujitsu Ltd Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58162070A (en) * 1982-03-19 1983-09-26 Matsushita Electric Ind Co Ltd Field effect transistor
JPS6030177A (en) * 1983-07-28 1985-02-15 Nec Corp Semiconductor device
JPH0433132B2 (en) * 1983-07-28 1992-06-02 Nippon Electric Co

Also Published As

Publication number Publication date
JPH0219623B2 (en) 1990-05-02

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