JPS5736862A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5736862A
JPS5736862A JP11128880A JP11128880A JPS5736862A JP S5736862 A JPS5736862 A JP S5736862A JP 11128880 A JP11128880 A JP 11128880A JP 11128880 A JP11128880 A JP 11128880A JP S5736862 A JPS5736862 A JP S5736862A
Authority
JP
Japan
Prior art keywords
gate electrode
channel
type
temperature
type region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11128880A
Other languages
Japanese (ja)
Inventor
Kuniyasu Moriya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11128880A priority Critical patent/JPS5736862A/en
Publication of JPS5736862A publication Critical patent/JPS5736862A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the decrease in the responding characteristics of a semiconductor device due to the rise in the temperature by forming the first conductive type layer of high density in contact with the end of the gate electrode side of the second conductive type region formed at the gate electrode side of the second conductive type source and drain regions. CONSTITUTION:N type source and drain regions 12, 13 are fomred on a p type Si substrate 11, a field oxidized film 14 and a contacting hole 15 in the film 14 are then formed, gate oxidized film 16 and a gate electrode 17 are formed, boron ions are then injected to form a p<+> type region 20, and phosphorus ions are injected to form compensated N<+> type region 18 (19 is N-channel). In this manner, p<+> type layer 20 becomes barrier against the carrier (electron) of the N-channel, allowing the temperature dependency of the channel current of an MOSFET to be positive, and it can prevent the decrease in the responding characteristic due to the rise in the temperature.
JP11128880A 1980-08-13 1980-08-13 Semiconductor device Pending JPS5736862A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11128880A JPS5736862A (en) 1980-08-13 1980-08-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11128880A JPS5736862A (en) 1980-08-13 1980-08-13 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5736862A true JPS5736862A (en) 1982-02-27

Family

ID=14557418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11128880A Pending JPS5736862A (en) 1980-08-13 1980-08-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5736862A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5675166A (en) * 1995-07-07 1997-10-07 Motorola, Inc. FET with stable threshold voltage and method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5675166A (en) * 1995-07-07 1997-10-07 Motorola, Inc. FET with stable threshold voltage and method of manufacturing the same

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