JPS54116885A - Field effect transistor of insulation gate type and its manufacture - Google Patents
Field effect transistor of insulation gate type and its manufactureInfo
- Publication number
- JPS54116885A JPS54116885A JP2348578A JP2348578A JPS54116885A JP S54116885 A JPS54116885 A JP S54116885A JP 2348578 A JP2348578 A JP 2348578A JP 2348578 A JP2348578 A JP 2348578A JP S54116885 A JPS54116885 A JP S54116885A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- manufacture
- gate
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To increase a high current without a decrease in dielectric strength by making the gate film of a depletion region thicker than any other one by providing a resistance region to an offset part and by making uneven the threshold voltage of a channel under a gate electrode.
CONSTITUTION: To P-type Sil, N-type source and drain 2 and 3 are provided and then covered with gate oxidized film 9. Film 10 is a separating oxidized film. Next, layer 13 is formed by implanting phosphorus ions. Layer 13 is etched partially to form enhancement channel 12, which is covered with thermal oxidized film 82, so that high resistance layer 4 will be produced. Next, an electrode window is etched selectively and electrodes 5 to 7 are provided. By this method, the enhancement channel length depends upon the mask length for selective etching; the manufacture is simple, ON resistance is low, and mutual conductance is high, so that a high-output MOSFET can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2348578A JPS54116885A (en) | 1978-03-03 | 1978-03-03 | Field effect transistor of insulation gate type and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2348578A JPS54116885A (en) | 1978-03-03 | 1978-03-03 | Field effect transistor of insulation gate type and its manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54116885A true JPS54116885A (en) | 1979-09-11 |
JPS6252470B2 JPS6252470B2 (en) | 1987-11-05 |
Family
ID=12111819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2348578A Granted JPS54116885A (en) | 1978-03-03 | 1978-03-03 | Field effect transistor of insulation gate type and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54116885A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55150274A (en) * | 1979-05-10 | 1980-11-22 | Nec Corp | Insulated gate type field effect transistor |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010073991A1 (en) * | 2008-12-23 | 2010-07-01 | 三菱電機株式会社 | Semiconductor device and method for producing the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5011482A (en) * | 1973-06-04 | 1975-02-05 | ||
JPS50114182A (en) * | 1974-02-15 | 1975-09-06 | ||
JPS5295185A (en) * | 1976-02-06 | 1977-08-10 | Hitachi Ltd | Mis semiconductor unit |
-
1978
- 1978-03-03 JP JP2348578A patent/JPS54116885A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5011482A (en) * | 1973-06-04 | 1975-02-05 | ||
JPS50114182A (en) * | 1974-02-15 | 1975-09-06 | ||
JPS5295185A (en) * | 1976-02-06 | 1977-08-10 | Hitachi Ltd | Mis semiconductor unit |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55150274A (en) * | 1979-05-10 | 1980-11-22 | Nec Corp | Insulated gate type field effect transistor |
Also Published As
Publication number | Publication date |
---|---|
JPS6252470B2 (en) | 1987-11-05 |
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