JPS54116885A - Field effect transistor of insulation gate type and its manufacture - Google Patents

Field effect transistor of insulation gate type and its manufacture

Info

Publication number
JPS54116885A
JPS54116885A JP2348578A JP2348578A JPS54116885A JP S54116885 A JPS54116885 A JP S54116885A JP 2348578 A JP2348578 A JP 2348578A JP 2348578 A JP2348578 A JP 2348578A JP S54116885 A JPS54116885 A JP S54116885A
Authority
JP
Japan
Prior art keywords
film
layer
manufacture
gate
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2348578A
Other languages
Japanese (ja)
Other versions
JPS6252470B2 (en
Inventor
Isao Yoshida
Ken Yamaguchi
Takeaki Okabe
Toshiaki Masuhara
Yoshio Sakai
Mitsumasa Koyanagi
Shikayuki Ochi
Hideshi Ito
Minoru Nagata
Tetsukazu Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2348578A priority Critical patent/JPS54116885A/en
Publication of JPS54116885A publication Critical patent/JPS54116885A/en
Publication of JPS6252470B2 publication Critical patent/JPS6252470B2/ja
Granted legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To increase a high current without a decrease in dielectric strength by making the gate film of a depletion region thicker than any other one by providing a resistance region to an offset part and by making uneven the threshold voltage of a channel under a gate electrode.
CONSTITUTION: To P-type Sil, N-type source and drain 2 and 3 are provided and then covered with gate oxidized film 9. Film 10 is a separating oxidized film. Next, layer 13 is formed by implanting phosphorus ions. Layer 13 is etched partially to form enhancement channel 12, which is covered with thermal oxidized film 82, so that high resistance layer 4 will be produced. Next, an electrode window is etched selectively and electrodes 5 to 7 are provided. By this method, the enhancement channel length depends upon the mask length for selective etching; the manufacture is simple, ON resistance is low, and mutual conductance is high, so that a high-output MOSFET can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP2348578A 1978-03-03 1978-03-03 Field effect transistor of insulation gate type and its manufacture Granted JPS54116885A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2348578A JPS54116885A (en) 1978-03-03 1978-03-03 Field effect transistor of insulation gate type and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2348578A JPS54116885A (en) 1978-03-03 1978-03-03 Field effect transistor of insulation gate type and its manufacture

Publications (2)

Publication Number Publication Date
JPS54116885A true JPS54116885A (en) 1979-09-11
JPS6252470B2 JPS6252470B2 (en) 1987-11-05

Family

ID=12111819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2348578A Granted JPS54116885A (en) 1978-03-03 1978-03-03 Field effect transistor of insulation gate type and its manufacture

Country Status (1)

Country Link
JP (1) JPS54116885A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150274A (en) * 1979-05-10 1980-11-22 Nec Corp Insulated gate type field effect transistor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010073991A1 (en) * 2008-12-23 2010-07-01 三菱電機株式会社 Semiconductor device and method for producing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011482A (en) * 1973-06-04 1975-02-05
JPS50114182A (en) * 1974-02-15 1975-09-06
JPS5295185A (en) * 1976-02-06 1977-08-10 Hitachi Ltd Mis semiconductor unit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011482A (en) * 1973-06-04 1975-02-05
JPS50114182A (en) * 1974-02-15 1975-09-06
JPS5295185A (en) * 1976-02-06 1977-08-10 Hitachi Ltd Mis semiconductor unit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150274A (en) * 1979-05-10 1980-11-22 Nec Corp Insulated gate type field effect transistor

Also Published As

Publication number Publication date
JPS6252470B2 (en) 1987-11-05

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