JPS5295185A - Mis semiconductor unit - Google Patents

Mis semiconductor unit

Info

Publication number
JPS5295185A
JPS5295185A JP1146276A JP1146276A JPS5295185A JP S5295185 A JPS5295185 A JP S5295185A JP 1146276 A JP1146276 A JP 1146276A JP 1146276 A JP1146276 A JP 1146276A JP S5295185 A JPS5295185 A JP S5295185A
Authority
JP
Japan
Prior art keywords
semiconductor unit
mis semiconductor
mis
misic
mosic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1146276A
Other languages
Japanese (ja)
Inventor
Satoshi Meguro
Yasunobu Osa
Koichi Nagasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1146276A priority Critical patent/JPS5295185A/en
Publication of JPS5295185A publication Critical patent/JPS5295185A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain the semiconductor unit such as MISIC, C-MIS and high pressure-proof MIS transistor by using the manufacturing process of MOSIC in LOCOS structure.
JP1146276A 1976-02-06 1976-02-06 Mis semiconductor unit Pending JPS5295185A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1146276A JPS5295185A (en) 1976-02-06 1976-02-06 Mis semiconductor unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1146276A JPS5295185A (en) 1976-02-06 1976-02-06 Mis semiconductor unit

Publications (1)

Publication Number Publication Date
JPS5295185A true JPS5295185A (en) 1977-08-10

Family

ID=11778749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1146276A Pending JPS5295185A (en) 1976-02-06 1976-02-06 Mis semiconductor unit

Country Status (1)

Country Link
JP (1) JPS5295185A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54116885A (en) * 1978-03-03 1979-09-11 Hitachi Ltd Field effect transistor of insulation gate type and its manufacture
JPS54121681A (en) * 1978-03-15 1979-09-20 Hitachi Ltd Nis-type semiconductor device
US6169311B1 (en) 1997-10-27 2001-01-02 Nec Corporation Semiconductor integrated circuit having an input and output protective circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509379A (en) * 1973-05-23 1975-01-30

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509379A (en) * 1973-05-23 1975-01-30

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54116885A (en) * 1978-03-03 1979-09-11 Hitachi Ltd Field effect transistor of insulation gate type and its manufacture
JPS6252470B2 (en) * 1978-03-03 1987-11-05 Hitachi Ltd
JPS54121681A (en) * 1978-03-15 1979-09-20 Hitachi Ltd Nis-type semiconductor device
US6169311B1 (en) 1997-10-27 2001-01-02 Nec Corporation Semiconductor integrated circuit having an input and output protective circuit

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