JPS53114355A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS53114355A
JPS53114355A JP2797877A JP2797877A JPS53114355A JP S53114355 A JPS53114355 A JP S53114355A JP 2797877 A JP2797877 A JP 2797877A JP 2797877 A JP2797877 A JP 2797877A JP S53114355 A JPS53114355 A JP S53114355A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
halogenide
less
sio2 film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2797877A
Other languages
Japanese (ja)
Other versions
JPS6032974B2 (en
Inventor
Yuji Tanida
Tetsukazu Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2797877A priority Critical patent/JPS6032974B2/en
Publication of JPS53114355A publication Critical patent/JPS53114355A/en
Publication of JPS6032974B2 publication Critical patent/JPS6032974B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To make flattening process at less than 1000 deg.C possible, by adding Ge to the SiO2 film which contains P, B, As and halogenide.
JP2797877A 1977-03-16 1977-03-16 Manufacturing method of semiconductor device Expired JPS6032974B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2797877A JPS6032974B2 (en) 1977-03-16 1977-03-16 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2797877A JPS6032974B2 (en) 1977-03-16 1977-03-16 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS53114355A true JPS53114355A (en) 1978-10-05
JPS6032974B2 JPS6032974B2 (en) 1985-07-31

Family

ID=12235939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2797877A Expired JPS6032974B2 (en) 1977-03-16 1977-03-16 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6032974B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5784147A (en) * 1980-11-13 1982-05-26 Seiko Epson Corp Manufacture of integrated circuit
JPS57128944A (en) * 1981-02-03 1982-08-10 Nec Corp Maufacture of semiconductor device
EP0060205A2 (en) * 1981-03-16 1982-09-15 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Low temperature melting binary glasses for leveling surfaces of integrated circuits containing isolation grooves
EP0084985A2 (en) * 1982-01-15 1983-08-03 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Laser induced flow Ge-O based materials
JPS60246642A (en) * 1984-01-18 1985-12-06 ブリテイシユ・テレコミユニケ−シヨンズ・パブリツク・リミテツド・カンパニ Method of forming dielectric film, method of forming semiconductor element and semiconductor wafer as well as semiconductor element
US4630343A (en) * 1981-03-16 1986-12-23 Fairchild Camera & Instrument Corp. Product for making isolated semiconductor structure

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5784147A (en) * 1980-11-13 1982-05-26 Seiko Epson Corp Manufacture of integrated circuit
JPS57128944A (en) * 1981-02-03 1982-08-10 Nec Corp Maufacture of semiconductor device
JPS6217863B2 (en) * 1981-02-03 1987-04-20 Nippon Electric Co
EP0060205A2 (en) * 1981-03-16 1982-09-15 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Low temperature melting binary glasses for leveling surfaces of integrated circuits containing isolation grooves
JPS57162348A (en) * 1981-03-16 1982-10-06 Fairchild Camera Instr Co Low melting temperature two-dimensional glass for smoothing surface of integrated circuit with isolating groove
US4630343A (en) * 1981-03-16 1986-12-23 Fairchild Camera & Instrument Corp. Product for making isolated semiconductor structure
EP0084985A2 (en) * 1982-01-15 1983-08-03 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Laser induced flow Ge-O based materials
EP0084985A3 (en) * 1982-01-15 1986-08-20 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Laser induced flow ge-o based materials
JPS60246642A (en) * 1984-01-18 1985-12-06 ブリテイシユ・テレコミユニケ−シヨンズ・パブリツク・リミテツド・カンパニ Method of forming dielectric film, method of forming semiconductor element and semiconductor wafer as well as semiconductor element

Also Published As

Publication number Publication date
JPS6032974B2 (en) 1985-07-31

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