JPS5784147A - Manufacture of integrated circuit - Google Patents

Manufacture of integrated circuit

Info

Publication number
JPS5784147A
JPS5784147A JP15995780A JP15995780A JPS5784147A JP S5784147 A JPS5784147 A JP S5784147A JP 15995780 A JP15995780 A JP 15995780A JP 15995780 A JP15995780 A JP 15995780A JP S5784147 A JPS5784147 A JP S5784147A
Authority
JP
Japan
Prior art keywords
oxide film
diffused
region
field oxide
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15995780A
Other languages
Japanese (ja)
Inventor
Nobuyuki Miyazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP15995780A priority Critical patent/JPS5784147A/en
Publication of JPS5784147A publication Critical patent/JPS5784147A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Abstract

PURPOSE:To eliminate unevenness of a field oxide film and to prevent generation of crack and disconnection of wiring of an integrated circuit by a method wherein the progress of work to etch a silicon substrate, and the progress of work to make the field oxide film to flow are introduced. CONSTITUTION:After the silicon substrate 202 is etched, selective diffusion is performed to form a region 302 being diffused with boron in low concentration, a region 301 being diffused with phosphorus in high concentration, and a region 303 being diffused with boron in high concentration making an oxide film as a mask. Then the field oxide film 401 is formed by the chemical vapor phase growth method, and is made to flow at a high temperature to form plane structure. Then openings for the contact part and the gate part are formed, followed by the formation of a gate oxide film 602, Al wirings 701, and a gate electrode 702.
JP15995780A 1980-11-13 1980-11-13 Manufacture of integrated circuit Pending JPS5784147A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15995780A JPS5784147A (en) 1980-11-13 1980-11-13 Manufacture of integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15995780A JPS5784147A (en) 1980-11-13 1980-11-13 Manufacture of integrated circuit

Publications (1)

Publication Number Publication Date
JPS5784147A true JPS5784147A (en) 1982-05-26

Family

ID=15704859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15995780A Pending JPS5784147A (en) 1980-11-13 1980-11-13 Manufacture of integrated circuit

Country Status (1)

Country Link
JP (1) JPS5784147A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02160726A (en) * 1982-09-02 1990-06-20 Unilever Nv Vaccine

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51146192A (en) * 1975-06-11 1976-12-15 Fujitsu Ltd Diode device fabrication method
JPS53114355A (en) * 1977-03-16 1978-10-05 Hitachi Ltd Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51146192A (en) * 1975-06-11 1976-12-15 Fujitsu Ltd Diode device fabrication method
JPS53114355A (en) * 1977-03-16 1978-10-05 Hitachi Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02160726A (en) * 1982-09-02 1990-06-20 Unilever Nv Vaccine

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