JPS5726171A - Dry etching method for molybdenum - Google Patents

Dry etching method for molybdenum

Info

Publication number
JPS5726171A
JPS5726171A JP10149580A JP10149580A JPS5726171A JP S5726171 A JPS5726171 A JP S5726171A JP 10149580 A JP10149580 A JP 10149580A JP 10149580 A JP10149580 A JP 10149580A JP S5726171 A JPS5726171 A JP S5726171A
Authority
JP
Japan
Prior art keywords
molybdenum
ccl4
oxygen
etched
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10149580A
Other languages
Japanese (ja)
Inventor
Kazuo Kamimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10149580A priority Critical patent/JPS5726171A/en
Publication of JPS5726171A publication Critical patent/JPS5726171A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To increase the molybdenum etching speed to a practical level by exposing a molybdenum surface to be etched to plasma of a mixed gas of CCl4 and oxygen. CONSTITUTION:For example, when a semiconductor device having direct contact is manufactured using molybdenum as a gate 13 of a field effect type transistor, the molybdenum surface is exposed to plasma of a mixed gas of CCl4 and oxygen. The amount of CCl4 mixed with oxygen is adjusted to about 10-30%. As a result, the molybdenum 13 alone is etched selectively, and silicon oxide 12 under the molybdenum 13 and substrate silicon 11 of the direct contact part are not etched. Thus, the molybdenum 13 alone can be worked into an arbitrary shape.
JP10149580A 1980-07-24 1980-07-24 Dry etching method for molybdenum Pending JPS5726171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10149580A JPS5726171A (en) 1980-07-24 1980-07-24 Dry etching method for molybdenum

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10149580A JPS5726171A (en) 1980-07-24 1980-07-24 Dry etching method for molybdenum

Publications (1)

Publication Number Publication Date
JPS5726171A true JPS5726171A (en) 1982-02-12

Family

ID=14302233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10149580A Pending JPS5726171A (en) 1980-07-24 1980-07-24 Dry etching method for molybdenum

Country Status (1)

Country Link
JP (1) JPS5726171A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878427A (en) * 1981-11-05 1983-05-12 Toshiba Corp Dry etching method
JPH01205825A (en) * 1988-02-12 1989-08-18 Dai Ichi High Frequency Co Ltd Bending method for thin metallic bar such as u-shape steel

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5325244A (en) * 1976-08-20 1978-03-08 Nichiden Varian Kk Method of plasma etching molybdenum
JPS5569264A (en) * 1978-11-15 1980-05-24 Toshiba Corp Etching method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5325244A (en) * 1976-08-20 1978-03-08 Nichiden Varian Kk Method of plasma etching molybdenum
JPS5569264A (en) * 1978-11-15 1980-05-24 Toshiba Corp Etching method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878427A (en) * 1981-11-05 1983-05-12 Toshiba Corp Dry etching method
JPH0312454B2 (en) * 1981-11-05 1991-02-20 Tokyo Shibaura Electric Co
JPH01205825A (en) * 1988-02-12 1989-08-18 Dai Ichi High Frequency Co Ltd Bending method for thin metallic bar such as u-shape steel

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