JPS56158452A - Formation of pattern of electrode and wiring for semiconductor device - Google Patents

Formation of pattern of electrode and wiring for semiconductor device

Info

Publication number
JPS56158452A
JPS56158452A JP6430180A JP6430180A JPS56158452A JP S56158452 A JPS56158452 A JP S56158452A JP 6430180 A JP6430180 A JP 6430180A JP 6430180 A JP6430180 A JP 6430180A JP S56158452 A JPS56158452 A JP S56158452A
Authority
JP
Japan
Prior art keywords
pattern
layer
gas
electrode
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6430180A
Other languages
Japanese (ja)
Inventor
Teruhiko Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6430180A priority Critical patent/JPS56158452A/en
Publication of JPS56158452A publication Critical patent/JPS56158452A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To remove an oxide film generated naturally on an Al layer, to reduce decomposition of a photo sensing resin and to obtain a minute Al pattern in a short time when the electrode, wiring pattern of the semiconductor device is to be formed by a method wherein reducing gas is added in gas plasma when the Al layer is to be etched. CONSTITUTION:When the Al layer is to be etched, the composition ratio of gas to be used is made as CCl4:CO=85:15. The other condition is favorable as usual. By this constitution, CO in the gas plasma reacts on Al2O3 to perform reducing action, and etching by Cl ion and Al is advanced in succession. Because the rise time of etching is abridged to shorten the time on the whole, and the decomposition of the photo sensing resin is reduced by this reducing reaction, the minute pattern can be formed.
JP6430180A 1980-05-12 1980-05-12 Formation of pattern of electrode and wiring for semiconductor device Pending JPS56158452A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6430180A JPS56158452A (en) 1980-05-12 1980-05-12 Formation of pattern of electrode and wiring for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6430180A JPS56158452A (en) 1980-05-12 1980-05-12 Formation of pattern of electrode and wiring for semiconductor device

Publications (1)

Publication Number Publication Date
JPS56158452A true JPS56158452A (en) 1981-12-07

Family

ID=13254283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6430180A Pending JPS56158452A (en) 1980-05-12 1980-05-12 Formation of pattern of electrode and wiring for semiconductor device

Country Status (1)

Country Link
JP (1) JPS56158452A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302236A (en) * 1990-10-19 1994-04-12 Tokyo Electron Limited Method of etching object to be processed including oxide or nitride portion

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302236A (en) * 1990-10-19 1994-04-12 Tokyo Electron Limited Method of etching object to be processed including oxide or nitride portion

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