JPS56158452A - Formation of pattern of electrode and wiring for semiconductor device - Google Patents
Formation of pattern of electrode and wiring for semiconductor deviceInfo
- Publication number
- JPS56158452A JPS56158452A JP6430180A JP6430180A JPS56158452A JP S56158452 A JPS56158452 A JP S56158452A JP 6430180 A JP6430180 A JP 6430180A JP 6430180 A JP6430180 A JP 6430180A JP S56158452 A JPS56158452 A JP S56158452A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- layer
- gas
- electrode
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To remove an oxide film generated naturally on an Al layer, to reduce decomposition of a photo sensing resin and to obtain a minute Al pattern in a short time when the electrode, wiring pattern of the semiconductor device is to be formed by a method wherein reducing gas is added in gas plasma when the Al layer is to be etched. CONSTITUTION:When the Al layer is to be etched, the composition ratio of gas to be used is made as CCl4:CO=85:15. The other condition is favorable as usual. By this constitution, CO in the gas plasma reacts on Al2O3 to perform reducing action, and etching by Cl ion and Al is advanced in succession. Because the rise time of etching is abridged to shorten the time on the whole, and the decomposition of the photo sensing resin is reduced by this reducing reaction, the minute pattern can be formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6430180A JPS56158452A (en) | 1980-05-12 | 1980-05-12 | Formation of pattern of electrode and wiring for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6430180A JPS56158452A (en) | 1980-05-12 | 1980-05-12 | Formation of pattern of electrode and wiring for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56158452A true JPS56158452A (en) | 1981-12-07 |
Family
ID=13254283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6430180A Pending JPS56158452A (en) | 1980-05-12 | 1980-05-12 | Formation of pattern of electrode and wiring for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56158452A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5302236A (en) * | 1990-10-19 | 1994-04-12 | Tokyo Electron Limited | Method of etching object to be processed including oxide or nitride portion |
-
1980
- 1980-05-12 JP JP6430180A patent/JPS56158452A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5302236A (en) * | 1990-10-19 | 1994-04-12 | Tokyo Electron Limited | Method of etching object to be processed including oxide or nitride portion |
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