JPS5240978A - Process for production of semiconductor device - Google Patents
Process for production of semiconductor deviceInfo
- Publication number
- JPS5240978A JPS5240978A JP11596475A JP11596475A JPS5240978A JP S5240978 A JPS5240978 A JP S5240978A JP 11596475 A JP11596475 A JP 11596475A JP 11596475 A JP11596475 A JP 11596475A JP S5240978 A JPS5240978 A JP S5240978A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- film
- tapers
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To control tapers of the etched portions of an SiO2 film by the combination use of plasma dry etching and chemical etching, thereby preventing disconnection of metal wiring evaporated over the film.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11596475A JPS5240978A (en) | 1975-09-27 | 1975-09-27 | Process for production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11596475A JPS5240978A (en) | 1975-09-27 | 1975-09-27 | Process for production of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5240978A true JPS5240978A (en) | 1977-03-30 |
JPS5540180B2 JPS5540180B2 (en) | 1980-10-16 |
Family
ID=14675486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11596475A Granted JPS5240978A (en) | 1975-09-27 | 1975-09-27 | Process for production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5240978A (en) |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55150231A (en) * | 1979-05-14 | 1980-11-22 | Hitachi Ltd | Opening method of insulating film |
JPS5612770A (en) * | 1979-07-11 | 1981-02-07 | Hitachi Ltd | Semiconductor device and its manufacturing device |
JPS5690525A (en) * | 1979-11-28 | 1981-07-22 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5735317A (en) * | 1980-08-13 | 1982-02-25 | Nec Kyushu Ltd | Semiconductor device |
JPS57170535A (en) * | 1981-04-15 | 1982-10-20 | Toshiba Corp | Etching method for thin silicon film |
JPS57190332A (en) * | 1981-05-19 | 1982-11-22 | Seiko Epson Corp | Manufacture of semiconductor device |
JPS57198646A (en) * | 1981-06-01 | 1982-12-06 | Seiko Epson Corp | Manufacture of semiconductor device |
JPS57199223A (en) * | 1981-06-01 | 1982-12-07 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS58127328A (en) * | 1982-01-26 | 1983-07-29 | Seiko Epson Corp | Etching method for insulating protection film of semiconductor substrate |
JPS5913334A (en) * | 1982-07-01 | 1984-01-24 | コミツサレ・ア・レナジイ・アトミツク | Method of producing oxidized film of integrated circuit |
JPS59189626A (en) * | 1983-04-13 | 1984-10-27 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPS60160126A (en) * | 1984-01-30 | 1985-08-21 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS60247926A (en) * | 1984-04-23 | 1985-12-07 | ゼネラル・エレクトリツク・カンパニイ | Taper dry etching method |
JPS6297332A (en) * | 1986-10-24 | 1987-05-06 | Matsushita Electric Ind Co Ltd | Etching method |
JPS63100780A (en) * | 1986-10-17 | 1988-05-02 | Fuji Electric Co Ltd | Manufacture of pressure sensor |
JPS63205916A (en) * | 1987-02-23 | 1988-08-25 | Nippon Denso Co Ltd | Etching method |
JPS63237527A (en) * | 1987-03-26 | 1988-10-04 | Hoya Corp | Resist peeling method |
US5354716A (en) * | 1990-05-02 | 1994-10-11 | Nec Electronics, Inc. | Method for forming a DRAM memory cell with tapered capacitor electrodes |
-
1975
- 1975-09-27 JP JP11596475A patent/JPS5240978A/en active Granted
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0127573B2 (en) * | 1979-05-14 | 1989-05-30 | Hitachi Ltd | |
JPS55150231A (en) * | 1979-05-14 | 1980-11-22 | Hitachi Ltd | Opening method of insulating film |
JPS5612770A (en) * | 1979-07-11 | 1981-02-07 | Hitachi Ltd | Semiconductor device and its manufacturing device |
JPS5690525A (en) * | 1979-11-28 | 1981-07-22 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0135495B2 (en) * | 1979-11-28 | 1989-07-25 | Fujitsu Ltd | |
JPS5735317A (en) * | 1980-08-13 | 1982-02-25 | Nec Kyushu Ltd | Semiconductor device |
JPS57170535A (en) * | 1981-04-15 | 1982-10-20 | Toshiba Corp | Etching method for thin silicon film |
JPS57190332A (en) * | 1981-05-19 | 1982-11-22 | Seiko Epson Corp | Manufacture of semiconductor device |
JPS57198646A (en) * | 1981-06-01 | 1982-12-06 | Seiko Epson Corp | Manufacture of semiconductor device |
JPS57199223A (en) * | 1981-06-01 | 1982-12-07 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS58127328A (en) * | 1982-01-26 | 1983-07-29 | Seiko Epson Corp | Etching method for insulating protection film of semiconductor substrate |
JPS5913334A (en) * | 1982-07-01 | 1984-01-24 | コミツサレ・ア・レナジイ・アトミツク | Method of producing oxidized film of integrated circuit |
JPS59189626A (en) * | 1983-04-13 | 1984-10-27 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPH0563935B2 (en) * | 1983-04-13 | 1993-09-13 | Matsushita Electronics Corp | |
JPS60160126A (en) * | 1984-01-30 | 1985-08-21 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS60247926A (en) * | 1984-04-23 | 1985-12-07 | ゼネラル・エレクトリツク・カンパニイ | Taper dry etching method |
JPS63100780A (en) * | 1986-10-17 | 1988-05-02 | Fuji Electric Co Ltd | Manufacture of pressure sensor |
JPH0573276B2 (en) * | 1986-10-17 | 1993-10-14 | Fuji Electric Co Ltd | |
JPS6297332A (en) * | 1986-10-24 | 1987-05-06 | Matsushita Electric Ind Co Ltd | Etching method |
JPH0257701B2 (en) * | 1986-10-24 | 1990-12-05 | Matsushita Electric Ind Co Ltd | |
JPS63205916A (en) * | 1987-02-23 | 1988-08-25 | Nippon Denso Co Ltd | Etching method |
JPS63237527A (en) * | 1987-03-26 | 1988-10-04 | Hoya Corp | Resist peeling method |
US5354716A (en) * | 1990-05-02 | 1994-10-11 | Nec Electronics, Inc. | Method for forming a DRAM memory cell with tapered capacitor electrodes |
Also Published As
Publication number | Publication date |
---|---|
JPS5540180B2 (en) | 1980-10-16 |
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