JPS5240978A - Process for production of semiconductor device - Google Patents

Process for production of semiconductor device

Info

Publication number
JPS5240978A
JPS5240978A JP11596475A JP11596475A JPS5240978A JP S5240978 A JPS5240978 A JP S5240978A JP 11596475 A JP11596475 A JP 11596475A JP 11596475 A JP11596475 A JP 11596475A JP S5240978 A JPS5240978 A JP S5240978A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
film
tapers
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11596475A
Other languages
Japanese (ja)
Other versions
JPS5540180B2 (en
Inventor
Kenji Sugishima
Satoshi Suda
Shuji Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11596475A priority Critical patent/JPS5240978A/en
Publication of JPS5240978A publication Critical patent/JPS5240978A/en
Publication of JPS5540180B2 publication Critical patent/JPS5540180B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To control tapers of the etched portions of an SiO2 film by the combination use of plasma dry etching and chemical etching, thereby preventing disconnection of metal wiring evaporated over the film.
COPYRIGHT: (C)1977,JPO&Japio
JP11596475A 1975-09-27 1975-09-27 Process for production of semiconductor device Granted JPS5240978A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11596475A JPS5240978A (en) 1975-09-27 1975-09-27 Process for production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11596475A JPS5240978A (en) 1975-09-27 1975-09-27 Process for production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5240978A true JPS5240978A (en) 1977-03-30
JPS5540180B2 JPS5540180B2 (en) 1980-10-16

Family

ID=14675486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11596475A Granted JPS5240978A (en) 1975-09-27 1975-09-27 Process for production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5240978A (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150231A (en) * 1979-05-14 1980-11-22 Hitachi Ltd Opening method of insulating film
JPS5612770A (en) * 1979-07-11 1981-02-07 Hitachi Ltd Semiconductor device and its manufacturing device
JPS5690525A (en) * 1979-11-28 1981-07-22 Fujitsu Ltd Manufacture of semiconductor device
JPS5735317A (en) * 1980-08-13 1982-02-25 Nec Kyushu Ltd Semiconductor device
JPS57170535A (en) * 1981-04-15 1982-10-20 Toshiba Corp Etching method for thin silicon film
JPS57190332A (en) * 1981-05-19 1982-11-22 Seiko Epson Corp Manufacture of semiconductor device
JPS57198646A (en) * 1981-06-01 1982-12-06 Seiko Epson Corp Manufacture of semiconductor device
JPS57199223A (en) * 1981-06-01 1982-12-07 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS58127328A (en) * 1982-01-26 1983-07-29 Seiko Epson Corp Etching method for insulating protection film of semiconductor substrate
JPS5913334A (en) * 1982-07-01 1984-01-24 コミツサレ・ア・レナジイ・アトミツク Method of producing oxidized film of integrated circuit
JPS59189626A (en) * 1983-04-13 1984-10-27 Matsushita Electronics Corp Manufacture of semiconductor device
JPS60160126A (en) * 1984-01-30 1985-08-21 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS60247926A (en) * 1984-04-23 1985-12-07 ゼネラル・エレクトリツク・カンパニイ Taper dry etching method
JPS6297332A (en) * 1986-10-24 1987-05-06 Matsushita Electric Ind Co Ltd Etching method
JPS63100780A (en) * 1986-10-17 1988-05-02 Fuji Electric Co Ltd Manufacture of pressure sensor
JPS63205916A (en) * 1987-02-23 1988-08-25 Nippon Denso Co Ltd Etching method
JPS63237527A (en) * 1987-03-26 1988-10-04 Hoya Corp Resist peeling method
US5354716A (en) * 1990-05-02 1994-10-11 Nec Electronics, Inc. Method for forming a DRAM memory cell with tapered capacitor electrodes

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0127573B2 (en) * 1979-05-14 1989-05-30 Hitachi Ltd
JPS55150231A (en) * 1979-05-14 1980-11-22 Hitachi Ltd Opening method of insulating film
JPS5612770A (en) * 1979-07-11 1981-02-07 Hitachi Ltd Semiconductor device and its manufacturing device
JPS5690525A (en) * 1979-11-28 1981-07-22 Fujitsu Ltd Manufacture of semiconductor device
JPH0135495B2 (en) * 1979-11-28 1989-07-25 Fujitsu Ltd
JPS5735317A (en) * 1980-08-13 1982-02-25 Nec Kyushu Ltd Semiconductor device
JPS57170535A (en) * 1981-04-15 1982-10-20 Toshiba Corp Etching method for thin silicon film
JPS57190332A (en) * 1981-05-19 1982-11-22 Seiko Epson Corp Manufacture of semiconductor device
JPS57198646A (en) * 1981-06-01 1982-12-06 Seiko Epson Corp Manufacture of semiconductor device
JPS57199223A (en) * 1981-06-01 1982-12-07 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS58127328A (en) * 1982-01-26 1983-07-29 Seiko Epson Corp Etching method for insulating protection film of semiconductor substrate
JPS5913334A (en) * 1982-07-01 1984-01-24 コミツサレ・ア・レナジイ・アトミツク Method of producing oxidized film of integrated circuit
JPS59189626A (en) * 1983-04-13 1984-10-27 Matsushita Electronics Corp Manufacture of semiconductor device
JPH0563935B2 (en) * 1983-04-13 1993-09-13 Matsushita Electronics Corp
JPS60160126A (en) * 1984-01-30 1985-08-21 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS60247926A (en) * 1984-04-23 1985-12-07 ゼネラル・エレクトリツク・カンパニイ Taper dry etching method
JPS63100780A (en) * 1986-10-17 1988-05-02 Fuji Electric Co Ltd Manufacture of pressure sensor
JPH0573276B2 (en) * 1986-10-17 1993-10-14 Fuji Electric Co Ltd
JPS6297332A (en) * 1986-10-24 1987-05-06 Matsushita Electric Ind Co Ltd Etching method
JPH0257701B2 (en) * 1986-10-24 1990-12-05 Matsushita Electric Ind Co Ltd
JPS63205916A (en) * 1987-02-23 1988-08-25 Nippon Denso Co Ltd Etching method
JPS63237527A (en) * 1987-03-26 1988-10-04 Hoya Corp Resist peeling method
US5354716A (en) * 1990-05-02 1994-10-11 Nec Electronics, Inc. Method for forming a DRAM memory cell with tapered capacitor electrodes

Also Published As

Publication number Publication date
JPS5540180B2 (en) 1980-10-16

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