JPS5396673A - Gas plasma etching method for sio2 film - Google Patents

Gas plasma etching method for sio2 film

Info

Publication number
JPS5396673A
JPS5396673A JP1106277A JP1106277A JPS5396673A JP S5396673 A JPS5396673 A JP S5396673A JP 1106277 A JP1106277 A JP 1106277A JP 1106277 A JP1106277 A JP 1106277A JP S5396673 A JPS5396673 A JP S5396673A
Authority
JP
Japan
Prior art keywords
plasma etching
etching method
gas plasma
sio2 film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1106277A
Other languages
Japanese (ja)
Inventor
Fumio Yamagishi
Yuji Kimura
Kenzo Yanagida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1106277A priority Critical patent/JPS5396673A/en
Publication of JPS5396673A publication Critical patent/JPS5396673A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To realize the gas plasma etching method which is able of not only processing a large amount of wafers simultaneously, but also preventing the etching of a SiO2 film from reaching the Si substrate.
COPYRIGHT: (C)1978,JPO&Japio
JP1106277A 1977-02-03 1977-02-03 Gas plasma etching method for sio2 film Pending JPS5396673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1106277A JPS5396673A (en) 1977-02-03 1977-02-03 Gas plasma etching method for sio2 film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1106277A JPS5396673A (en) 1977-02-03 1977-02-03 Gas plasma etching method for sio2 film

Publications (1)

Publication Number Publication Date
JPS5396673A true JPS5396673A (en) 1978-08-24

Family

ID=11767506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1106277A Pending JPS5396673A (en) 1977-02-03 1977-02-03 Gas plasma etching method for sio2 film

Country Status (1)

Country Link
JP (1) JPS5396673A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58170018A (en) * 1982-03-31 1983-10-06 Fujitsu Ltd Dry etching method
JPS6243132A (en) * 1985-08-20 1987-02-25 Sharp Corp Plasma treatment method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58170018A (en) * 1982-03-31 1983-10-06 Fujitsu Ltd Dry etching method
JPS6243132A (en) * 1985-08-20 1987-02-25 Sharp Corp Plasma treatment method

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