JPS5396673A - Gas plasma etching method for sio2 film - Google Patents
Gas plasma etching method for sio2 filmInfo
- Publication number
- JPS5396673A JPS5396673A JP1106277A JP1106277A JPS5396673A JP S5396673 A JPS5396673 A JP S5396673A JP 1106277 A JP1106277 A JP 1106277A JP 1106277 A JP1106277 A JP 1106277A JP S5396673 A JPS5396673 A JP S5396673A
- Authority
- JP
- Japan
- Prior art keywords
- plasma etching
- etching method
- gas plasma
- sio2 film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To realize the gas plasma etching method which is able of not only processing a large amount of wafers simultaneously, but also preventing the etching of a SiO2 film from reaching the Si substrate.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1106277A JPS5396673A (en) | 1977-02-03 | 1977-02-03 | Gas plasma etching method for sio2 film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1106277A JPS5396673A (en) | 1977-02-03 | 1977-02-03 | Gas plasma etching method for sio2 film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5396673A true JPS5396673A (en) | 1978-08-24 |
Family
ID=11767506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1106277A Pending JPS5396673A (en) | 1977-02-03 | 1977-02-03 | Gas plasma etching method for sio2 film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5396673A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58170018A (en) * | 1982-03-31 | 1983-10-06 | Fujitsu Ltd | Dry etching method |
JPS6243132A (en) * | 1985-08-20 | 1987-02-25 | Sharp Corp | Plasma treatment method |
-
1977
- 1977-02-03 JP JP1106277A patent/JPS5396673A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58170018A (en) * | 1982-03-31 | 1983-10-06 | Fujitsu Ltd | Dry etching method |
JPS6243132A (en) * | 1985-08-20 | 1987-02-25 | Sharp Corp | Plasma treatment method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5351970A (en) | Manufacture for semiconductor substrate | |
JPS53108390A (en) | Semiconductor device and its manufacture | |
JPS5240978A (en) | Process for production of semiconductor device | |
JPS53110374A (en) | Manufacture of semiconductor device | |
JPS5396673A (en) | Gas plasma etching method for sio2 film | |
JPS542070A (en) | Manufacture for semiconductor element | |
JPS51136289A (en) | Semi-conductor producing | |
JPS5248468A (en) | Process for production of semiconductor device | |
JPS543473A (en) | Manufacture of semiconductor device | |
JPS52127761A (en) | Gas plasma etching unit | |
JPS54591A (en) | Element isolating method | |
JPS5242365A (en) | Tool for semiconductors | |
JPS5421173A (en) | Manufacture for semiconductor having oxide film | |
JPS543470A (en) | Etching method | |
JPS52122479A (en) | Etching solution of silicon | |
JPS5352368A (en) | Quartz tube for furnace | |
JPS54162490A (en) | Manufacture of semiconductor device | |
JPS53136967A (en) | Dry etching method for silicon oxide film on silicon substrate | |
JPS54116882A (en) | Manufacture of semiconductor device | |
JPS5386577A (en) | Production of semiconductor device | |
JPS51124379A (en) | Plasma etching method | |
JPS57177525A (en) | Etching method for silicon oxide | |
JPS5227368A (en) | Selection etching method | |
JPS5314555A (en) | Depositing method of impurity to silicon wafersa | |
JPS52127765A (en) | Plasma etching method |