JPS54591A - Element isolating method - Google Patents
Element isolating methodInfo
- Publication number
- JPS54591A JPS54591A JP6482477A JP6482477A JPS54591A JP S54591 A JPS54591 A JP S54591A JP 6482477 A JP6482477 A JP 6482477A JP 6482477 A JP6482477 A JP 6482477A JP S54591 A JPS54591 A JP S54591A
- Authority
- JP
- Japan
- Prior art keywords
- element isolating
- isolating method
- burying
- sio
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To obtain isolating regions of good flatness by providing holes of a depth sufficient for interelement isolation within a semiconductor substrate from the substrate surface and burying here with SiO2, Si3N4, Al2O3 or other by using a laser beam or ion beam vapor deposition or a plasma chemical transport method.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6482477A JPS54591A (en) | 1977-06-03 | 1977-06-03 | Element isolating method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6482477A JPS54591A (en) | 1977-06-03 | 1977-06-03 | Element isolating method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54591A true JPS54591A (en) | 1979-01-05 |
Family
ID=13269377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6482477A Pending JPS54591A (en) | 1977-06-03 | 1977-06-03 | Element isolating method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54591A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57176742A (en) * | 1981-04-21 | 1982-10-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and manufacture thereof |
JPS57202755A (en) * | 1982-04-12 | 1982-12-11 | Toshiba Corp | Manufacture of semiconductor device |
JPS58202546A (en) * | 1982-05-21 | 1983-11-25 | Mitsubishi Electric Corp | Formation of element isolation film |
JPS59117234A (en) * | 1982-12-24 | 1984-07-06 | Mitsubishi Electric Corp | Formation of isolation film between elements |
-
1977
- 1977-06-03 JP JP6482477A patent/JPS54591A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57176742A (en) * | 1981-04-21 | 1982-10-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and manufacture thereof |
JPS6322463B2 (en) * | 1981-04-21 | 1988-05-12 | Nippon Telegraph & Telephone | |
JPS57202755A (en) * | 1982-04-12 | 1982-12-11 | Toshiba Corp | Manufacture of semiconductor device |
JPS58202546A (en) * | 1982-05-21 | 1983-11-25 | Mitsubishi Electric Corp | Formation of element isolation film |
JPS59117234A (en) * | 1982-12-24 | 1984-07-06 | Mitsubishi Electric Corp | Formation of isolation film between elements |
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