JPS63237527A - Resist peeling method - Google Patents
Resist peeling methodInfo
- Publication number
- JPS63237527A JPS63237527A JP7269187A JP7269187A JPS63237527A JP S63237527 A JPS63237527 A JP S63237527A JP 7269187 A JP7269187 A JP 7269187A JP 7269187 A JP7269187 A JP 7269187A JP S63237527 A JPS63237527 A JP S63237527A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- light
- pattern
- screening
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000001301 oxygen Substances 0.000 claims abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 9
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000010894 electron beam technology Methods 0.000 abstract description 16
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 3
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 abstract description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052804 chromium Inorganic materials 0.000 abstract description 2
- 239000011651 chromium Substances 0.000 abstract description 2
- 238000012216 screening Methods 0.000 abstract 9
- 238000007598 dipping method Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 19
- 239000007788 liquid Substances 0.000 description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 1
- OUCNSFUASBNULY-UHFFFAOYSA-O [NH4+].[K].[O-][N+]([O-])=O Chemical compound [NH4+].[K].[O-][N+]([O-])=O OUCNSFUASBNULY-UHFFFAOYSA-O 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、基板上に被着されたレジストを剥離する方法
に係り、例えば、レジストパターンを剥離する工程を有
してフォトマスクを製造する場合に採用して好適なレジ
スト剥離方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for peeling off a resist deposited on a substrate, and includes, for example, a process of peeling off a resist pattern to manufacture a photomask. The present invention relates to a resist stripping method suitable for use in certain cases.
以下、従来のレジスト剥離方法についてフォトマスクを
製造する場合を例に挙げ説明する。Hereinafter, a conventional resist stripping method will be described using an example of manufacturing a photomask.
先ず、透光性基板の一生表面上に遮光性膜を被着してな
るフォトマスクブランクを容易し、次にその遮光性股上
に電子線レジストを塗布する。次に、電子線露光装置を
用い所定の露光用パターンデータに基づいて、電子線に
より電子線レジストを選択的に露光し、次に電子線レジ
ストを現像処理してレジストパターンを形成する。次に
、エツチング液により遮光性膜を選択的にエツチングし
て、遮光性パターンを透光性基板の一生表面」二に形成
し、遮光性パターン付ぎ基板を得る。なお、このとき遮
光性パターン上には前記したレジストパターンが被着し
ている。First, a photomask blank is prepared by coating a light-shielding film on the entire surface of a light-transmitting substrate, and then an electron beam resist is applied to the light-shielding crotch. Next, the electron beam resist is selectively exposed to an electron beam using an electron beam exposure apparatus based on predetermined exposure pattern data, and then the electron beam resist is developed to form a resist pattern. Next, the light-shielding film is selectively etched with an etching solution to form a light-shielding pattern on the entire surface of the light-transmitting substrate, thereby obtaining a substrate with a light-shielding pattern. Note that at this time, the above-mentioned resist pattern is deposited on the light-shielding pattern.
次に、前記した遮光性パターン付き基板を過酸化水素中
に浸漬し、続いて高温（例えば１００℃）の硫酸からな
るレジスト剥離液中に浸ｔｉｌｔ ［、Ｉて、遮光性パ
ターン上のレジストパターンを剥離し、透光性基板の一
生表面にに遮光性パターンをτ、■備してなるフォトマ
スクを製造している。Next, the substrate with the light-shielding pattern described above is immersed in hydrogen peroxide, and then immersed in a resist stripping solution made of sulfuric acid at a high temperature (for example, 100°C) to remove the resist pattern on the light-shielding pattern. A photomask is manufactured by peeling off the light-transmitting substrate and providing a light-shielding pattern on the surface of the light-transmitting substrate.
（発明が解決しようとする問題点）
しかしながら、上記したように高温（例えば１００℃）
のｌｉｉ！ｉ Ｍからなるレジスト剥離液を用いてレジ
ストパターンを剥離した場合、以下に記ずようｔｒ問題
点が発生する。(Problem to be solved by the invention) However, as mentioned above, high temperatures (e.g. 100°C)
Nolii! When a resist pattern is removed using a resist removal solution made of iM, the following tr problem occurs.
ずなわら、レジスト剥１ｌｌＩｌ液の液温が高いと、遮
光性パターン上のレジストパターンが剥離されるのみな
らず、透光性基板の一生表面上の遮光性パターンの一部
も剥離されてしまったり、遮光性パターンの表面部分が
レジスト剥離液中に溶解してしまったりして、所望の遮
光性パターンを形成することが困難となる。However, if the temperature of the resist stripping solution is high, not only will the resist pattern on the light-shielding pattern be peeled off, but a portion of the light-shielding pattern on the surface of the light-transmitting substrate will also be peeled off. Otherwise, the surface portion of the light-shielding pattern may dissolve in the resist stripping solution, making it difficult to form a desired light-shielding pattern.
本発明は、以上のような事情を鑑みてなされたものであ
り、低い液温のレジスト剥離液を用いてレジストを確実
に剥離りることができる方法を提供することを目的とす
る。The present invention has been made in view of the above-mentioned circumstances, and an object of the present invention is to provide a method that can reliably remove a resist using a resist removing liquid having a low liquid temperature.
（問題点を解決するための手段）
本発明は、上記した目的を達成するためになされたもの
であり、レジストを被着した基板の前記レジストに対し
、酸素またはオゾンを含有してなる雰囲気下で紫外線を
照射した優、所定のレジスト剥離液中に前記基板をｖＩ
ｋ潰して前記レジストを剥離することを特徴とするレジ
スト剥離方法である。(Means for Solving the Problems) The present invention has been made to achieve the above-mentioned object, and the present invention has been made in order to achieve the above-mentioned object. After irradiating the substrate with ultraviolet rays, the substrate is placed in a predetermined resist stripping solution.
This is a resist peeling method characterized by peeling off the resist by crushing it.
なお、ここで、レジスＩ−としては、パターン化された
レジスト（すなわち、レジストパターン）を含む。Note that here, the resist I- includes a patterned resist (that is, a resist pattern).
〔作 用）
酸素またはオゾンを含有してなる雰ｍ１気下で紫外線を
照射されたレジストは、レジスト刹固波によって剥離さ
れ易くなる。[Function] A resist irradiated with ultraviolet rays in an atmosphere containing oxygen or ozone is likely to be peeled off due to resist solidification waves.
また、ｗｉ累を含有してなる雰囲気下′Ｃ−紫外線を照
射すると、その酸素を含有してなる雰囲気を構成するｍ
素はオゾンになる。In addition, when irradiating ultraviolet rays under an atmosphere containing oxygen, the atmosphere containing oxygen is
The element becomes ozone.
（実施例）
以下、本発明の実施例によるレジスト剥離方法について
、フォトマスクを製造する場合を例に挙げ詳細に説明す
る。(Example) Hereinafter, a resist stripping method according to an example of the present invention will be described in detail, taking as an example the case of manufacturing a photomask.
先ず、石英ガラスからなる透光性基板（寸法：５ｘ５Ｘ
０．０９インチ）の−１表面上に、クロムからなる遮光
性膜（膜厚：９００人）を被着して製造されたフォトマ
スクブランクを用意する。First, a transparent substrate made of quartz glass (dimensions: 5x5x
A photomask blank manufactured by depositing a light-shielding film (thickness: 900 mm) made of chromium on the -1 surface of the photomask (0.09 inch) is prepared.
次に、そのフォトマスクブランクの遮光性股上にスピン
コード法によりネガ型電子線レジスト（例：東洋曹達工
業ｌｌ製）ＣＨ３−［Ｘ、 膜厚： ４Ｇ００人）を塗
布する。Next, a negative electron beam resist (eg, manufactured by Toyo Soda Kogyo Ill., CH3-[X, film thickness: 4G00) is applied to the light-shielding crotch of the photomask blank by a spin code method.
続いて、電子線露光装置（例：パーキン・エル７−社製
のＨ［ＢＥＳ−１１１”）を用い所定の露光用パターン
データに基づいて、電子線によりネガ型電子線レジスト
を選択的に露光する。Next, the negative electron beam resist is selectively exposed to an electron beam using an electron beam exposure device (e.g., Perkin L7-H [BES-111'') based on predetermined exposure pattern data. do.
次に、所定の現像液（例： ＣＨ３専用現像液）により
ネガ型電子線レジストを現像して、遮光性膜上にレジス
トパターンを形成する。Next, the negative electron beam resist is developed using a predetermined developer (eg, a CH3 exclusive developer) to form a resist pattern on the light-shielding film.
次に、エツチング液（例：硝酸第２１？リウムアンモニ
ウムと過塩素酸とを混合してなる水溶液）により遮光性
膜を選択的にエツチングして、遮光性パターンを透光性
基板の一生表面上に形成し、遮光性パターン付き基板を
得る。このとき、遮光性パターン上には前記したレジス
トパターンが被むしている。Next, the light-shielding film is selectively etched with an etching solution (e.g., an aqueous solution made by mixing dillium ammonium nitrate and perchloric acid) to form a light-shielding pattern on the surface of the light-transmitting substrate. A substrate with a light-shielding pattern is obtained. At this time, the above-described resist pattern covers the light-shielding pattern.
次に、レジストパターンに紫外線を照ＯＮる工程を行う
。ずなわら、酸素（０２）を含有して（する雰囲気下で
、波ｉ １８４．９ｎｓ及び２５３．７ｎｍの紫外線を
発生する低圧水銀ランプを用い、紫外線強度２、５４
１１１Ｗ／ｃｄで所定時間（例：１０分間）Ｌｚレジス
トパターン前記波長の紫外線を照射１Ｊる。Next, a step of irradiating the resist pattern with ultraviolet light is performed. Using a low-pressure mercury lamp that generates ultraviolet rays with a wave i of 184.9 ns and 253.7 nm in an atmosphere containing oxygen (02), the ultraviolet intensity was 2.54 nm.
The Lz resist pattern is irradiated with ultraviolet rays of the above wavelength at 111 W/cd for a predetermined time (eg, 10 minutes) for 1 J.
次に、前記した遮光性パターン付さ・基板を過酸化水素
水（液温：２１℃）中に所定時間（例：１分間）浸漬し
、次に１ｉＩＩＩ酸からなるレジスト剥離液（液温：８
０℃）中に所定時間（例：５分間）浸漬して、遮光性パ
ターン上のレジストパターンを剥離し、透光性基板の一
生表面上に遮光性パターンを具備してなるフォトマスク
をｙＪ造した。Next, the substrate with the light-shielding pattern described above is immersed in a hydrogen peroxide solution (liquid temperature: 21°C) for a predetermined time (e.g., 1 minute), and then a resist stripping solution consisting of 1iIII acid (liquid temperature: 8
0°C) for a predetermined period of time (e.g. 5 minutes) to peel off the resist pattern on the light-shielding pattern, producing a photomask with a light-shielding pattern on the surface of the light-transmitting substrate. did.
以上のようにして製造したフォトマスクを光学式顕微鏡
を用いて観察したところ、透光性基板の一生表面上及び
遮光性パターン上にレジストが残存することなく剥１１
１ｉされ、また遮光性パターンの一部が剥離したり、遮
光性パターンの表面部分がレジスト剥離液中に溶解り′
ることら防止されて、所望の遮光性パターンを形成する
ことができた。When the photomask manufactured as described above was observed using an optical microscope, it was found that the resist did not remain on the surface of the light-transmitting substrate or on the light-shielding pattern during the entire life of the light-transmitting substrate.
1i, part of the light-shielding pattern may peel off, or the surface portion of the light-shielding pattern may dissolve in the resist stripping solution.
It was possible to form a desired light-shielding pattern.
なお、比較例として、前記した遮光性パターン付き基板
のレジストパターンに紫外線を照射する工程を経ずにフ
ォトマスクを製造した。この場合には、遮光性パターン
付き基板を上記したと同様に過酸化水素水中に浸漬した
後、硫酸からなるレジスト剥離液〈液ｉ：１００°Ｃ）
中に所定時間（８分間）浸漬して、遮光性パターン上の
レジストパターンを剥離する。このようにして製造した
フォトマスクを光学式顕微Ｉｎを用いて観察し！ことこ
ろ、透光性基板の一生表面上及び遮光性パターン上のレ
ジストは残存することなく剥離されたが、遮光性パター
ンの一部が剥離したり、遮光性パターンの表面部分がレ
ジスト剥離液中に溶解したりして、所望の遮光性パター
ンを形成することができなかった。As a comparative example, a photomask was manufactured without going through the step of irradiating the resist pattern of the light-shielding patterned substrate with ultraviolet rays. In this case, after immersing the light-shielding patterned substrate in hydrogen peroxide water in the same manner as described above, use a resist stripping solution consisting of sulfuric acid (Liquid I: 100°C).
The photoresist pattern on the light-shielding pattern is peeled off by immersion in the liquid for a predetermined time (8 minutes). Observe the photomask manufactured in this way using an optical microscope In! In fact, the resist on the surface of the light-transmitting substrate and on the light-shielding pattern was removed without any residue remaining, but some parts of the light-shielding pattern were peeled off, and the surface portion of the light-shielding pattern was exposed to the resist stripping solution. The desired light-shielding pattern could not be formed.
以上のように、本実施例のレジスト剥離方法によれば、
低い液温のレジスト剥離液を用いて短時間でレジストを
残存することなく剥離でき、また所望の遮光性パターン
を確実に形成して゛ノオトマスクを製造することができ
る。As described above, according to the resist stripping method of this example,
The resist can be removed in a short time without leaving any residue using a resist removing solution at a low liquid temperature, and a desired light-shielding pattern can be reliably formed to produce a digital mask.
本発明は、上記した実施例に限定されるものではない。The present invention is not limited to the embodiments described above.
上記実施例中では、酸素を含有してなる雰囲気下で波長
１８４．９ｎｍ及び２５３．γｎｍの紫外線を発生づる
低圧水銀ランプを用い、レジストパターンに紫外線を照
射したが、オゾン（０３）を含イｊしてなる雰囲気下で
波長２５３．７ｎｍの紫外線をレジストパターンに照射
してもよい。さらに、酸素とオゾンとを含有してなる雰
囲気下で、前記した低圧水銀ランプを用いレジストパタ
ーンに紫外線を照射してもよい。In the above example, wavelengths of 184.9 nm and 253.9 nm were used in an oxygen-containing atmosphere. Although the resist pattern was irradiated with ultraviolet rays using a low-pressure mercury lamp that generates γnm ultraviolet rays, the resist pattern may also be irradiated with ultraviolet rays with a wavelength of 253.7 nm in an atmosphere containing ozone (03). . Further, the resist pattern may be irradiated with ultraviolet rays using the aforementioned low-pressure mercury lamp in an atmosphere containing oxygen and ozone.
また、酸素を含有してなる雰囲気下でレジストパターン
に照射する紫外線は、１８４．９ｎｍ及び２５３、７ｎ
ｍの三波長を有するものに限定されるものではｌｚい。In addition, the ultraviolet rays irradiated onto the resist pattern in an atmosphere containing oxygen are 184.9 nm and 253, 7 nm.
However, it is not limited to those having three wavelengths of m.
しかし、レジストの剥離を容易にするためには、前記三
波長と実質的に同一の三波長を有する紫外線を照射する
ことが望ましい。また、紫外線強度及び紫外線を照射す
る時間も、上記実施例中に記したものに限定されず適宜
選定されうる。However, in order to facilitate the removal of the resist, it is desirable to irradiate ultraviolet rays having three wavelengths that are substantially the same as the above three wavelengths. Furthermore, the intensity of the ultraviolet rays and the time for irradiating the ultraviolet rays are not limited to those described in the above embodiments, and may be appropriately selected.
また、過酸化水素水や、硫酸からなるレジスト剥離液の
液温、及び浸漬時間は上記実施例中に記したものに限定
されず、それぞれ適宜選定してよい。また、レジスト剥
離液としては、硫酸と過酸化水素水とを混合してなる溶
液や、硫酸と硝酸カリウムアンモニウムとを混合してな
る溶液を用いてもよく、また硫酸以外の他の酸溶液等か
らなるものを用いてもよい。さらに、上記した遮光性パ
ターン付き基板を過酸化水素水中に浸漬する工程は省略
してもよい。Furthermore, the temperature of the hydrogen peroxide solution and the resist stripping solution made of sulfuric acid, and the immersion time are not limited to those described in the above embodiments, and may be selected as appropriate. In addition, as the resist stripping solution, a solution made by mixing sulfuric acid and hydrogen peroxide solution, a solution made by mixing sulfuric acid and potassium ammonium nitrate, or a solution made from other acid solutions other than sulfuric acid may be used. You may use something like that. Furthermore, the step of immersing the above-described light-shielding patterned substrate in hydrogen peroxide water may be omitted.
剥離するレジストパターンはネガ型電子線レジストから
なるもの以外に、ポジ型電子線レジストやネガ型及びポ
ジ型フォトレジストからなるものであってもよい。さら
に、剥離するレジストとしては、露光・現像工程を経て
パターン化されたレジスト（レジストパターン）以外に
、前記各工程を経ずパターン化されていないレジストで
あってもよい。すなわち、遮光性股上に塗布したレジス
トをパターン化する前に、そのレジストを剥離する必要
が生じた場合に紫外線を照ｒ）Ｊづ゛る工程を実施し、
レジストを剥離してもよい。The resist pattern to be peeled off may be made of a positive electron beam resist or a negative and positive photoresist in addition to a negative electron beam resist. Furthermore, the resist to be peeled off may be a resist that has not been patterned through the above-mentioned steps, in addition to a resist that has been patterned through an exposure/development process (resist pattern). That is, before patterning the resist applied to the light-shielding crotch, if it becomes necessary to peel off the resist, a step of exposing it to ultraviolet rays is carried out,
The resist may be peeled off.
ざらに、レジストを被着した基板としては、上記実施例
中に記したような遮光性パターン付き基板以外に、酸化
シリコン膜パターン付きシリコンウェハ等であってもよ
い。さらに基板としては、シリコンやセラミックやガラ
ス等からなり、その主表面上に遮光性パターンあるいは
酸化シリコン膜パターン等のパターンを有しないもので
あってもよい。In general, the substrate coated with the resist may be a silicon wafer with a silicon oxide film pattern, etc., in addition to the substrate with a light-shielding pattern as described in the above embodiments. Furthermore, the substrate may be made of silicon, ceramic, glass, or the like, and may not have a pattern such as a light-shielding pattern or a silicon oxide film pattern on its main surface.
本発明のレジスト剥離方法によれば、低い液温のレジス
ｉ・剥離液を用いて短い時間でレジストを確実に剥離す
ることができる。According to the resist stripping method of the present invention, the resist can be reliably stripped in a short time using a resist i stripping solution having a low liquid temperature.
Claims (1)
中に浸漬して前記レジストを剥離する方法において、酸
素またはオゾンを含有してなる雰囲気下で前記レジスト
に紫外線を照射した後、前記基板を前記剥離液中に浸漬
することを特徴とするレジスト剥離方法。(1) In a method in which a substrate coated with a resist is immersed in a predetermined resist stripping solution to strip the resist, the resist is irradiated with ultraviolet rays in an atmosphere containing oxygen or ozone, and then the substrate A resist stripping method characterized by immersing the resist in the stripping solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7269187A JPS63237527A (en) | 1987-03-26 | 1987-03-26 | Resist peeling method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7269187A JPS63237527A (en) | 1987-03-26 | 1987-03-26 | Resist peeling method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63237527A true JPS63237527A (en) | 1988-10-04 |
Family
ID=13496642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7269187A Pending JPS63237527A (en) | 1987-03-26 | 1987-03-26 | Resist peeling method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63237527A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6123865A (en) * | 1998-09-09 | 2000-09-26 | Promos Technologies, Inc. | Method for improving etch uniformity during a wet etching process |
| JP2010021335A (en) * | 2008-07-10 | 2010-01-28 | Shibaura Mechatronics Corp | Substrate treating apparatus and substrate treatment method |
| JP2013150007A (en) * | 2013-04-17 | 2013-08-01 | Shibaura Mechatronics Corp | Substrate processing apparatus |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5240978A (en) * | 1975-09-27 | 1977-03-30 | Fujitsu Ltd | Process for production of semiconductor device |
| JPS54163034A (en) * | 1978-06-14 | 1979-12-25 | Seiko Epson Corp | Removing method of resist |
| JPS58182827A (en) * | 1982-04-21 | 1983-10-25 | Toshiba Corp | Resist exfoliating method |
| JPS6235520A (en) * | 1985-08-08 | 1987-02-16 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1987
- 1987-03-26 JP JP7269187A patent/JPS63237527A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5240978A (en) * | 1975-09-27 | 1977-03-30 | Fujitsu Ltd | Process for production of semiconductor device |
| JPS54163034A (en) * | 1978-06-14 | 1979-12-25 | Seiko Epson Corp | Removing method of resist |
| JPS58182827A (en) * | 1982-04-21 | 1983-10-25 | Toshiba Corp | Resist exfoliating method |
| JPS6235520A (en) * | 1985-08-08 | 1987-02-16 | Fujitsu Ltd | Manufacture of semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6123865A (en) * | 1998-09-09 | 2000-09-26 | Promos Technologies, Inc. | Method for improving etch uniformity during a wet etching process |
| JP2010021335A (en) * | 2008-07-10 | 2010-01-28 | Shibaura Mechatronics Corp | Substrate treating apparatus and substrate treatment method |
| JP2013150007A (en) * | 2013-04-17 | 2013-08-01 | Shibaura Mechatronics Corp | Substrate processing apparatus |
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