JPS54163034A - Removing method of resist - Google Patents

Removing method of resist

Info

Publication number
JPS54163034A
JPS54163034A JP7161078A JP7161078A JPS54163034A JP S54163034 A JPS54163034 A JP S54163034A JP 7161078 A JP7161078 A JP 7161078A JP 7161078 A JP7161078 A JP 7161078A JP S54163034 A JPS54163034 A JP S54163034A
Authority
JP
Japan
Prior art keywords
resist
etched
mask
plasma
freon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7161078A
Other languages
Japanese (ja)
Other versions
JPS5921015B2 (en
Inventor
Yoshihiro Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP53071610A priority Critical patent/JPS5921015B2/en
Publication of JPS54163034A publication Critical patent/JPS54163034A/en
Publication of JPS5921015B2 publication Critical patent/JPS5921015B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

PURPOSE:To reduce the time required for removing the resist having been used as a mask by exposing the resist to an O2 plasma atmosphere after Freon-base plasma etching and further dipping the same in a hot sulfuric acid. CONSTITUTION:In the manufacture of semiconductor integrated circuits, insulator films are etched by Freon base plasma with resist as a mask. Next, the resist film is exposed for more than 5 minutes to an O2 plasma atmosphere, after which it is dipped in a hot sulfuric acid. This eliminates the possibility for the heavy metals in the resist to remain as soil on the material being etched and does not degrade element characteristics.
JP53071610A 1978-06-14 1978-06-14 How to remove resist Expired JPS5921015B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53071610A JPS5921015B2 (en) 1978-06-14 1978-06-14 How to remove resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53071610A JPS5921015B2 (en) 1978-06-14 1978-06-14 How to remove resist

Publications (2)

Publication Number Publication Date
JPS54163034A true JPS54163034A (en) 1979-12-25
JPS5921015B2 JPS5921015B2 (en) 1984-05-17

Family

ID=13465584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53071610A Expired JPS5921015B2 (en) 1978-06-14 1978-06-14 How to remove resist

Country Status (1)

Country Link
JP (1) JPS5921015B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63237527A (en) * 1987-03-26 1988-10-04 Hoya Corp Resist peeling method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50138902A (en) * 1974-04-23 1975-11-06
JPS5196605A (en) * 1975-02-21 1976-08-25 Gasupurazumanyoru hotorejisutomakuno jokyoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50138902A (en) * 1974-04-23 1975-11-06
JPS5196605A (en) * 1975-02-21 1976-08-25 Gasupurazumanyoru hotorejisutomakuno jokyoho

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63237527A (en) * 1987-03-26 1988-10-04 Hoya Corp Resist peeling method

Also Published As

Publication number Publication date
JPS5921015B2 (en) 1984-05-17

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