JPS5679451A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5679451A JPS5679451A JP15662279A JP15662279A JPS5679451A JP S5679451 A JPS5679451 A JP S5679451A JP 15662279 A JP15662279 A JP 15662279A JP 15662279 A JP15662279 A JP 15662279A JP S5679451 A JPS5679451 A JP S5679451A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- resist
- formation
- film
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To improve the reliability of a semiconductor device by completely removing a conductive material by lifting off after formation of a pattern on the most part of a conductive film with a selective etching. CONSTITUTION:A hole is made in an SiO2 film 102 on an Si substrate 101 to provide a resist 104 with a conductive pattern opposite to intended one. An Al 105 is stacked on the film 102 to provide a resist 106 with the intended pattern. An Al residue 107 which is left at a step in this process is removed simultaneously with the peeling off of the resist 104 and 106. Thus, a desired Al pattern can be obtained. This method enables formation of the desired pattern easily without damage to the substrate, and additionally facilitates the formation of a pattern for multilayer films containing a major conductive material thereby improving the reliability of the device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15662279A JPS5679451A (en) | 1979-12-03 | 1979-12-03 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15662279A JPS5679451A (en) | 1979-12-03 | 1979-12-03 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5679451A true JPS5679451A (en) | 1981-06-30 |
Family
ID=15631727
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15662279A Pending JPS5679451A (en) | 1979-12-03 | 1979-12-03 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5679451A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4715109A (en) * | 1985-06-12 | 1987-12-29 | Texas Instruments Incorporated | Method of forming a high density vertical stud titanium silicide for reachup contact applications |
US5094979A (en) * | 1989-03-03 | 1992-03-10 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating semiconductor device |
-
1979
- 1979-12-03 JP JP15662279A patent/JPS5679451A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4715109A (en) * | 1985-06-12 | 1987-12-29 | Texas Instruments Incorporated | Method of forming a high density vertical stud titanium silicide for reachup contact applications |
US5094979A (en) * | 1989-03-03 | 1992-03-10 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating semiconductor device |
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