JPS54134981A - Formation method of highly-integrated element - Google Patents

Formation method of highly-integrated element

Info

Publication number
JPS54134981A
JPS54134981A JP4359578A JP4359578A JPS54134981A JP S54134981 A JPS54134981 A JP S54134981A JP 4359578 A JP4359578 A JP 4359578A JP 4359578 A JP4359578 A JP 4359578A JP S54134981 A JPS54134981 A JP S54134981A
Authority
JP
Japan
Prior art keywords
film
pattern
resist
hole
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4359578A
Other languages
Japanese (ja)
Inventor
Sotaro Edokoro
Hisanao Tsuge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4359578A priority Critical patent/JPS54134981A/en
Publication of JPS54134981A publication Critical patent/JPS54134981A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To eliminate the production of a defective hole by adhering a dielectric film different from the base substance of an element to a resist covering a hole formation region before contact-hole working and by working the hole after removing the film on the resist by lifting off the resist.
CONSTITUTION: At the time of the formation of a magnetic bubble memory element, conductive pattern 2 is adhered to magnetic single-crystal plate 1 via insulator film 4 of Al2O3, etc. Next, the entire surface is covered again with insulator film 5 of Al2O3, and bubble transfer pattern 3 is formed on it. Then, pattern 6 of a positive photo resist is provided onto a region to be lifted off, and processes of exposing and developing are so performed that the edge of this pattern will be pyramidal reversely. Next, a SiO2 film is adhered to the entire surface by vapor-depositing electron beams and pattern 6 is removed together with the SiO2 film on it, so that the SiO2 film will be left besides the contact hole. Afterwards, a positive type resist is provided here and hot-phosphorus etching is done to make an opening in pattern 3.
COPYRIGHT: (C)1979,JPO&Japio
JP4359578A 1978-04-12 1978-04-12 Formation method of highly-integrated element Pending JPS54134981A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4359578A JPS54134981A (en) 1978-04-12 1978-04-12 Formation method of highly-integrated element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4359578A JPS54134981A (en) 1978-04-12 1978-04-12 Formation method of highly-integrated element

Publications (1)

Publication Number Publication Date
JPS54134981A true JPS54134981A (en) 1979-10-19

Family

ID=12668147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4359578A Pending JPS54134981A (en) 1978-04-12 1978-04-12 Formation method of highly-integrated element

Country Status (1)

Country Link
JP (1) JPS54134981A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5923613A (en) * 1982-07-29 1984-02-07 Murata Mfg Co Ltd Piezoelectric resonator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5923613A (en) * 1982-07-29 1984-02-07 Murata Mfg Co Ltd Piezoelectric resonator

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