JPS57192264A - Method of etching - Google Patents

Method of etching

Info

Publication number
JPS57192264A
JPS57192264A JP7656281A JP7656281A JPS57192264A JP S57192264 A JPS57192264 A JP S57192264A JP 7656281 A JP7656281 A JP 7656281A JP 7656281 A JP7656281 A JP 7656281A JP S57192264 A JPS57192264 A JP S57192264A
Authority
JP
Japan
Prior art keywords
photoresist film
substrate
film
prescribed
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7656281A
Other languages
Japanese (ja)
Inventor
Shinichi Muramatsu
Yuzuru Oji
Kiichiro Mukai
Tatsumi Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7656281A priority Critical patent/JPS57192264A/en
Publication of JPS57192264A publication Critical patent/JPS57192264A/en
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To allow even a fine opening section to be subjected to uniform dry etching, by rendering a film surface section electrically-conductive before or after the photoresist film applied on a substrate is processed, and then exposing it to a plasma atmosphere.
CONSTITUTION: The photoresist film is applied on the prescribed substrate, the film is formed into a prescribed shape, and then the substrate is exposed to a prescribed plasma atmosphere so that dry etching is carried out. In this case, before or after the photoresist film is processed, at least the surface section of the photoresist film is rendered electrically-conductive. Accordingly, if high energy particles are flown through the plasma, the energy distribution or the density distribusion of the ions striking the sample surface will not be localized so that the etching can be uniformly effected.
COPYRIGHT: (C)1982,JPO&Japio
JP7656281A 1981-05-22 1981-05-22 Method of etching Pending JPS57192264A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7656281A JPS57192264A (en) 1981-05-22 1981-05-22 Method of etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7656281A JPS57192264A (en) 1981-05-22 1981-05-22 Method of etching

Publications (1)

Publication Number Publication Date
JPS57192264A true JPS57192264A (en) 1982-11-26

Family

ID=13608677

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7656281A Pending JPS57192264A (en) 1981-05-22 1981-05-22 Method of etching

Country Status (1)

Country Link
JP (1) JPS57192264A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60153127A (en) * 1984-01-23 1985-08-12 Oki Electric Ind Co Ltd Plasma etching device
JPS6320830A (en) * 1986-07-14 1988-01-28 Toshiba Corp Fine processing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60153127A (en) * 1984-01-23 1985-08-12 Oki Electric Ind Co Ltd Plasma etching device
JPS6320830A (en) * 1986-07-14 1988-01-28 Toshiba Corp Fine processing

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