JPS57208143A - Method for forming fine pattern - Google Patents

Method for forming fine pattern

Info

Publication number
JPS57208143A
JPS57208143A JP9426881A JP9426881A JPS57208143A JP S57208143 A JPS57208143 A JP S57208143A JP 9426881 A JP9426881 A JP 9426881A JP 9426881 A JP9426881 A JP 9426881A JP S57208143 A JPS57208143 A JP S57208143A
Authority
JP
Japan
Prior art keywords
pattern
dry etching
resistance against
developing
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9426881A
Other languages
Japanese (ja)
Inventor
Kazuhiro Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9426881A priority Critical patent/JPS57208143A/en
Publication of JPS57208143A publication Critical patent/JPS57208143A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Abstract

PURPOSE:To increase resistance against dry etching and to improve resistance against gas plasma by a method wherein metal ions are injected into a resist pattern obtained through developing and then dry etching is performed to form a fine pattern. CONSTITUTION:A metal Cr film 2 is formed on a glass substrate 1. A resist 3 for exposure of an electron beam is coated thereon and thus obtained element is subject to prebaking. Then, the electron beam is irradiated in accordance with the desired pattern. Thereafter, a resist pattern 4 is attained through developing with a solution which consists of methyl isobutyl ketone and isopropanol in the ratio of 8 to 1. Subsequently, after removing the developing solution and drying, ions are injected into all the surface of the pattern 4. As a result, dry etching can be performed using a resist pattern 4a as a mask, which pattern 4a has been metamorphosed to have resistance against gas plasma, so that a metal thin film pattern 5 may be obtained.
JP9426881A 1981-06-17 1981-06-17 Method for forming fine pattern Pending JPS57208143A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9426881A JPS57208143A (en) 1981-06-17 1981-06-17 Method for forming fine pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9426881A JPS57208143A (en) 1981-06-17 1981-06-17 Method for forming fine pattern

Publications (1)

Publication Number Publication Date
JPS57208143A true JPS57208143A (en) 1982-12-21

Family

ID=14105526

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9426881A Pending JPS57208143A (en) 1981-06-17 1981-06-17 Method for forming fine pattern

Country Status (1)

Country Link
JP (1) JPS57208143A (en)

Similar Documents

Publication Publication Date Title
JPS5569265A (en) Pattern-forming method
JPS52119172A (en) Forming method of fine pattern
JPS5461931A (en) Forming method of photo resist patterns
JPS57208143A (en) Method for forming fine pattern
JPS5528077A (en) Production of mask
JPS5715514A (en) Manufacture for reed screen electrode for elastic surface wave
JPS5443681A (en) Electron beam light-exposing method
JPS5741638A (en) Photomask for electron beam
JPS56140345A (en) Formation of pattern
JPS5452473A (en) Forming method for coating for fine pattern
JPS5632143A (en) Manufacture of photomask
JPS563679A (en) Formation of metallic pattern
JPS5496369A (en) Mask forming method
JPS5533035A (en) Forming of resist pattern shaped like inverted truncated pyramid
JPS5749233A (en) Laminar structure resist and forming method for pattern thereof
JPS5588057A (en) Production of photo mask
JPS56115534A (en) Formation of pattern
JPS56107554A (en) Formation of pattern
JPS56158334A (en) Manufacture of hard mask
JPS5743425A (en) Forming method for fine pattern
JPS57173943A (en) Manufacture of photo mask
JPS54162460A (en) Electrode forming method
JPS5635774A (en) Dry etching method
JPS5573892A (en) Pattern forming method for metal film
JPS5646228A (en) Manufacture of mask for x rays exposure