JPS56158334A - Manufacture of hard mask - Google Patents

Manufacture of hard mask

Info

Publication number
JPS56158334A
JPS56158334A JP6429680A JP6429680A JPS56158334A JP S56158334 A JPS56158334 A JP S56158334A JP 6429680 A JP6429680 A JP 6429680A JP 6429680 A JP6429680 A JP 6429680A JP S56158334 A JPS56158334 A JP S56158334A
Authority
JP
Japan
Prior art keywords
layer
hard mask
pattern
mask
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6429680A
Other languages
Japanese (ja)
Other versions
JPS6212503B2 (en
Inventor
Yaichiro Watakabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6429680A priority Critical patent/JPS56158334A/en
Publication of JPS56158334A publication Critical patent/JPS56158334A/en
Publication of JPS6212503B2 publication Critical patent/JPS6212503B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094Multilayer resist systems, e.g. planarising layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Surface Treatment Of Glass (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a hard mask of high quality and high accuracy by a dry etching method by laying a hard mask material, a heat resistant resist and a resist with high sensitivity on a substrate in order, drawing a pattern with electron beams, developing it, and using the resulting resist layer as a mask. CONSTITUTION:A layer 2 of a hard mask material such as Cr is formed on a transparent glass substrate 1, and on the layer 2 a heat resistant photoresist layer 13 and an electron beam resist layer 14 with high sensitivity are formed in order by coating. A pattern is drawn on the layer 14 with electron beams and developed. Using the pattern of the layer 14 as a mask the layer 13 is developed or dissolved to form the same pattern. Using the layers 13, 14 as a mask the Cr layer 2 is then dry etched by plasma, sputtering or ion etching. Thus, a hard mask 2 of high accuracy can be manufactured without causing defects such as pinholes.
JP6429680A 1980-05-12 1980-05-12 Manufacture of hard mask Granted JPS56158334A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6429680A JPS56158334A (en) 1980-05-12 1980-05-12 Manufacture of hard mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6429680A JPS56158334A (en) 1980-05-12 1980-05-12 Manufacture of hard mask

Publications (2)

Publication Number Publication Date
JPS56158334A true JPS56158334A (en) 1981-12-07
JPS6212503B2 JPS6212503B2 (en) 1987-03-19

Family

ID=13254131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6429680A Granted JPS56158334A (en) 1980-05-12 1980-05-12 Manufacture of hard mask

Country Status (1)

Country Link
JP (1) JPS56158334A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010088332A (en) * 2000-02-16 2001-09-26 카나가와 치히로 Photomask blank, photomask and method of manufacture
KR100422822B1 (en) * 1996-10-05 2004-06-16 주식회사 하이닉스반도체 Method for fabricating mask by dry etch

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100422822B1 (en) * 1996-10-05 2004-06-16 주식회사 하이닉스반도체 Method for fabricating mask by dry etch
KR20010088332A (en) * 2000-02-16 2001-09-26 카나가와 치히로 Photomask blank, photomask and method of manufacture

Also Published As

Publication number Publication date
JPS6212503B2 (en) 1987-03-19

Similar Documents

Publication Publication Date Title
JPS5593225A (en) Forming method of minute pattern
JPS5557807A (en) Production of diffraction grating
US4144066A (en) Electron bombardment method for making stained glass photomasks
JPS56168654A (en) Photomask
JPS56158334A (en) Manufacture of hard mask
JPS5528077A (en) Production of mask
JPS55143560A (en) Manufacture of photomask
JPS5715514A (en) Manufacture for reed screen electrode for elastic surface wave
JPS57112025A (en) Formation of pattern
JPH0298147A (en) Manufacture of semiconductor device
JPS5528078A (en) Production of mask
JPS5543542A (en) Exposure method and exposure mask used for this
JPS5612736A (en) Formation of fine chromium pattern
JPS56115534A (en) Formation of pattern
JPS5452473A (en) Forming method for coating for fine pattern
JPS5637629A (en) Formation of thin film pattern
JPS5632143A (en) Manufacture of photomask
JPS5630723A (en) Pattern formation by electron beam exposing device
JPS57135950A (en) Preparation of photomask
JPS5588057A (en) Production of photo mask
JPS5741638A (en) Photomask for electron beam
JPS5496371A (en) Mask forming method
JPS5748731A (en) Manufacture of mask
JPS55144247A (en) Preparation of photomask
JPS5743425A (en) Forming method for fine pattern