JPS56158334A - Manufacture of hard mask - Google Patents
Manufacture of hard maskInfo
- Publication number
- JPS56158334A JPS56158334A JP6429680A JP6429680A JPS56158334A JP S56158334 A JPS56158334 A JP S56158334A JP 6429680 A JP6429680 A JP 6429680A JP 6429680 A JP6429680 A JP 6429680A JP S56158334 A JPS56158334 A JP S56158334A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- hard mask
- pattern
- mask
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Surface Treatment Of Glass (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To obtain a hard mask of high quality and high accuracy by a dry etching method by laying a hard mask material, a heat resistant resist and a resist with high sensitivity on a substrate in order, drawing a pattern with electron beams, developing it, and using the resulting resist layer as a mask. CONSTITUTION:A layer 2 of a hard mask material such as Cr is formed on a transparent glass substrate 1, and on the layer 2 a heat resistant photoresist layer 13 and an electron beam resist layer 14 with high sensitivity are formed in order by coating. A pattern is drawn on the layer 14 with electron beams and developed. Using the pattern of the layer 14 as a mask the layer 13 is developed or dissolved to form the same pattern. Using the layers 13, 14 as a mask the Cr layer 2 is then dry etched by plasma, sputtering or ion etching. Thus, a hard mask 2 of high accuracy can be manufactured without causing defects such as pinholes.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6429680A JPS56158334A (en) | 1980-05-12 | 1980-05-12 | Manufacture of hard mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6429680A JPS56158334A (en) | 1980-05-12 | 1980-05-12 | Manufacture of hard mask |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56158334A true JPS56158334A (en) | 1981-12-07 |
JPS6212503B2 JPS6212503B2 (en) | 1987-03-19 |
Family
ID=13254131
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6429680A Granted JPS56158334A (en) | 1980-05-12 | 1980-05-12 | Manufacture of hard mask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56158334A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010088332A (en) * | 2000-02-16 | 2001-09-26 | 카나가와 치히로 | Photomask blank, photomask and method of manufacture |
KR100422822B1 (en) * | 1996-10-05 | 2004-06-16 | 주식회사 하이닉스반도체 | Method for fabricating mask by dry etch |
-
1980
- 1980-05-12 JP JP6429680A patent/JPS56158334A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100422822B1 (en) * | 1996-10-05 | 2004-06-16 | 주식회사 하이닉스반도체 | Method for fabricating mask by dry etch |
KR20010088332A (en) * | 2000-02-16 | 2001-09-26 | 카나가와 치히로 | Photomask blank, photomask and method of manufacture |
Also Published As
Publication number | Publication date |
---|---|
JPS6212503B2 (en) | 1987-03-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5593225A (en) | Forming method of minute pattern | |
JPS5557807A (en) | Production of diffraction grating | |
US4144066A (en) | Electron bombardment method for making stained glass photomasks | |
JPS56168654A (en) | Photomask | |
JPS56158334A (en) | Manufacture of hard mask | |
JPS5528077A (en) | Production of mask | |
JPS55143560A (en) | Manufacture of photomask | |
JPS5715514A (en) | Manufacture for reed screen electrode for elastic surface wave | |
JPS57112025A (en) | Formation of pattern | |
JPH0298147A (en) | Manufacture of semiconductor device | |
JPS5528078A (en) | Production of mask | |
JPS5543542A (en) | Exposure method and exposure mask used for this | |
JPS5612736A (en) | Formation of fine chromium pattern | |
JPS56115534A (en) | Formation of pattern | |
JPS5452473A (en) | Forming method for coating for fine pattern | |
JPS5637629A (en) | Formation of thin film pattern | |
JPS5632143A (en) | Manufacture of photomask | |
JPS5630723A (en) | Pattern formation by electron beam exposing device | |
JPS57135950A (en) | Preparation of photomask | |
JPS5588057A (en) | Production of photo mask | |
JPS5741638A (en) | Photomask for electron beam | |
JPS5496371A (en) | Mask forming method | |
JPS5748731A (en) | Manufacture of mask | |
JPS55144247A (en) | Preparation of photomask | |
JPS5743425A (en) | Forming method for fine pattern |