JPS5612736A - Formation of fine chromium pattern - Google Patents
Formation of fine chromium patternInfo
- Publication number
- JPS5612736A JPS5612736A JP8717679A JP8717679A JPS5612736A JP S5612736 A JPS5612736 A JP S5612736A JP 8717679 A JP8717679 A JP 8717679A JP 8717679 A JP8717679 A JP 8717679A JP S5612736 A JPS5612736 A JP S5612736A
- Authority
- JP
- Japan
- Prior art keywords
- chromium
- film
- etching
- formation
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Abstract
PURPOSE:To obtain a fine pattern by a process which comprises formation of the chromium film, the chromium oxide film and the resist pattern on the substrate, etching to expose the surface of the chromium on which the etching resistant film is formed and side etching the bottom of the resist. CONSTITUTION:The metal chromium film 2 with a thickness of 500Angstrom and the chromium oxide film 3 with a thickness of 200Angstrom are applied on the glass substrate 1 by sputtering evaporation. Then, a positive photoresist film is applied and then, eithography is given by ultraviolet rays to form a resist pattern 5. Subsequently, the chromium oxide 3 is selectively etched by plasma etching to form a removed section 6, while the etching resistant film 7 is formed on the surface of the metal chromium film 2. Then, the chromium oxide 3 exposed to the side wall of the removed section 6 undergoes a side etching and further the chromium thereunder an etching. This allows the formation of a fine etched chromium pattern less than 0.5mum with the normal ultraviolet rays exposure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8717679A JPS5612736A (en) | 1979-07-10 | 1979-07-10 | Formation of fine chromium pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8717679A JPS5612736A (en) | 1979-07-10 | 1979-07-10 | Formation of fine chromium pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5612736A true JPS5612736A (en) | 1981-02-07 |
Family
ID=13907672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8717679A Pending JPS5612736A (en) | 1979-07-10 | 1979-07-10 | Formation of fine chromium pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5612736A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6097404U (en) * | 1983-12-08 | 1985-07-03 | 善家 重忠 | cylinder device |
JPS6166235U (en) * | 1984-10-08 | 1986-05-07 |
-
1979
- 1979-07-10 JP JP8717679A patent/JPS5612736A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6097404U (en) * | 1983-12-08 | 1985-07-03 | 善家 重忠 | cylinder device |
JPS6166235U (en) * | 1984-10-08 | 1986-05-07 |
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