JPS57135950A - Preparation of photomask - Google Patents

Preparation of photomask

Info

Publication number
JPS57135950A
JPS57135950A JP1958481A JP1958481A JPS57135950A JP S57135950 A JPS57135950 A JP S57135950A JP 1958481 A JP1958481 A JP 1958481A JP 1958481 A JP1958481 A JP 1958481A JP S57135950 A JPS57135950 A JP S57135950A
Authority
JP
Japan
Prior art keywords
layer
photomask
plasma
metallic
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1958481A
Other languages
Japanese (ja)
Other versions
JPS629895B2 (en
Inventor
Masanobu Shibuya
Masaki Shintani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Victor Company of Japan Ltd
Nippon Victor KK
Original Assignee
Victor Company of Japan Ltd
Nippon Victor KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Victor Company of Japan Ltd, Nippon Victor KK filed Critical Victor Company of Japan Ltd
Priority to JP1958481A priority Critical patent/JPS57135950A/en
Publication of JPS57135950A publication Critical patent/JPS57135950A/en
Publication of JPS629895B2 publication Critical patent/JPS629895B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To obtain a mask having few defects and high precision in manufacturing a low-reflection photomask having a light-shielding layer consisting of a metallic layer and a metallic oxide layer, by processing a pattern formed on the metal layer using plasma to form a metallic oxide layer. CONSTITUTION:A layer 11 of a metal, such as chromium is formed on a glass substrate 10 by vapor deposition or the like, coated with a photoresist 12, patternwise exposed, and then, subjected to development, etching, and removal of the photoresist film to form a single layer type photomask 14. It undergoes plasma treatment in a plasma surface treatment apparatus or the like, thus permitting a plasma-treated film 15 to be formed on the surface of the metallic layer 11, a double-layer photomask 14 to be formed, all the surface of the metallic layer to be plasma-treated, therefore the photomask to be high in durability, etching to be simple and precisely practicable due to single-layer etching, manufacture technique to be also simple, and a low reflection photomask to be obtained with high yield.
JP1958481A 1981-02-14 1981-02-14 Preparation of photomask Granted JPS57135950A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1958481A JPS57135950A (en) 1981-02-14 1981-02-14 Preparation of photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1958481A JPS57135950A (en) 1981-02-14 1981-02-14 Preparation of photomask

Publications (2)

Publication Number Publication Date
JPS57135950A true JPS57135950A (en) 1982-08-21
JPS629895B2 JPS629895B2 (en) 1987-03-03

Family

ID=12003301

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1958481A Granted JPS57135950A (en) 1981-02-14 1981-02-14 Preparation of photomask

Country Status (1)

Country Link
JP (1) JPS57135950A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6286364A (en) * 1985-10-11 1987-04-20 Nec Corp Method for selectively depositing metallic oxide film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6286364A (en) * 1985-10-11 1987-04-20 Nec Corp Method for selectively depositing metallic oxide film

Also Published As

Publication number Publication date
JPS629895B2 (en) 1987-03-03

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