JPS55134931A - Method of forming fine electrode of electronic part - Google Patents

Method of forming fine electrode of electronic part

Info

Publication number
JPS55134931A
JPS55134931A JP4406979A JP4406979A JPS55134931A JP S55134931 A JPS55134931 A JP S55134931A JP 4406979 A JP4406979 A JP 4406979A JP 4406979 A JP4406979 A JP 4406979A JP S55134931 A JPS55134931 A JP S55134931A
Authority
JP
Japan
Prior art keywords
substrate
resist layer
electrode layer
electrode
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4406979A
Other languages
Japanese (ja)
Inventor
Yoshitaka Yoshikawa
Yasuhiko Horio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4406979A priority Critical patent/JPS55134931A/en
Publication of JPS55134931A publication Critical patent/JPS55134931A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To make easy to remove the cracks and local peeling off of an electrode layer and obtain a fine electrode of high accuracy by utilizing a fact that the etching speed of a metal electrode layer varies according whether the etching position is on the surface of a substrate, the upper surface of a resist layer or the end surface. CONSTITUTION:The surface of a lead oxide ceramic substrate is mirror finished, and on the surface a positive phosoresist is formed and a photomask to make the cross finger type electrode pattern of an elastic wave filter is arranged. Next, all over the surface of the substrate including the resist layer patterned by treatments such as exposing, developing, etc., Cr and Al layers are lap-deposited, then the substrate is dipped in acetone and the resist layer is swollen and solved partially. By so doing, the local peeling off and cracking of the electrode layer occur on the upper surface of the resist layer and on the end surfaces, therefore, if the substrate is supersonic-wave-cleaned in 0.5% solution of sodium hydroxide, the electrode layer there can be removed in a short time and a fine electrode pattern can be obtained.
JP4406979A 1979-04-10 1979-04-10 Method of forming fine electrode of electronic part Pending JPS55134931A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4406979A JPS55134931A (en) 1979-04-10 1979-04-10 Method of forming fine electrode of electronic part

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4406979A JPS55134931A (en) 1979-04-10 1979-04-10 Method of forming fine electrode of electronic part

Publications (1)

Publication Number Publication Date
JPS55134931A true JPS55134931A (en) 1980-10-21

Family

ID=12681332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4406979A Pending JPS55134931A (en) 1979-04-10 1979-04-10 Method of forming fine electrode of electronic part

Country Status (1)

Country Link
JP (1) JPS55134931A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6394632A (en) * 1986-10-09 1988-04-25 Pioneer Electronic Corp Manufacture of surface acoustic wave element
US7704683B2 (en) 2004-07-15 2010-04-27 Schott Ag Process for producing patterned optical filter layers on substrates

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6394632A (en) * 1986-10-09 1988-04-25 Pioneer Electronic Corp Manufacture of surface acoustic wave element
US7704683B2 (en) 2004-07-15 2010-04-27 Schott Ag Process for producing patterned optical filter layers on substrates

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