JPS56114323A - Method for electron beam lighography - Google Patents
Method for electron beam lighographyInfo
- Publication number
- JPS56114323A JPS56114323A JP1725480A JP1725480A JPS56114323A JP S56114323 A JPS56114323 A JP S56114323A JP 1725480 A JP1725480 A JP 1725480A JP 1725480 A JP1725480 A JP 1725480A JP S56114323 A JPS56114323 A JP S56114323A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electron beam
- highly accurate
- chloride
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/093—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antistatic means, e.g. for charge depletion
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To prevent electric charging and to perform highly accurate describing by immersing the substrate, on which an electron beam resist film is deposited, into the solution of metal chloride or complex salt, and imparting the conductivity on the surface. CONSTITUTION:A PMMA resin film is applied on the mask which is formed by evaporating Cr on the glass substrate as the electron beam resist film by rotating the substrate. The substrate is immersed in a solution of 0.2-20% concentration which is prepared by resolving palladium chloride, tin chloride, and the like in hydrochloric acid, or by resolving copper chloride in ethyl alcohol for about 5- 10min and is washed with water for about 5min. Since the conductivity is imparted to all the surface of the substrate, the highly accurate pattern can be described by the electron beam. After the description, the unnecessary metal compound is removed by the solution of said metal compound, and the substrate is washed with water. Cr is etched by said resistmask. In this constitution, the highly accurate description becomes possible by the very simple method, a many number of substrate can be uniformly treated, and the mass production of LSIs having fine patterns can be accomplished advantageously.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1725480A JPS56114323A (en) | 1980-02-15 | 1980-02-15 | Method for electron beam lighography |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1725480A JPS56114323A (en) | 1980-02-15 | 1980-02-15 | Method for electron beam lighography |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56114323A true JPS56114323A (en) | 1981-09-08 |
Family
ID=11938817
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1725480A Pending JPS56114323A (en) | 1980-02-15 | 1980-02-15 | Method for electron beam lighography |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56114323A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6074521A (en) * | 1983-09-30 | 1985-04-26 | Toshiba Corp | Pattern forming process |
JPS6399525A (en) * | 1986-10-16 | 1988-04-30 | Matsushita Electric Ind Co Ltd | Pattern forming method |
US5019485A (en) * | 1988-10-13 | 1991-05-28 | Fujitsu Limited | Process of using an electrically conductive layer-providing composition for formation of resist patterns |
-
1980
- 1980-02-15 JP JP1725480A patent/JPS56114323A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6074521A (en) * | 1983-09-30 | 1985-04-26 | Toshiba Corp | Pattern forming process |
JPS6399525A (en) * | 1986-10-16 | 1988-04-30 | Matsushita Electric Ind Co Ltd | Pattern forming method |
JPH06105677B2 (en) * | 1986-10-16 | 1994-12-21 | 松下電器産業株式会社 | Pattern formation method |
US5019485A (en) * | 1988-10-13 | 1991-05-28 | Fujitsu Limited | Process of using an electrically conductive layer-providing composition for formation of resist patterns |
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