JPS5735860A - Preparation of photomask - Google Patents
Preparation of photomaskInfo
- Publication number
- JPS5735860A JPS5735860A JP11123480A JP11123480A JPS5735860A JP S5735860 A JPS5735860 A JP S5735860A JP 11123480 A JP11123480 A JP 11123480A JP 11123480 A JP11123480 A JP 11123480A JP S5735860 A JPS5735860 A JP S5735860A
- Authority
- JP
- Japan
- Prior art keywords
- film
- chromium
- mask
- deposited
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
PURPOSE:To enhance adhesion between a metallic thin film and a resist film and to prevent defects on a metal mask, by subjecting the metallic thin film deposited to a glass bustrate to heat treatment, and then, forming a photoresist film on this film. CONSTITUTION:Chromium is deposited on a glass substrate 3 by sputtering, vapor deposition, or the like method to form a chromium film 1. This film is heat-treated at 80-150 deg.C. Then, a photoresist film 4 is selectively formed in a specified pattern on the film 1 by the ordinary method, and the exposed parts of the film 1 are removed by etching using the film 4 as a mask, thus permitting a desired chromium thin film mask to be obtained after removing the remaining film 4.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11123480A JPS5735860A (en) | 1980-08-13 | 1980-08-13 | Preparation of photomask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11123480A JPS5735860A (en) | 1980-08-13 | 1980-08-13 | Preparation of photomask |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5735860A true JPS5735860A (en) | 1982-02-26 |
JPS6237778B2 JPS6237778B2 (en) | 1987-08-14 |
Family
ID=14555958
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11123480A Granted JPS5735860A (en) | 1980-08-13 | 1980-08-13 | Preparation of photomask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5735860A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5892102A (en) * | 1996-02-09 | 1999-04-06 | Mitsubishi Rayon Co., Ltd. | Catalyst used in production of carboxylic acid esters and process for producing these esters |
CN110676156A (en) * | 2019-10-21 | 2020-01-10 | 昆山百利合电子材料有限公司 | Photoetching semiconductor processing technology |
-
1980
- 1980-08-13 JP JP11123480A patent/JPS5735860A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5892102A (en) * | 1996-02-09 | 1999-04-06 | Mitsubishi Rayon Co., Ltd. | Catalyst used in production of carboxylic acid esters and process for producing these esters |
CN110676156A (en) * | 2019-10-21 | 2020-01-10 | 昆山百利合电子材料有限公司 | Photoetching semiconductor processing technology |
Also Published As
Publication number | Publication date |
---|---|
JPS6237778B2 (en) | 1987-08-14 |
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