JPS5646228A - Manufacture of mask for x rays exposure - Google Patents

Manufacture of mask for x rays exposure

Info

Publication number
JPS5646228A
JPS5646228A JP12193279A JP12193279A JPS5646228A JP S5646228 A JPS5646228 A JP S5646228A JP 12193279 A JP12193279 A JP 12193279A JP 12193279 A JP12193279 A JP 12193279A JP S5646228 A JPS5646228 A JP S5646228A
Authority
JP
Japan
Prior art keywords
layer
pattern
ion etching
vapor deposited
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12193279A
Other languages
Japanese (ja)
Inventor
Fumio Yamagishi
Yuji Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12193279A priority Critical patent/JPS5646228A/en
Publication of JPS5646228A publication Critical patent/JPS5646228A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To thoroughly remove an undercoat layer for plating without deteriorating the accuracy and film thickness of an X rays absorbing body by forming an ion etching resistant protective layer on a pattern of the absorbing body and removing the undercoat layer by ion etching. CONSTITUTION:Ni-Cr or the like is vapor deposited on silicon substrate 1 to form vapor deposited metal layer 2, Au is vapor deposited on layer 2 to form vapor deposited Au layer 3, and layer 3 is coated with resist 4. By exposure to electron beams or light, resist 4 where a pattern 6 of an X rays absorbing body is formed, is partially removed to make openings 5 and pattern 6 is formed by Au plating in openings 5 using Au layer 3 as an electrode. Pattern 6 is then covered with Ni or the like to form ion etching resistant protective layer 10, and after removing resist pattern 4 Au layer 3 is removed by ion etching.
JP12193279A 1979-09-25 1979-09-25 Manufacture of mask for x rays exposure Pending JPS5646228A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12193279A JPS5646228A (en) 1979-09-25 1979-09-25 Manufacture of mask for x rays exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12193279A JPS5646228A (en) 1979-09-25 1979-09-25 Manufacture of mask for x rays exposure

Publications (1)

Publication Number Publication Date
JPS5646228A true JPS5646228A (en) 1981-04-27

Family

ID=14823491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12193279A Pending JPS5646228A (en) 1979-09-25 1979-09-25 Manufacture of mask for x rays exposure

Country Status (1)

Country Link
JP (1) JPS5646228A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4599737A (en) * 1982-09-16 1986-07-08 Hitachi, Ltd. X-ray mask with Ni pattern

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5042376A (en) * 1973-08-20 1975-04-17
JPS5337703A (en) * 1976-09-20 1978-04-07 Kobe Steel Ltd Conversion of coal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5042376A (en) * 1973-08-20 1975-04-17
JPS5337703A (en) * 1976-09-20 1978-04-07 Kobe Steel Ltd Conversion of coal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4599737A (en) * 1982-09-16 1986-07-08 Hitachi, Ltd. X-ray mask with Ni pattern

Similar Documents

Publication Publication Date Title
JPS57168246A (en) Formation of negative pattern
JPS5646228A (en) Manufacture of mask for x rays exposure
JPS52119172A (en) Forming method of fine pattern
JPS5492061A (en) Micropattern forming method
JPS5443681A (en) Electron beam light-exposing method
JPS57155539A (en) Mask
JPS5679428A (en) Working of ultra-fine article
JPS5749233A (en) Laminar structure resist and forming method for pattern thereof
JPS5680130A (en) Manufacture of semiconductor device
JPS56140345A (en) Formation of pattern
JPS5741638A (en) Photomask for electron beam
JPS5618429A (en) Minute electrode formation
JPS5735860A (en) Preparation of photomask
JPS5594491A (en) Forming method for thick minute metal pattern
JPS56119127A (en) Photomask manufacture
JPS5689741A (en) Dryplate for photomasking
JPS5533035A (en) Forming of resist pattern shaped like inverted truncated pyramid
JPS5616676A (en) Preparation of minute pattern
JPS5799738A (en) Charged beam exposure method
JPS54162460A (en) Electrode forming method
JPS5743425A (en) Forming method for fine pattern
JPS5612736A (en) Formation of fine chromium pattern
JPS5452473A (en) Forming method for coating for fine pattern
JPS56130751A (en) Manufacture of mask
JPS57208143A (en) Method for forming fine pattern