JPS5618429A - Minute electrode formation - Google Patents

Minute electrode formation

Info

Publication number
JPS5618429A
JPS5618429A JP9342779A JP9342779A JPS5618429A JP S5618429 A JPS5618429 A JP S5618429A JP 9342779 A JP9342779 A JP 9342779A JP 9342779 A JP9342779 A JP 9342779A JP S5618429 A JPS5618429 A JP S5618429A
Authority
JP
Japan
Prior art keywords
chrome
layer
contg
electrode
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9342779A
Other languages
Japanese (ja)
Inventor
Shuji Urabe
Suomi Yuki
Junichiro Minowa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP9342779A priority Critical patent/JPS5618429A/en
Publication of JPS5618429A publication Critical patent/JPS5618429A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To obtain a highly precise minute electrode pattern by a method wherein etching is performed by providing a mask or a two-layer mask both of chrome or chrome-contg. photo resist on a metal layer for electrode formed on a substrate. CONSTITUTION:The metal layer for electrode 2 consisting of Al or Au, etc., is provided on an elastic substrate 1 having piezoelectric property, and a chrome or chrome-contg. layer 11 having small light-reflectivity and a photo resist layer 3 are formed on it. The photo resist layer 3 is treated with exposure to form a prescribed pattern, and the chrome or chrome-contg. layer 11 is etched using the resist 3 as masks 4. The metal layer for electrode 2 is etched using the chrome or chrome- contg. layer or the two layer of chrome or chrome-contg. resist as masks to form a conductive pattern. By this way, the reduction of pattern precision caused in the exposure time by the reflection from Al or Au, etc., is prevented, and a conductive pattern having a rectangular sectional area can be obtained.
JP9342779A 1979-07-23 1979-07-23 Minute electrode formation Pending JPS5618429A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9342779A JPS5618429A (en) 1979-07-23 1979-07-23 Minute electrode formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9342779A JPS5618429A (en) 1979-07-23 1979-07-23 Minute electrode formation

Publications (1)

Publication Number Publication Date
JPS5618429A true JPS5618429A (en) 1981-02-21

Family

ID=14081997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9342779A Pending JPS5618429A (en) 1979-07-23 1979-07-23 Minute electrode formation

Country Status (1)

Country Link
JP (1) JPS5618429A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57115011A (en) * 1981-01-08 1982-07-17 Toshiba Corp Manufacture for surface acoustic wave element
US7328497B2 (en) 1999-11-01 2008-02-12 Agere Systems Inc. Incremental tuning process for electrical resonators based on mechanical motion

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52136590A (en) * 1976-05-11 1977-11-15 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS54111285A (en) * 1978-02-20 1979-08-31 Nec Corp Production of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52136590A (en) * 1976-05-11 1977-11-15 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS54111285A (en) * 1978-02-20 1979-08-31 Nec Corp Production of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57115011A (en) * 1981-01-08 1982-07-17 Toshiba Corp Manufacture for surface acoustic wave element
JPH0145246B2 (en) * 1981-01-08 1989-10-03 Tokyo Shibaura Electric Co
US7328497B2 (en) 1999-11-01 2008-02-12 Agere Systems Inc. Incremental tuning process for electrical resonators based on mechanical motion

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