JPS5679428A - Working of ultra-fine article - Google Patents

Working of ultra-fine article

Info

Publication number
JPS5679428A
JPS5679428A JP15564079A JP15564079A JPS5679428A JP S5679428 A JPS5679428 A JP S5679428A JP 15564079 A JP15564079 A JP 15564079A JP 15564079 A JP15564079 A JP 15564079A JP S5679428 A JPS5679428 A JP S5679428A
Authority
JP
Japan
Prior art keywords
film
pattern
etched
developed
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15564079A
Other languages
Japanese (ja)
Inventor
Fumio Murai
Shinji Okazaki
Kozo Mochiji
Susumu Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15564079A priority Critical patent/JPS5679428A/en
Publication of JPS5679428A publication Critical patent/JPS5679428A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a fine pattern with a high accuracy by a method wherein a photoresist film, a metal film and an electronic resist film are piled on a substrate when a desired pattern is formed thereon, and they are radiated with electron beam, developed, exposed and etched. CONSTITUTION:Photoresist film 2 having a thickness of 1-1.5mum, a metalic film 3 made of Al, Cr, Mo, Ti, W or Ta having a thickness of 50-200nm, and an elecron beam resist film 4 having a thickness of 200-600nm are piled in this sequence on the substrate 1 to be processed. Then, electron beams are radiated on the film 4 to inscribe the pattern, the pattern is developed, the produced pattern is applied as a mask, while the film 3 is wet etched or dry etched, then the film 4 is removed. Then, a light is irradiated over an entire surface of the substrate, nonrequired film 3 is removed, the film 2 is developed, only unexposed part of the film 2 positioned below the film 3 is left as the film 5, the base plate 1 is etched with a mask of the unexposed part, then the film 5 is removed.
JP15564079A 1979-12-03 1979-12-03 Working of ultra-fine article Pending JPS5679428A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15564079A JPS5679428A (en) 1979-12-03 1979-12-03 Working of ultra-fine article

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15564079A JPS5679428A (en) 1979-12-03 1979-12-03 Working of ultra-fine article

Publications (1)

Publication Number Publication Date
JPS5679428A true JPS5679428A (en) 1981-06-30

Family

ID=15610386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15564079A Pending JPS5679428A (en) 1979-12-03 1979-12-03 Working of ultra-fine article

Country Status (1)

Country Link
JP (1) JPS5679428A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106034A (en) * 1980-12-23 1982-07-01 Nippon Telegr & Teleph Corp <Ntt> Patterning method
JPS61134017A (en) * 1984-12-04 1986-06-21 Nec Corp Manufacture of semiconductor device
JPS62204525A (en) * 1986-03-04 1987-09-09 Nec Corp 3-layer resist structure
JPH07240542A (en) * 1994-03-02 1995-09-12 Hitachi Ltd Mask material for superconductive thin film

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111073A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Fine pattern forming
JPS52119172A (en) * 1976-03-31 1977-10-06 Fujitsu Ltd Forming method of fine pattern
JPS5492061A (en) * 1977-12-29 1979-07-20 Fujitsu Ltd Micropattern forming method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111073A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Fine pattern forming
JPS52119172A (en) * 1976-03-31 1977-10-06 Fujitsu Ltd Forming method of fine pattern
JPS5492061A (en) * 1977-12-29 1979-07-20 Fujitsu Ltd Micropattern forming method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106034A (en) * 1980-12-23 1982-07-01 Nippon Telegr & Teleph Corp <Ntt> Patterning method
JPS61134017A (en) * 1984-12-04 1986-06-21 Nec Corp Manufacture of semiconductor device
JPS62204525A (en) * 1986-03-04 1987-09-09 Nec Corp 3-layer resist structure
JPH07240542A (en) * 1994-03-02 1995-09-12 Hitachi Ltd Mask material for superconductive thin film

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