JPS5635422A - Method of etching - Google Patents

Method of etching

Info

Publication number
JPS5635422A
JPS5635422A JP10440980A JP10440980A JPS5635422A JP S5635422 A JPS5635422 A JP S5635422A JP 10440980 A JP10440980 A JP 10440980A JP 10440980 A JP10440980 A JP 10440980A JP S5635422 A JPS5635422 A JP S5635422A
Authority
JP
Japan
Prior art keywords
film
opening
pattern
resist
remove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10440980A
Other languages
Japanese (ja)
Inventor
Masaru Asano
Tetsutada Sakurai
Yoshio Haruhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10440980A priority Critical patent/JPS5635422A/en
Publication of JPS5635422A publication Critical patent/JPS5635422A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a fine pattern of high accuracy, by leaving a part of a resist film, which is in contact with a worked piece, in an opening provided in the film and by applying directional particle energy to the left film part to remove it when making the pattern in the resist film by chemical etching. CONSTITUTION:A photoresist film 2 is coated on a base film 1 which is a worked piece whose surface is to be provided with a pattern by chemical etching. Exposure to light or an electron beam or the like is effected. The film 2 is then developed and dissolved to provide an opening 3. At that time, a film part 2 is left as a film 4 of deliberately reduced thickness at the bottom of the opening 3. Directional particle energy of plasma, ions or the like is applied to the thin film 4 to remove it. At the same time, the surface portion 5 of the film 2 is removed to make the resist pattern having the fine opening 3. According to said method, no overhang and cutting-in take place at the bottom of the opening 3. Therefore, the opening is made in neat shape.
JP10440980A 1980-07-31 1980-07-31 Method of etching Pending JPS5635422A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10440980A JPS5635422A (en) 1980-07-31 1980-07-31 Method of etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10440980A JPS5635422A (en) 1980-07-31 1980-07-31 Method of etching

Publications (1)

Publication Number Publication Date
JPS5635422A true JPS5635422A (en) 1981-04-08

Family

ID=14379908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10440980A Pending JPS5635422A (en) 1980-07-31 1980-07-31 Method of etching

Country Status (1)

Country Link
JP (1) JPS5635422A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2784059A1 (en) 1998-09-11 2000-04-07 Honda Motor Co Ltd Air cleaning device for two-wheeled motor vehicle

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834039A (en) * 1971-09-03 1973-05-15
JPS4977578A (en) * 1972-11-27 1974-07-26

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834039A (en) * 1971-09-03 1973-05-15
JPS4977578A (en) * 1972-11-27 1974-07-26

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2784059A1 (en) 1998-09-11 2000-04-07 Honda Motor Co Ltd Air cleaning device for two-wheeled motor vehicle

Similar Documents

Publication Publication Date Title
EP0020776A4 (en) Method of forming patterns.
JPS5635422A (en) Method of etching
GB2003660A (en) Deposition of material on a substrate
JPS52119172A (en) Forming method of fine pattern
JPS5432143A (en) Etching process
JPS5679428A (en) Working of ultra-fine article
JPS57202535A (en) Formation of negative resist pattern
JPS6424422A (en) Formation of fine pattern
JPS56140345A (en) Formation of pattern
JPS57170530A (en) Manufacture of x-ray exposure mask
JPS56105637A (en) Formation of pattern
JPS55140229A (en) Method for formation of fine pattern
JPS56115534A (en) Formation of pattern
JPS5326575A (en) Ion etching method
JPS52120770A (en) Thin film formation method
JPS57170533A (en) Forming method for mask pattern
JPS5452473A (en) Forming method for coating for fine pattern
JPS55131730A (en) Concaved echelette grating and its process
JPS56107554A (en) Formation of pattern
JPS57208143A (en) Method for forming fine pattern
JPS56107245A (en) Manufacture of photomask
JPS57173943A (en) Manufacture of photo mask
JPS55151336A (en) Forming method of fine pattern
JPS56101745A (en) Formation of microminiature electrode
JPS5740929A (en) Processing method of resist