JPS57170530A - Manufacture of x-ray exposure mask - Google Patents
Manufacture of x-ray exposure maskInfo
- Publication number
- JPS57170530A JPS57170530A JP5532181A JP5532181A JPS57170530A JP S57170530 A JPS57170530 A JP S57170530A JP 5532181 A JP5532181 A JP 5532181A JP 5532181 A JP5532181 A JP 5532181A JP S57170530 A JPS57170530 A JP S57170530A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- layer
- ray absorbing
- substrate
- auxiliary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 239000011358 absorbing material Substances 0.000 abstract 2
- 238000007687 exposure technique Methods 0.000 abstract 2
- 238000010884 ion-beam technique Methods 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To obtain an ultrafine X-ray absorbing layer pattern by forming the prescribed resist pattern on an Si substrate when forming the X-ray absorbing layer pattern on the substrate, burying the part therebetween with an auxiliary layer made of X-ray absorbing material, emitting an inert ion beam to readhere the auxiliary layer to the side surface of the resist pattern and remaining only the auxiliary pattern. CONSTITUTION:A photoresist film 22 is coated on a substrate 21 made of Si, the film is formed in the prescribed pattern 23 by an ordinary optical exposure technique, and an auxiliary layer 24 of an X-ray absorbing material is formed on the part between the patterns 23 and on the pattern 23 by a film forming method having good directivity such as a vacuum deposition or a sputter deposition. Then, an Ar ion beam is emitted in a shower stage on the overall surface to etch the surface, and with the layer 24 as a readhesive layer 25 the layer 24 is adhered only to the side wall of the pattern 23. Thereafter, the pattern 23 is ashed and removed, and the pattern 25 having a thickness less than 0.5mum and large aspect ratio can be obtained while employing an ordinary optical exposure technique.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5532181A JPS57170530A (en) | 1981-04-13 | 1981-04-13 | Manufacture of x-ray exposure mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5532181A JPS57170530A (en) | 1981-04-13 | 1981-04-13 | Manufacture of x-ray exposure mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57170530A true JPS57170530A (en) | 1982-10-20 |
| JPH0247848B2 JPH0247848B2 (en) | 1990-10-23 |
Family
ID=12995278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5532181A Granted JPS57170530A (en) | 1981-04-13 | 1981-04-13 | Manufacture of x-ray exposure mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57170530A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63155618A (en) * | 1986-12-19 | 1988-06-28 | Hitachi Ltd | Mask for x-ray exposure |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2739815B2 (en) * | 1993-12-27 | 1998-04-15 | 日本電気株式会社 | Network expansion unit |
-
1981
- 1981-04-13 JP JP5532181A patent/JPS57170530A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63155618A (en) * | 1986-12-19 | 1988-06-28 | Hitachi Ltd | Mask for x-ray exposure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0247848B2 (en) | 1990-10-23 |
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